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EP About this file: EP0591086

EP0591086 - Low temperature chemical vapor deposition and method for depositing a tungsten silicide film with improved uniformity and reduced fluorine concentration [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 19.06.1998 Database last updated on 15.06.2024
Most recent event Tooltip	19.06.1998	Application deemed to be withdrawn	published on 05.08.1998 [1998/32]
Applicant(s)	For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US
	[N/P]
Former [1994/14]	For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US
Inventor(s)	01 / Gow, Thomas Richard 4 Lyman Drive Williston, VT 05495 / US
	02 / Lebel, Richard John Box 2255A RD1 Sheldon, VT 05483 / US
	[1994/14]
Representative(s)	Klein, Daniel Jacques Henri Compagnie IBM France Département de Propriété Intellectuelle 06610 La Gaude / FR
	[N/P]
Former [1994/14]	Klein, Daniel Jacques Henri Compagnie IBM France Département de Propriété Intellectuelle F-06610 La Gaude / FR
Application number, filing date	93480132.5	10.09.1993
	[1994/14]
Priority number, date	US19920954783	30.09.1992 Original published format: US 954783
	[1994/14]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0591086
	Date:	06.04.1994
	Language:	EN
	[1994/14]
	Type:	A3 Search report
	No.:	EP0591086
	Date:	21.09.1994
	Language:	EN
	[1994/38]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	08.08.1994
Classification	IPC:	H01L21/285, H01L21/3205, C23C16/44, C23C16/42	[1994/35]
	CPC:	C23C16/42 (EP); C23C16/0272 (EP); H01L21/28061 (EP); H01L21/28556 (EP)
	Former IPC [1994/14]	H01L21/3205, C23C16/44, C23C16/42, H01L21/285
Designated contracting states	DE, FR, GB [1994/14]
Title	German:	Niedrigtemperatur-CVD-Verfahren, zur Abscheidung einer Wolframsilizid-Schicht mit einer verbesserten Uniformität und einer reduzierten Fluorin-Konzentration	[1994/14]
	English:	Low temperature chemical vapor deposition and method for depositing a tungsten silicide film with improved uniformity and reduced fluorine concentration	[1994/14]
	French:	Méthode CVD à basse température, pour déposer un film de siliciure de tungstène présentant une uniformité améliorée et une concentration réduite en fluorine	[1994/14]
Examination procedure	18.07.1994	Examination requested [1994/37]
	29.09.1997	Despatch of a communication from the examining division (Time limit: M04)
	10.02.1998	Application deemed to be withdrawn, date of legal effect [1998/32]
	11.03.1998	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1998/32]
Fees paid	Renewal fee
	07.09.1995	Renewal fee patent year 03
	21.09.1996	Renewal fee patent year 04
	19.09.1997	Renewal fee patent year 05
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XY]EP0254651 (NIHON SHINKU GIJUTSU K.K.) [X] 1,2,4,5,8,9,11,12,15,16,18,19,22 * column 1, line 62 - column 2, line 9 * * column 4, line 34 - line 51; figure 8 * * column 9, line 33 - column 10, line 2 * * claims 1,4-6,11,12,26,27 * [Y] 3,6,7,10,13,14,17,20,21,24;
		[XAY]EP0254654 (NIHON SHINKU GIJUTSU K.K.) [X] 1,8,15,22 * column 1, line 62 - column 2, line 12 * * column 2, line 35 - column 3, line 6 * * column 3, line 63 - column 4, line 9; figure 1 * * column 5, line 54 - column 6, line 25; figures 5,6 * * column 6, line 61 - line 65; figure 12; claims 1-3 * [A] 2-5,9-12,16-19 [Y] 6,7,13,14,20,21;
		[XA]JPH0266173 ;
		[X]JPS61183199 ;
		[A]JPH01191447 ;
		[A]US4966869 (JOSEPH T. HILLMAN) [A] 22,24 * column 2, line 15 - line 24 * * column 2, line 54 - line 60 *;
		[PA]KR930006720B
		[YA] - T. HARA ET AL., "Film nucleation uniformity of tungsten silicide deposited using dichlorosilane reduction", EXTENDED ABSTRACTS OF THE FALL MEETING, HOLLYWOOD, FL., US., PRINCETON, NEW JERSEY US, (1989), vol. 89/2, pages 543 - 544, XP000276984 [Y] 3,10,17 * page 543, column L * [A] 1,8,14,15,21,22
		[Y] - TOHRU HARA ET AL., "Composition of CVD tungsten silicides", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (198705), vol. 134, no. 5, pages 1302 - 1306 [Y] 24 * page 1302, column L; figure 7 *
		[XA] - PATENT ABSTRACTS OF JAPAN, (19900525), vol. 14, no. 246, Database accession no. (C - 722), & JP02066173 A 19900306 (ANELVA CORP.) [X] 1,8,22 * abstract * [A] 3,10,25,27-30
		[X] - PATENT ABSTRACTS OF JAPAN, (19870107), vol. 11, no. 3, Database accession no. (C - 395), & JP61183199 A 19860815 (FUJITSU LTD.) [X] 1 * abstract *
		[A] - PATENT ABSTRACTS OF JAPAN, (19891102), vol. 13, no. 483, Database accession no. (E - 839), & JP01191447 A 19890801 (FUJITSU LTD.) [A] 1,15,22,25 * abstract *
		[PA] - DATABASE WPI, 0, Derwent World Patents Index, vol. 94, no. 08, Database accession no. 94-062746, & KR930006720B B1 19930723 (HYUNDAI ELECTRONIC IND. CO.) [PA] 1,8,22 * abstract *

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