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EP0628994
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EP About this file: EP0628994
| EP0628994 - Heat treatment method for semiconductor substrate [Right-click to bookmark this link] | Status | The application has been refused Status updated on 31.08.2001 Database last updated on 28.05.2024 | Most recent event Tooltip | 31.08.2001 | Refusal of application | published on 17.10.2001 [2001/42] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | For all designated states TOSHIBA MICRO-ELECTRONICS CORPORATION 25-1, Ekimae-hon-cho Kawasaki-ku, Kawasaki-shi Kanagawa-ken / JP | [N/P] |
| Former [1995/34] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | ||
| For all designated states TOSHIBA MICRO-ELECTRONICS CORPORATION 25-1, Ekimae-hon-cho Kawasaki-ku, Kawasaki-shi, Kanagawa-ken / JP | |||
| Former [1994/50] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho Saiwai-ku Kawasaki-shi Kanagawa-ken Tokyo / JP | ||
| For all designated states TOSHIBA MICRO-ELECTRONICS CORPORATION 25-1, Ekimae-hon-cho Kawasaki-ku, Kawasaki-shi, Kanagawa-ken / JP | Inventor(s) | 01 /
Samata, Shuichi 615-1-161, Noba-cho, Konan-ku Yokohama-shi, Kanagawa-ken / JP | 02 /
Fukui, Hiroyuki 702, Paredoru Minaharu, 622-1, Ooaza Minaharu Ooita-shi, Ooita-ken / JP | 03 /
Inoue, Yoko, Intellectual Property Div. K.K. Toshiba, 580-1, Horikawa-Cho, Sawai-Ku Kawasaki-Shi, Kanagawa-Ken / JP | [1998/26] |
| Former [1994/50] | 01 /
Samata, Shuichi 615-1-161, Noba-cho, Konan-ku Yokohama-shi, Kanagawa-ken / JP | ||
| 02 /
Fukui, Hiroyuki 702, Paredoru Minaharu, 622-1, Ooaza Minaharu Ooita-shi, Ooita-ken / JP | |||
| 03 /
Inoue, Yoko 1-7-29-509, Wada, Hodogaya-ku Yokohama-shi, Kanagawa-ken / JP | Representative(s) | Hansen, Bernd, et al Hoffmann Eitle Patent- und Rechtsanwälte Arabellastrasse 4 81925 München / DE | [N/P] |
| Former [1994/50] | Hansen, Bernd, Dr. Dipl.-Chem., et al Hoffmann, Eitle & Partner, Patentanwälte, Arabellastrasse 4 D-81925 München / DE | Application number, filing date | 94108961.7 | 10.06.1994 | [1994/50] | Priority number, date | JP19930138536 | 10.06.1993 Original published format: JP 13853693 | [1994/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0628994 | Date: | 14.12.1994 | Language: | EN | [1994/50] | Type: | A3 Search report | No.: | EP0628994 | Date: | 08.05.1996 | [1996/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.03.1996 | Classification | IPC: | H01L21/316, H01L21/306 | [1996/19] | CPC: |
H01L21/28185 (EP);
H01L21/3225 (EP);
H01L21/324 (KR);
H01L21/67109 (EP)
|
| Former IPC [1994/50] | H01L21/316 | Designated contracting states | DE, FR, GB [1994/50] | Title | German: | Wärmebehandlungsmethode für Halbleiterscheiben | [1994/50] | English: | Heat treatment method for semiconductor substrate | [1994/50] | French: | Procédé de traitement thermique pour substrats semi-conducteurs | [1994/50] | Miscellaneous | EPB 1997/42: Teilanmeldung 97112237.9 eingereicht am 17/07/97 | EPB 1997/42: Divisional application 97112237.9 filed on 17/07/97 | EPB 1997/42: Demande divisionnaire 97112237.9 déposée le 17/07/97 | Examination procedure | 10.06.1994 | Examination requested [1994/50] | 13.03.1997 | Despatch of a communication from the examining division (Time limit: M04) | 17.07.1997 | Reply to a communication from the examining division | 01.04.1998 | Despatch of a communication from the examining division (Time limit: M04) | 29.07.1998 | Reply to a communication from the examining division | 23.11.2000 | Despatch of communication of intention to grant (Approval: ) | 17.05.2001 | Despatch of communication that the application is refused, reason: formalities examination [2001/42] | 27.05.2001 | Application refused, date of legal effect [2001/42] | Divisional application(s) | EP97112237.9 / EP0807966 | Fees paid | Renewal fee | 10.06.1996 | Renewal fee patent year 03 | 10.06.1997 | Renewal fee patent year 04 | 15.06.1998 | Renewal fee patent year 05 | 14.06.1999 | Renewal fee patent year 06 | 13.06.2000 | Renewal fee patent year 07 | Penalty fee | Additional fee for renewal fee | 30.06.2001 | 08 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP0316835 (OKI ELECTRIC IND CO LTD [JP]) [X] 4,5,8-10 * column W *; | [X]US3855024 (LIM M) [X] 9,10 * the whole document *; | [PA]US5264396 (THAKUR RANDHIR P S [US], et al) [PA] 1-10 * column W *; | [A]US4149905 (LEVINSTEIN HYMAN J, et al) [A] 1 * the whole document *; | [A] - A.ISHIZAKA ET AL., "Low Temperature Surface Cleaning of Silicon and its Application to Silicon MBE", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, vol. 133, no. 4, pages 666 - 671 [A] 1 * page 667, column L, paragraph L * | [A] - YASUO KUNII ET AL., "Si Surface Cleaning by Si2H6-H2 Gas Etching and its Effects on Solid-Pase Epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS, TOKYO JP, vol. 26, no. 11, pages 1816 - 1822, XP002040473 [A] 4 * page 1816, column L, paragraph 2; figure 2A * |