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Extract from the Register of European Patents

EP About this file: EP0624901

EP0624901 - Semiconductor device with a passivation layer [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  15.01.1999
Database last updated on 20.07.2024
Most recent event   Tooltip15.01.1999Refusal of applicationpublished on 03.03.1999 [1999/09]
Applicant(s)For all designated states
eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG
Max-Planck-Strasse 5
59581 Warstein / DE
For all designated states
SIEMENS AKTIENGESELLSCHAFT
Werner-von-Siemens-Str. 1
DE-80333 München / DE
[N/P]
Former [1994/46]For all designated states
EUPEC Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG
Max-Planck-Strasse 5
D-59581 Warstein / DE
For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
D-80333 München / DE
Inventor(s)01 / Hammerschmidt, Albert, Dr. Dipl.-Chem.
Coburger Strasse 47a
D-91056 Erlangen / DE
02 / Schmidt, Gerhard, Dr. Dipl.-Phys.
Poigerstrasse 3A
D-91301 Forchheim / DE
03 / Schulte, Rolf
Georg Krauss Strasse 2
D-91056 Erlangen / DE
[1994/46]
Representative(s)Epping, Wilhelm, et al
Patentanwalt
Postfach 22 13 17
80503 München / DE
[N/P]
Former [1998/29]Epping, Wilhelm, Dr.-Ing., et al
Patentanwalt Postfach 22 13 17
80503 München / DE
Former [1998/25]Epping, Wilhelm, Dr.-Ing., et al
Untertaxetweg 146
82131 Gauting / DE
Former [1994/46]Fuchs, Franz-Josef, Dr.-Ing., et al
Postfach 22 13 17
D-80503 München / DE
Application number, filing date94106981.704.05.1994
[1994/46]
Priority number, dateDE1993431612113.05.1993         Original published format: DE 4316121
[1994/46]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP0624901
Date:17.11.1994
Language:DE
[1994/46]
Search report(s)(Supplementary) European search report - dispatched on:EP23.09.1994
ClassificationIPC:H01L23/29, C23C16/26
[1994/46]
CPC:
C23C16/26 (EP,US); H01L23/29 (EP,US); H01L23/3171 (EP,US);
H01L2924/0002 (EP,US)
C-Set:
H01L2924/0002, H01L2924/00 (EP,US)
Designated contracting statesCH,   DE,   GB,   LI [1994/46]
TitleGerman:Halbleiterbauelement mit Passivierungsschicht[1994/46]
English:Semiconductor device with a passivation layer[1994/46]
French:Dispositif semi-conducteur comprenant une couche de passivation[1994/46]
Examination procedure05.12.1994Examination requested  [1995/05]
16.04.1996Despatch of a communication from the examining division (Time limit: M06)
17.10.1996Reply to a communication from the examining division
14.01.1997Despatch of a communication from the examining division (Time limit: M06)
22.08.1997Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
15.10.1997Reply to a communication from the examining division
30.09.1998Despatch of communication that the application is refused, reason: substantive examination [1999/09]
10.10.1998Application refused, date of legal effect [1999/09]
Request for further processing for:15.10.1997Request for further processing filed
15.10.1997Full payment received (date of receipt of payment)
Request granted
03.11.1997Decision despatched
Fees paidRenewal fee
20.05.1996Renewal fee patent year 03
20.05.1997Renewal fee patent year 04
19.05.1998Renewal fee patent year 05
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Documents cited:Search[A]JPS6223050  ;
 [A]EP0381111  (SIEMENS AG [DE]) [A] 1-11* column 1, line 52 - column 4, line 36 *;
 [A]  - DATABASE WPI, 0, Derwent World Patents Index, vol. 87, no. 10, Database accession no. 87-069228, & JPS6223050 A 19870131 (TORAY IND INC) [A] 1-11 * abstract *
 [A]  - KENJI NODA ET AL., "Characteristics and boron doping effect of hydrogenated amorphous carbon films", JOURNAL OF APPLIED PHYSICS, NEW YORK US, (198608), vol. 60, no. 4, pages 1540 - 1542, XP001305473 [A] 1-11 * the whole document *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.