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EP0606580
European procedure
Extract from the Register of European Patents
EP About this file: EP0606580
| EP0606580 - Method for the formation of a silicon oxide film [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 08.11.1996 Database last updated on 03.09.2024 | Most recent event Tooltip | 08.11.1996 | No opposition filed within time limit | published on 27.12.1996 [1996/52] | Applicant(s) | For all designated states Dow Corning Toray Silicone Company, Limited Mitsui Bldg. No. 6, 2-3-16, Nihonbashi-Muromachi, Chuo-Ku Tokyo 103 / JP | [1994/29] | Inventor(s) | 01 /
Mine, Katsutoshi, c/o Dow Corning Toray Silicone Company, Ltd., 2-2, Chigusa Kaigan Ichihara-shi, Chiba Pref. / JP | 02 /
Nakamura, Takashi, c/o Dow Corning Toray Silicone Company, Ltd., 2-2, Chigusa Kaigan Ichihara-shi, Chiba Pref. / JP | 03 /
Sasaki, Motoshi, c/o Dow Corning Toray Silicone Company, Ltd., 2-2, Chigusa Kaigan Ichihara-shi, Chiba Pref. / JP | [1994/29] | Representative(s) | Sternagel, Hans-Günther, et al Sternagel, Fleischer, Godemeyer & Partner Patentanwälte Braunsberger Feld 29 51429 Bergisch Gladbach / DE | [N/P] |
| Former [1994/29] | Sternagel, Hans-Günther, Dr., et al Patentanwälte Dr. Michael Hann, Dr. H.-G. Sternagel, Dr. H. Dörries, Sander Aue 30 D-51465 Bergisch Gladbach / DE | Application number, filing date | 93119493.0 | 03.12.1993 | [1994/29] | Priority number, date | JP19920353405 | 11.12.1992 Original published format: JP 35340592 | [1994/29] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0606580 | Date: | 20.07.1994 | Language: | EN | [1994/29] | Type: | B1 Patent specification | No.: | EP0606580 | Date: | 03.01.1996 | Language: | EN | [1996/01] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.04.1994 | Classification | IPC: | C04B41/50, C23C18/12, H01L21/312, H01L21/316 | [1994/29] | CPC: |
C04B41/87 (EP,KR,US);
C03C17/25 (KR);
C03C17/23 (EP,US);
C03C17/30 (KR);
C04B41/009 (EP,US);
C04B41/5035 (EP,KR,US);
C23C18/1212 (EP,KR,US);
C23C18/122 (EP,KR,US);
C23C18/1275 (EP,US);
H01L21/02134 (EP,KR,US);
H01L21/02164 (EP,KR,US);
H01L21/02282 (EP,US);
H01L21/02337 (EP,US);
H01L21/316 (US);
C03C2217/213 (EP,KR,US);
C03C2218/32 (EP,US);
C04B2111/00844 (EP,US);
H01L21/02126 (EP);
H01L21/02216 (EP)
(-)
| C-Set: |
C04B41/009, C04B35/00 (US,EP);
C04B41/5035, C04B41/4519, C04B41/4554, C04B41/463 (EP,US) | Designated contracting states | DE, FR, GB, IT, NL [1994/29] | Title | German: | Verfahren zur Herstellung einer Siliciumdioxidschicht | [1994/29] | English: | Method for the formation of a silicon oxide film | [1994/29] | French: | Procédé pour la fabrication d'une couche d'oxyde de silicium | [1994/29] | Examination procedure | 29.09.1994 | Examination requested [1994/47] | 19.05.1995 | Despatch of communication of intention to grant (Approval: Yes) | 03.07.1995 | Communication of intention to grant the patent | 13.09.1995 | Fee for grant paid | 13.09.1995 | Fee for publishing/printing paid | Opposition(s) | 05.10.1996 | No opposition filed within time limit [1996/52] | Fees paid | Renewal fee | 01.09.1995 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [D]JPS4731838 (...); | [DA]US3615272 (COLLINS WARDE T, et al) [DA] 1-8 * the whole document *; | [A]EP0386969 (DOW CORNING [US]) [A] 1-8 * page 3, line 19 - line 27; claim - *; | [A]EP0427395 (DOW CORNING [US]) [A] 1-8 * the whole document *; | [PA]EP0560485 (DOW CORNING [US]) [PA] 1-8 * page 4, line 25 - line 41; claim - * | [A] - T.E. GENTLE, "Oxidation of hydrogen silsesquioxane, (HSiO3/2)n, by rapid thermal processing.", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, REDONDO BEACH US, (1992), vol. 1595, pages 146 - 164 [A] 1-7 * the whole document * | [A] - H. ADACHI ET AL, "NEW SPIN-ON GLASS MATERIALS CONTAINING POLYPHENYLSILSESQUIOXANE.", EXTENDED ABSTRACTS, PRINCETON, NEW JERSEY US, (19861024), vol. 86-2, page 858 [A] 1-8 | [A] - V. BELOT ET AL, "Thermal decomposition of hydrosilsesquioxane gels under argon.", EUROPEAN MATERIALS RESEARCH SOCIETY MONOGRAPHS, AMSTERDAM NL, (1992), vol. 5, pages 77 - 84 [A] 1-8 |