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EP0624907
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EP About this file: EP0624907
| EP0624907 - Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor [Right-click to bookmark this link] | Status | The application has been refused Status updated on 15.10.1999 Database last updated on 29.07.2024 | Most recent event Tooltip | 29.08.2008 | Change - representative | published on 01.10.2008 [2008/40] | Applicant(s) | For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 / JP | [N/P] |
| Former [1994/46] | For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 / JP | Inventor(s) | 01 /
Izumi, Shigekazu, c/o Mitsubishi Denki K.K. Hikari Microha Device Kenkyusho, 1 Mizuhara 4-chome, Itami-shi, Hyogo 664 / JP | [1994/46] | Representative(s) | Winter, Brandl - Partnerschaft mbB Alois-Steinecker-Straße 22 85354 Freising / DE | [N/P] |
| Former [2008/40] | Winter, Brandl, Fürniss, Hübner Röss, Kaiser, Polte Partnerschaft Patent- und Rechtsanwaltskanzlei Alois-Steinecker-Strasse 22 85354 Freising / DE | ||
| Former [1994/46] | KUHNEN, WACKER & PARTNER Alois-Steinecker-Strasse 22 D-85354 Freising / DE | Application number, filing date | 94106749.8 | 29.04.1994 | [1994/46] | Priority number, date | JP19930107917 | 10.05.1993 Original published format: JP 10791793 | [1994/46] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0624907 | Date: | 17.11.1994 | Language: | EN | [1994/46] | Type: | A3 Search report | No.: | EP0624907 | Date: | 03.05.1995 | Language: | EN | [1995/18] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 21.03.1995 | Classification | IPC: | H01L29/15, H01L29/737, H01L29/778 | [1999/05] | CPC: |
H01L29/155 (EP,US);
H01L29/7371 (EP,US);
H01L29/7787 (EP,US)
|
| Former IPC [1994/46] | H01L29/205, H01L29/73, H01L29/812 | Designated contracting states | DE, FR, GB [1994/46] | Title | German: | Halbleiteranordnung Heteroübergang-Bipolartransistor und Transistor mit hoher Elektronergeschwindigkeit | [1994/46] | English: | Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor | [1994/46] | French: | Dispositif semi-conducteur, transistor bipolaire à hétérojonction et transistor à haute mobilité électronique | [1994/46] | Examination procedure | 04.05.1995 | Examination requested [1995/26] | 06.12.1996 | Despatch of a communication from the examining division (Time limit: M04) | 11.04.1997 | Reply to a communication from the examining division | 20.05.1998 | Despatch of a communication from the examining division (Time limit: M04) | 07.09.1998 | Reply to a communication from the examining division | 21.01.1999 | Despatch of communication of intention to grant (Approval: ) | 05.07.1999 | Despatch of communication that the application is refused, reason: formalities examination [1999/48] | 15.07.1999 | Application refused, date of legal effect [1999/48] | Fees paid | Renewal fee | 25.04.1996 | Renewal fee patent year 03 | 29.04.1997 | Renewal fee patent year 04 | 24.04.1998 | Renewal fee patent year 05 | Penalty fee | Additional fee for renewal fee | 30.04.1999 | 06 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [DA]JPH0472740 ; | [DA]JPS63156356 ; | [PX]US5283444 (SACKS ROBERT N [US], et al) [PX] 1 * column W * | [XA] - J. KRAUS ET AL., "InyGa1-yAs/GaAs interface smoothing by GaAs monolayers in highly strained graded superlattices channels (0.2 DOI: http://dx.doi.org/10.1016/0022-0248(93)90689-T | [DA] - PATENT ABSTRACTS OF JAPAN, (19920624), vol. 16, no. 285, Database accession no. (E - 1222), & JP04072740 A 19920306 (NEC CORP) [DA] 1,3 * abstract * | [DA] - PATENT ABSTRACTS OF JAPAN, (19881108), vol. 12, no. 420, Database accession no. (E - 679), & JP63156356 A 19880629 (FUJITSU LTD) [DA] 1,4 * abstract * | [PX] - H.M. SHIEH ET AL., "A new delta-doped InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a strained superlattice spacer", SOLID STATE ELECTRONICS, OXFORD GB, (199308), vol. 36, no. 8, pages 1117 - 1119 [PX] 1,5 * the whole document * |