EP0624901 - Semiconductor device with a passivation layer [Right-click to bookmark this link] | Status | The application has been refused Status updated on 15.01.1999 Database last updated on 20.07.2024 | Most recent event Tooltip | 15.01.1999 | Refusal of application | published on 03.03.1999 [1999/09] | Applicant(s) | For all designated states eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Max-Planck-Strasse 5 59581 Warstein / DE | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
Former [1994/46] | For all designated states EUPEC Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Max-Planck-Strasse 5 D-59581 Warstein / DE | ||
For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Hammerschmidt, Albert, Dr. Dipl.-Chem. Coburger Strasse 47a D-91056 Erlangen / DE | 02 /
Schmidt, Gerhard, Dr. Dipl.-Phys. Poigerstrasse 3A D-91301 Forchheim / DE | 03 /
Schulte, Rolf Georg Krauss Strasse 2 D-91056 Erlangen / DE | [1994/46] | Representative(s) | Epping, Wilhelm, et al Patentanwalt Postfach 22 13 17 80503 München / DE | [N/P] |
Former [1998/29] | Epping, Wilhelm, Dr.-Ing., et al Patentanwalt Postfach 22 13 17 80503 München / DE | ||
Former [1998/25] | Epping, Wilhelm, Dr.-Ing., et al Untertaxetweg 146 82131 Gauting / DE | ||
Former [1994/46] | Fuchs, Franz-Josef, Dr.-Ing., et al Postfach 22 13 17 D-80503 München / DE | Application number, filing date | 94106981.7 | 04.05.1994 | [1994/46] | Priority number, date | DE19934316121 | 13.05.1993 Original published format: DE 4316121 | [1994/46] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0624901 | Date: | 17.11.1994 | Language: | DE | [1994/46] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.09.1994 | Classification | IPC: | H01L23/29, C23C16/26 | [1994/46] | CPC: |
C23C16/26 (EP,US);
H01L23/29 (EP,US);
H01L23/3171 (EP,US);
H01L2924/0002 (EP,US)
| C-Set: |
H01L2924/0002, H01L2924/00 (EP,US)
| Designated contracting states | CH, DE, GB, LI [1994/46] | Title | German: | Halbleiterbauelement mit Passivierungsschicht | [1994/46] | English: | Semiconductor device with a passivation layer | [1994/46] | French: | Dispositif semi-conducteur comprenant une couche de passivation | [1994/46] | Examination procedure | 05.12.1994 | Examination requested [1995/05] | 16.04.1996 | Despatch of a communication from the examining division (Time limit: M06) | 17.10.1996 | Reply to a communication from the examining division | 14.01.1997 | Despatch of a communication from the examining division (Time limit: M06) | 22.08.1997 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 15.10.1997 | Reply to a communication from the examining division | 30.09.1998 | Despatch of communication that the application is refused, reason: substantive examination [1999/09] | 10.10.1998 | Application refused, date of legal effect [1999/09] | Request for further processing for: | 15.10.1997 | Request for further processing filed | 15.10.1997 | Full payment received (date of receipt of payment) Request granted | 03.11.1997 | Decision despatched | Fees paid | Renewal fee | 20.05.1996 | Renewal fee patent year 03 | 20.05.1997 | Renewal fee patent year 04 | 19.05.1998 | Renewal fee patent year 05 |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPS6223050 ; | [A]EP0381111 (SIEMENS AG [DE]) [A] 1-11* column 1, line 52 - column 4, line 36 *; | [A] - DATABASE WPI, 0, Derwent World Patents Index, vol. 87, no. 10, Database accession no. 87-069228, & JPS6223050 A 19870131 (TORAY IND INC) [A] 1-11 * abstract * | [A] - KENJI NODA ET AL., "Characteristics and boron doping effect of hydrogenated amorphous carbon films", JOURNAL OF APPLIED PHYSICS, NEW YORK US, (198608), vol. 60, no. 4, pages 1540 - 1542, XP001305473 [A] 1-11 * the whole document * |