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EP0622806
European procedure
Extract from the Register of European Patents
EP About this file: EP0622806
| EP0622806 - Nonvolatile semiconductor memory device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 22.10.1999 Database last updated on 15.06.2024 | Most recent event Tooltip | 22.10.1999 | No opposition filed within time limit | published on 08.12.1999 [1999/49] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1998/51] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 / JP | ||
| Former [1994/44] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Ohtsuka, Nobuaki, Intell.Property Division K.K. Toshiba, 1-1 Shibaura 1-chome Minato-ku, Tokyo 105 / JP | 02 /
Miyamoto, Junichi, Intell.Property Division K.K. Toshiba, 1-1 Shibaura 1-chome Minato-ku, Tokyo 105 / JP | [1994/44] | Representative(s) | Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Arabellastrasse 4 81925 München / DE | [N/P] |
| Former [1994/44] | Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Arabellastrasse 4 D-81925 München / DE | Application number, filing date | 94104501.5 | 22.03.1994 | [1994/44] | Priority number, date | JP19930104406 | 30.04.1993 Original published format: JP 10440693 | [1994/44] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0622806 | Date: | 02.11.1994 | Language: | EN | [1994/44] | Type: | A3 Search report | No.: | EP0622806 | Date: | 18.10.1995 | Language: | EN | [1995/42] | Type: | B1 Patent specification | No.: | EP0622806 | Date: | 16.12.1998 | Language: | EN | [1998/51] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.08.1995 | Classification | IPC: | G11C16/06, G11C8/00 | [1994/44] | CPC: |
G11C16/08 (EP,US);
G11C16/16 (EP,US)
| Designated contracting states | FR [1998/46] |
| Former [1994/44] | DE, FR, GB | Title | German: | Nichtflüchtige Halbleiterspeicheranordnung | [1998/18] | English: | Nonvolatile semiconductor memory device | [1994/44] | French: | Dispositif de mémoire non-volatile à semi-conducteur | [1994/44] |
| Former [1994/44] | Nichtflüchtige halbleiterspeicheranordnung | Examination procedure | 22.03.1994 | Examination requested [1994/44] | 23.03.1998 | Despatch of communication of intention to grant (Approval: Yes) | 18.06.1998 | Communication of intention to grant the patent | 17.09.1998 | Fee for grant paid | 17.09.1998 | Fee for publishing/printing paid | Opposition(s) | 17.09.1999 | No opposition filed within time limit [1999/49] | Fees paid | Renewal fee | 08.03.1996 | Renewal fee patent year 03 | 12.03.1997 | Renewal fee patent year 04 | 10.03.1998 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0182198 (EXEL MICROELECTRONICS INC [US]) [A] 1,3-7 * page 20, line 6 - page 23, line 9; figures 5B,5D *; | [A]WO9205560 (TOSHIBA KK [JP]) [A] 1,2,5-7; | EP0550751 [ ] (TOSHIBA KK [JP]) [ ] * page 7, line 23 - line 58; figure 3; table 3 * * page 9, line 42 - page 11, line 48; figures 11-13,16; table 4 * * page 16, line 5 - line 12; figure 28 *; | [A]US5199001 (TZENG JYH-CHERNG J [US]) [A] 1,2,6 * column 2, line 40 - column 3, line 41; figure 3 * |