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EP0594442
European procedure
Extract from the Register of European Patents
EP About this file: EP0594442
| EP0594442 - Schottky junction device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 30.03.2001 Database last updated on 24.08.2024 | Most recent event Tooltip | 30.03.2001 | No opposition filed within time limit | published on 16.05.2001 [2001/20] | Applicant(s) | For all designated states THE FURUKAWA ELECTRIC CO., LTD. 6-1, Marunouchi 2-chome Chiyoda-ku Tokyo 100 / JP | [N/P] |
| Former [1994/17] | For all designated states THE FURUKAWA ELECTRIC CO., LTD. 6-1, Marunouchi 2-chome Chiyoda-ku Tokyo 100 / JP | Inventor(s) | 01 /
Shimizu, Hitoshi No. 202, Furukawa Dormitory, Ookuchinakamachi 211 Kanagawa-ku, Yokohama-shi / JP | 02 /
Hirayama Yoshiyuki No. 2-24 Furukawa Denkou Shataku, Mitsusawa Nishimachi 1-2, Kanagawa-ku Yokohama-shi / JP | 03 /
Irikawa, Michinori No. 6-3-2 2, Namiki 2-chome, Kanagawa-ku Yokohama-shi / JP | [1994/17] | Representative(s) | Gibson, Stewart Harry Urquhart-Dykes & Lord LLP Churchill House Churchill Way Cardiff CF10 2HH / GB | [N/P] |
| Former [1994/17] | Gibson, Stewart Harry URQUHART-DYKES & LORD, Three Trinity Court, 21-27 Newport Road Cardiff CF2 1AA / GB | Application number, filing date | 93308406.3 | 21.10.1993 | [1994/17] | Priority number, date | JP19920308189 | 22.10.1992 Original published format: JP 30818992 | [1994/17] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0594442 | Date: | 27.04.1994 | Language: | EN | [1994/17] | Type: | A3 Search report | No.: | EP0594442 | Date: | 15.03.1995 | Language: | EN | [1995/11] | Type: | B1 Patent specification | No.: | EP0594442 | Date: | 31.05.2000 | Language: | EN | [2000/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.01.1995 | Classification | IPC: | H01L29/872, H01L29/15 | [1999/22] | CPC: |
B82Y20/00 (EP,US);
H01L29/475 (EP,US);
H01L29/872 (EP,US);
H01L31/035236 (EP,US);
H01L31/108 (EP,US)
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| Former IPC [1995/09] | H01L29/40, H01L29/91, H01L29/14, H01L31/0352 | ||
| Former IPC [1994/17] | H01L29/40, H01L29/205, H01L29/91 | Designated contracting states | DE, FR, NL [1994/17] | Title | German: | Schottky-Übergang Anordnung | [1994/17] | English: | Schottky junction device | [1994/17] | French: | Dispositif à junction Schottky | [1994/17] | Examination procedure | 16.08.1995 | Examination requested [1995/41] | 26.11.1996 | Despatch of a communication from the examining division (Time limit: M06) | 23.05.1997 | Reply to a communication from the examining division | 11.12.1997 | Despatch of a communication from the examining division (Time limit: M04) | 30.03.1998 | Reply to a communication from the examining division | 14.05.1999 | Despatch of communication of intention to grant (Approval: Yes) | 17.09.1999 | Communication of intention to grant the patent | 07.12.1999 | Fee for grant paid | 07.12.1999 | Fee for publishing/printing paid | Opposition(s) | 01.03.2001 | No opposition filed within time limit [2001/20] | Fees paid | Renewal fee | 10.10.1995 | Renewal fee patent year 03 | 09.10.1996 | Renewal fee patent year 04 | 10.10.1997 | Renewal fee patent year 05 | 12.10.1998 | Renewal fee patent year 06 | 14.10.1999 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPS5984589 ; | [A]EP0440910 (HITACHI LTD [JP], et al) [A] 1* the whole document *; | [A]EP0506127 (NEC CORP [JP]) [A] 1,5-7 * the whole document * | [A] - PATENT ABSTRACTS OF JAPAN, (19840911), vol. 8, no. 198, Database accession no. (E - 265), & JP59084589 A 19840516 (FUJITSU KK) [A] 2-4 * abstract * | [A] - K. C. HWANG ET AL, "A Novel High-Speed Broad Wavelength InAlAs/InGaAs Schottky Barrier Photodiode for 0.4 to 1.6 um Detection", SECOND INTERNATIONAL CONFERENCE. INDIUM PHOSPHIDE AND RELATED MATERIALS. APRIL 23-25, 1990, RADISSON HOTEL DENVER DENVER, COLORADO, pages 372 - 378 [A] 1 | [A] - F. CAPASSO ET AL, "NEW PSEUDO-QUATERNARY GaInAsP SEMICONDUCTORS: A HIGH SPEED "HIGH-LOW" AVALANCHE PHOTODIODE WITH Ga0.47In0.53As/InP GRADED GAP SUPERLATTICE", INTERNATIONAL ELECTRON DEVICES MEETING. TECHNICAL DIGEST, SAN FRANCISCO, CA, USA, 9-12 DEC. 1984, (1984), pages 723 - 726 [A] 1 * the whole document * | [A] - YOSHIAKI NAKATA ET AL, "CHARACTERIZATION OF GaAsSb/InAlAs QUANTUM-WELL STRUCTURES LATTICE-MATCHED TO InP GROWN BY MOLECULAR BEAM EPITAXY", JOURNAL OF CRYSTAL GROWTH, AMSTERDAM NL, (199001), vol. 99, no. 1/4, pages 311 - 314 [A] 1 * abstract * |