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EP About this file: EP0585003

EP0585003 - Group III-V compound semiconductor device including a group IV element doped region [Right-click to bookmark this link]
Status	The application has been refused Status updated on 26.04.2002 Database last updated on 13.07.2024
Most recent event Tooltip	26.04.2002	Refusal of application	published on 12.06.2002 [2002/24]
Applicant(s)	For all designated states AT&T Corp. 32 Avenue of the Americas New York, NY 10013-2412 / US
	[1994/40]
Former [1994/09]	For all designated states AT&T Corp. 32 Avenue of the Americas New York, NY 10013-2412 / US
Inventor(s)	01 / Kopf, Rose Fasano 507a Wheatland Avenue Bound Brook, New Jersey 08805 / US
	02 / Schubert, Erdmann Frederick 70 Woodland Road New Providence, New Jersey 07974 / US
	[1994/09]
Representative(s)	Perkins, Sarah, et al Stevens Hewlett & Perkins 1 St Augustine's Place Bristol BS1 4UD / GB
	[N/P]
Former [2001/17]	Perkins, Sarah, et al Stevens, Hewlett & Perkins Halton House 20/23 Holborn London EC1N 2JD / GB
Former [1994/09]	Watts, Christopher Malcolm Kelway, Dr., et al AT&T (UK) Ltd. 5, Mornington Road Woodford Green Essex, IG8 0TU / GB
Application number, filing date	93306352.1	11.08.1993
	[1994/09]
Priority number, date	US19920934840	24.08.1992 Original published format: US 934840
	[1994/09]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0585003
	Date:	02.03.1994
	Language:	EN
	[1994/09]
	Type:	A3 Search report
	No.:	EP0585003
	Date:	31.01.1996
	[1996/05]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	14.12.1995
Classification	IPC:	H01L29/207, H01L29/36, H01L21/203, H01L29/861, C30B29/68	[2001/37]
	CPC:	H01L29/861 (EP,US); H01S5/30 (KR); H01L21/02392 (EP,US); H01L21/02461 (EP,US); H01L21/02463 (EP,US); H01L21/02507 (EP,US); (+) H01L21/02543 (EP,US); H01L21/02546 (EP,US); H01L21/02576 (EP,US); H01L21/02579 (EP,US); H01L21/02631 (EP,US); H01L29/155 (EP,US); H01L29/207 (EP,US) (-)
	Former IPC [1996/03]	H01L29/207, H01L29/36, H01L29/203, H01L21/203
	Former IPC [1994/09]	H01L29/207, H01L29/203, H01L21/203
Designated contracting states	DE, FR, GB [1994/09]
Title	German:	III-V Halbleiterbauelement mit einem mit Gruppe IV Element dotierten Bereich	[1994/09]
	English:	Group III-V compound semiconductor device including a group IV element doped region	[1994/09]
	French:	Composant semiconducteur du groupe III-V incluant une région dopée avec des éléments du groupe IV	[1994/09]
Examination procedure	22.07.1996	Examination requested [1996/39]
	15.03.2000	Despatch of a communication from the examining division (Time limit: M06)
	04.09.2000	Reply to a communication from the examining division
	30.07.2001	Despatch of communication of intention to grant (Approval: )
	14.01.2002	Despatch of communication that the application is refused, reason: formalities examination [2002/24]
	24.01.2002	Application refused, date of legal effect [2002/24]
Fees paid	Renewal fee
	11.08.1995	Renewal fee patent year 03
	19.08.1996	Renewal fee patent year 04
	13.08.1997	Renewal fee patent year 05
	25.08.1998	Renewal fee patent year 06
	17.08.1999	Renewal fee patent year 07
	14.08.2000	Renewal fee patent year 08
	22.06.2001	Renewal fee patent year 09
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XAY]EP0133342 (NEC CORP [JP]) [X] 1,2,15 * page 6, line 24 - page 9, line 26; figures 1,2 * * page 12, line 3 - line 14 * * page 12, line 20 - line 25 * * page 16, line 9 - line 20 * * page 29, line 1 - line 23; figure 17; claims 1-9 * * page 32, line 3 - line 9 * [A] 11-14 [Y] 5-10;
		[XA]US4675709 (SCIFRES DONALD R [US], et al) [X] 1,2,4,5,15 * column 1, line 9 - line 27 * * column 2, line 55 - line 68 * * column 5, line 4 - line 7 * * column 5, line 28 - line 30 * * column 6, line 41 - column 7, line 9; figure 6; claims 20,22-25 * [A] 7,9,10;
		[A]DE3828886 (MITSUBISHI ELECTRIC CORP [JP]) [A] 1-5,9,10,13-15 * column 5, line 2 - line 28 * * column 5, line 55 - column 6, line 39; figure 1 * * column 7, line 43 - line 57 * * column 11, line 6 - line 55; figure 6A; claims 1-4 *;
		[XY]EP0322773 (FUJITSU LTD [JP]) [X] 1 * column 12, line 28 - column 13, line 33; figures 15,16 * [Y] 5-10;
		[E]EP0565054 (HUGHES AIRCRAFT CO [US]) [E] 1,9,15 * column 3, line 8 - line 16 * * column 3, line 43 - column 4, line 53 * * column 5, line 55 - column 6, line 11; claims 12-15,18 * * column 7, line 2 - line 14 *;
		[PX] - SCHUBERT E F ET AL, "Selective n- and p-type C-doping in Ga/sub 0.47/In/sub 0.53/As superlattices", MOLECULAR BEAM EPITAXY 1992. SEVENTH INTERNATIONAL CONFERENCE, SCHWABISCH GMUND, GERMANY, 24-28 AUG. 1992, ISSN 0022-0248, JOURNAL OF CRYSTAL GROWTH, FEB. 1993, NETHERLANDS, vol. 127, no. 1-4, pages 1037 - 1040 [PX] 1-12,15 * the whole document *
		[A] - BROCKERHOFF W ET AL, "D.C.- AND R.F.-CHARACTERISATION OF CONVENTIONAL AND SUPERLATTICE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT LOW TEMPERATURES", SOLID STATE ELECTRONICS, (19901101), vol. 33, no. 11, pages 1393 - 1400, XP000161632 [A] 1,5,7,9,15 * page 1393, column R, paragraph 2 - page 1394, column L; figure 1 * DOI: http://dx.doi.org/10.1016/0038-1101(90)90114-T
		[A] - HIROSHI ITO ET AL, "CARBON INCORPORATION IN (ALGA)AS, (ALIN)AS AND (GAIN)AS TERNARY ALLOYS GROWN BY MOLECULAR BEAM EPITAXY", JAPANESE JOURNAL OF APPLIED PHYSICS, (19910601), vol. 30, no. 6A PART 02, pages L944 - L947, XP000236690 [A] 1,6,8,11,15 * page L944; figure 1 * * page L946; figure 5 * DOI: http://dx.doi.org/10.1143/JJAP.30.L944

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