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EP0495452
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EP About this file: EP0495452
| EP0495452 - Field effect transistor [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 26.07.1996 Database last updated on 22.05.2024 | Most recent event Tooltip | 26.07.1996 | Withdrawal of application | published on 11.09.1996 [1996/37] | Applicant(s) | For all designated states Sumitomo Electric Industries, Ltd. 5-33, Kitahama 4-chome, Chuo-ku Osaka 541 / JP | [1992/30] | Inventor(s) | 01 /
Nakajima, Shigeru, c/o Yokohama Works of Sumitomo Electric Industries, Ltd., 1, Taya-cho Sakae-ku, Yokohama-shi, Kanagawa / JP | [1992/30] | Representative(s) | Kahler, Kurt, et al Patentanwälte Kahler, Käck, Fiener Vorderer Anger 239 86899 Landsberg/Lech / DE | [N/P] |
| Former [1992/45] | Kahler, Kurt, Dipl.-Ing., et al Patentanwälte Kahler, Käck, Fiener & Sturm P.O. Box 12 49 D-87712 Mindelheim / DE | ||
| Former [1992/30] | Kahler, Kurt, Dipl.-Ing. Patentanwälte Kahler, Käck & Fiener Maximilianstrasse 57 Postfach 12 49 W-8948 Mindelheim / DE | Application number, filing date | 92100502.1 | 14.01.1992 | [1992/30] | Priority number, date | JP19910002789 | 14.01.1991 Original published format: JP 278991 | JP19910002790 | 14.01.1991 Original published format: JP 279091 | JP19910002791 | 14.01.1991 Original published format: JP 279191 | JP19910002792 | 14.01.1991 Original published format: JP 279291 | [1992/30] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0495452 | Date: | 22.07.1992 | Language: | EN | [1992/30] | Type: | A3 Search report | No.: | EP0495452 | Date: | 28.04.1993 | Language: | EN | [1993/17] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.03.1993 | Classification | IPC: | H01L29/76 | [1992/30] | CPC: |
H01L29/8128 (EP,US);
H01L29/812 (KR)
| Designated contracting states | DE, DK, FR, GB, IT [1992/30] | Title | German: | Feldeffekt-Transistor | [1992/30] | English: | Field effect transistor | [1992/30] | French: | Transistor à effet de champ | [1992/30] | File destroyed: | 20.04.2002 | Examination procedure | 28.10.1993 | Examination requested [1993/52] | 23.11.1994 | Despatch of a communication from the examining division (Time limit: M06) | 06.06.1995 | Reply to a communication from the examining division | 02.02.1996 | Despatch of a communication from the examining division (Time limit: M04) | 10.07.1996 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 17.07.1996 | Application withdrawn by applicant [1996/37] | Fees paid | Renewal fee | 28.01.1994 | Renewal fee patent year 03 | 31.01.1995 | Renewal fee patent year 04 | 31.01.1996 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP0214047 (FUJITSU LTD [JP]); | [E]US5091759 (SHIH HUNG-DAH [US], et al) | [X] - INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES vol. 10, no. 10, October 1989, NEW YORK US pages 1181 - 1191 A.R.JHA 'Parametric analysis of GaInAs devices for mm-wave applications' | [Y] - PROC. 11TH GAAS IC SYMPOSIUM, IEEE, SAN DIEGO, CA, US, 22-25 OCTOBER 1989 pages 129 - 132 Y.SUZUKI ET AL. 'A 10-Gbit/s laser driver IC with i-AlGaAs/n-GaAs doped-channel hetero-MISFETs (DMTs)' | [A] - IEEE ELECTRON DEVICE LETTERS. vol. 9, no. 11, November 1988, NEW YORK US pages 610 - 612 B.KIM ET AL. 'AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies' |