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Extract from the Register of European Patents

EP About this file: EP0573170

EP0573170 - Method of manufacture of high density EEPROM cell array [Right-click to bookmark this link]
Former [1993/49]High density EEPROM cell array with novel programming scheme and method of manufacture
[2002/49]
StatusNo opposition filed within time limit
Status updated on  22.10.2004
Database last updated on 24.04.2024
Most recent event   Tooltip28.12.2007Lapse of the patent in a contracting state
New state(s): IT
published on 30.01.2008  [2008/05]
Applicant(s)For all designated states
NATIONAL SEMICONDUCTOR CORPORATION
2900 Semiconductor Drive, P.O. Box 58090 Santa Clara
California 95052-8090 / US
[N/P]
Former [1993/49]For all designated states
NATIONAL SEMICONDUCTOR CORPORATION
2900 Semiconductor Drive, P.O. Box 58090
Santa Clara, California 95052-8090 / US
Inventor(s)01 / Bergemont, Albert
5512 Castle Glen Avenue
Santa Clara, California 95014 / US
[1993/49]
Representative(s)Bowles, Sharon Margaret, et al
BOWLES HORTON
Felden House
Dower Mews
High Street
Berkhamsted Hertfordshire HP4 2BL / GB
[N/P]
Former [1993/49]Bowles, Sharon Margaret, et al
BOWLES HORTON Felden House Dower Mews High Street
Berkhamsted Hertfordshire HP4 2BL / GB
Application number, filing date93303824.218.05.1993
[1993/49]
Priority number, dateUS1992089170501.06.1992         Original published format: US 891705
[1993/49]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0573170
Date:08.12.1993
Language:EN
[1993/49]
Type: B1 Patent specification 
No.:EP0573170
Date:17.12.2003
Language:EN
[2003/51]
Search report(s)(Supplementary) European search report - dispatched on:EP14.09.1993
ClassificationIPC:H01L27/115, H01L21/82, H01L29/788
[1993/49]
CPC:
G11C16/10 (EP,US); G11C16/14 (EP,KR,US); H01L29/7883 (EP,KR,US);
H10B41/30 (EP,US); H10B69/00 (EP,US); Y10S438/972 (EP,US)
Designated contracting statesBE,   CH,   DE,   FR,   GB,   IT,   LI,   NL [1993/49]
TitleGerman:Herstellungsverfahren einer EEPROM-Zellen-Matrix[2002/49]
English:Method of manufacture of high density EEPROM cell array[2002/49]
French:Procédé de fabrication d'un reseau de celles EEPROM[2002/49]
Former [1993/49]EEPROM-Zellen-Matrix von hoher Dichte mit neuem Programmierschema und Herstellungsverfahren
Former [1993/49]High density EEPROM cell array with novel programming scheme and method of manufacture
Former [1993/49]Réseau de cellules EEPROM à haute densité d'intégration présentant un schéma de programmation nouveau et procédé de fabrication
Examination procedure07.06.1994Examination requested  [1994/42]
21.03.1997Despatch of a communication from the examining division (Time limit: M06)
24.10.1997Reply to a communication from the examining division
25.09.1998Despatch of a communication from the examining division (Time limit: M06)
26.03.1999Reply to a communication from the examining division
14.02.2000Despatch of a communication from the examining division (Time limit: M04)
11.05.2000Reply to a communication from the examining division
01.06.2001Despatch of a communication from the examining division (Time limit: M06)
15.01.2002Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
18.01.2002Reply to a communication from the examining division
22.02.2002Despatch of a communication from the examining division (Time limit: M04)
24.04.2002Reply to a communication from the examining division
07.07.2003Communication of intention to grant the patent
17.10.2003Fee for grant paid
17.10.2003Fee for publishing/printing paid
Opposition(s)20.09.2004No opposition filed within time limit [2004/50]
Request for further processing for:18.01.2002Request for further processing filed
18.01.2002Full payment received (date of receipt of payment)
Request granted
14.02.2002Decision despatched
24.10.1997Request for further processing filed
24.10.1997Full payment received (date of receipt of payment)
Request granted
11.11.1997Decision despatched
Fees paidRenewal fee
11.05.1995Renewal fee patent year 03
06.05.1996Renewal fee patent year 04
07.05.1997Renewal fee patent year 05
22.04.1998Renewal fee patent year 06
03.05.1999Renewal fee patent year 07
04.05.2000Renewal fee patent year 08
04.05.2001Renewal fee patent year 09
21.05.2002Renewal fee patent year 10
26.05.2003Renewal fee patent year 11
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Lapses during opposition  TooltipBE17.12.2003
CH17.12.2003
FR17.12.2003
IT17.12.2003
LI17.12.2003
NL17.12.2003
[2008/05]
Former [2006/32]BE17.12.2003
CH17.12.2003
FR17.12.2003
LI17.12.2003
NL17.12.2003
Former [2004/52]BE17.12.2003
CH17.12.2003
LI17.12.2003
NL17.12.2003
Former [2004/33]CH17.12.2003
LI17.12.2003
NL17.12.2003
Documents cited:Search[A]JP57106079  ;
 [Y]US4258466  (KUO CHANG-KIANG, et al);
 [A]GB2073488  (HUGHES AIRCRAFT CO);
 [Y]WO9011621  (HUGHES AIRCRAFT CO [US])
 [A]  - PATENT ABSTRACTS OF JAPAN vol. 6, no. 194 (E-134)(1072) 2 October 1982 & JP-A-57 106 079 ( TOKYO SHIBAURA DENKI KABUSHIKI KAISHA ) 1 July 1982, & JP57106079 A 19820701
 [A]  - IEEE ELECTRON DEVICE LETTERS. vol. 12, no. 8, August 1991, NEW YORK US pages 450 - 451 EITAN BOAZ ET AL. 'Alternate Metal Virtual Ground (AMG)- A New Scaling Concept for Very High-Density EPROM's'
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.