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EP About this file: EP0500925

EP0500925 - NEW STRUCTURE AND METHOD FOR FABRICATING INDIUM PHOSPHIDE/INDIUM GALLIUM ARSENIDE PHOSPHIDE BURIED HETEROSTRUCTURE SEMICONDUCTOR LASERS [Right-click to bookmark this link]
Status	The application has been withdrawn Status updated on 19.05.1993 Database last updated on 05.10.2024
Most recent event Tooltip	19.05.1993	Withdrawal of application	published on 07.07.1993 [1993/27]
Applicant(s)	For all designated states GTE Laboratories Incorporated 1209 Orange Street Wilmington Delaware 19801 / US
	[N/P]
Former [1992/36]	For all designated states GTE LABORATORIES INCORPORATED 1209 Orange Street Wilmington Delaware 19801 / US
Inventor(s)	01 / HOLMSTROM, Roger, P. 20 Bayfield Road Wayland, MA 01778 / US
	02 / MELAND, Edmund Six Vincent Street Chelmsford, MA 01824 / US
	03 / POWAZINIK, William 27 Libby Avenue Marlborough, MA 01752 / US
	[1992/36]
Representative(s)	Bubb, Antony John Allen, et al Wilson Gunn Chancery House, Chancery Lane London WC2A 1QU / GB
	[N/P]
Former [1992/36]	Bubb, Antony John Allen, et al GEE & CO. Chancery House Chancery Lane London WC2A 1QU / GB
Application number, filing date	91918807.8	12.09.1991
	[1992/36]
	WO1991US06600
Priority number, date	US19900583409	14.09.1990 Original published format: US 583409
	[1992/36]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO9205576
	Date:	02.04.1992
	Language:	EN
	[1992/08]
	Type:	A1 Application with search report
	No.:	EP0500925
	Date:	02.09.1992
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 02.04.1992 takes the place of the publication of the European patent application.
	[1992/36]
Search report(s)	International search report - published on:	US	02.04.1992
	(Supplementary) European search report - dispatched on:	EP	06.05.1993
Classification	IPC:	H01L33/00, H01S3/19, H01L21/306	[1993/24]
	CPC:	H01S5/227 (EP,US); H01L21/30612 (EP,US); H01L21/30621 (EP,US); H01S5/06226 (EP,US); H01S5/2275 (EP,US); H01S5/2277 (EP,US); (+) H01S5/32391 (EP,US) (-)
	Former IPC [1992/36]	H01L21/20, H01L21/205, H01L21/208, H01L33/00, H01S3/19
Designated contracting states	DE, FR, GB, NL [1992/36]
Title	German:	NEUE STRUKTUR UND HERSTELLUNGSMETHODE FÜR IN INDIUMPHOSPHID/INDIUM-GALLIUM-ARSENID-PHOSPHID BEGRABENE HETEROSTRUKTURHALBLEITERLASER	[1992/36]
	English:	NEW STRUCTURE AND METHOD FOR FABRICATING INDIUM PHOSPHIDE/INDIUM GALLIUM ARSENIDE PHOSPHIDE BURIED HETEROSTRUCTURE SEMICONDUCTOR LASERS	[1992/36]
	French:	NOUVELLE STRUCTURE ET NOUVEAU PROCEDE POUR FABRIQUER DES LASERS A SEMI-CONDUCTEURS DONT L'HETEROSTRUCTURE EST NOYEE DANS DU PHOSPHURE D'INDIUM/PHOSPURE D'ARSENIURE IMDIUM GALLIUM	[1992/36]
File destroyed:	03.08.2001
Entry into regional phase	27.05.1992	National basic fee paid
	27.05.1992	Search fee paid
	27.05.1992	Designation fee(s) paid
	24.07.1992	Examination fee paid
Examination procedure	24.07.1992	Examination requested [1992/39]
	13.05.1993	Application withdrawn by applicant [1993/27]
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X] - ELECTRONICS LETTERS. vol. 24, no. 24, 24 November 1988, ENAGE GB pages 1483 - 1484 T. TANBUN-EK ET AL. 'High frequency buried heterostructure 1.5 um GaInAsP/InP lasersgrown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps'
		[XP] - PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, Cardiff, UK, 8-11 April 1991, IEEE, New York, USApages 130-133; R.P. HOLMSTROM et al.: "New fabrication method for high frequency InP/InGaAsP buried heterostructure semiconductor lasers."
	International search	[A]US4264381 (THOMPSON GEORGE H B, et al);
		[A]US4496403 (TURLEY STEPHEN E H [GB]);
		[A]US4644551 (KAWANO HIDOE [JP], et al);
		[A]US4662988 (RENNER DANIEL S O [GB]);
		[A]US4764246 (BRIDGES THOMAS J [US], et al);
		[Y]US4815083 (SUGOU SHIGEO [JP], et al);
		[A]US4818722 (HEINEN JOCHEN [DE]);
		[A]US4830986 (PLUMB RICHARD G S [GB]);
		[P]US4972238 (TANAKA AKIRA [JP]);
		[P]US4987576 (HEINEN JOCHEN [DE]);
		[P]US4990465 (LIAU ZONG-LONG [US], et al);
		[P]US5045499 (NISHIZAWA HIDEAKI [JP], et al);
		[A]JPS56111284 (NIPPON ELECTRIC CO);
		[A]JPS5743428 (NIPPON ELECTRIC CO);
		[A]JPS5992591 (NIPPON ELECTRIC CO);
		JPS59130492 [ ] (HITACHI LTD);
		[Y]JPS59155977 (HITACHI LTD);
		[A]JPS59227177 (HITACHI LTD);
		[A]JPS60251689 (NIPPON TELEGRAPH & TELEPHONE);
		[A]JPS6167980 (ANRITSU CORP);
		[A]JPH01114092 (HITACHI LTD)

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