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EP0638928
European procedure
Extract from the Register of European Patents
EP About this file: EP0638928
| EP0638928 - Power semiconductor device with pressure contact [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 20.08.1999 Database last updated on 08.10.2024 | Most recent event Tooltip | 20.08.1999 | No opposition filed within time limit | published on 06.10.1999 [1999/40] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1998/42] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | ||
| Former [1995/07] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Kuhnert, Reinhold, Dr., Dipl.-Phys. Dachauer Strasse 140 D D-80637 München / DE | [1995/07] | Application number, filing date | 94111249.2 | 19.07.1994 | [1995/07] | Priority number, date | DE19934326733 | 09.08.1993 Original published format: DE 4326733 | [1995/07] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0638928 | Date: | 15.02.1995 | Language: | DE | [1995/07] | Type: | B1 Patent specification | No.: | EP0638928 | Date: | 14.10.1998 | Language: | DE | [1998/42] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.12.1994 | Classification | IPC: | H01L23/48, H01L23/051, H01L23/492 | [1995/07] | CPC: |
H01L23/4928 (EP,US);
H01L23/051 (EP,US);
H01L23/4922 (EP,US);
H01L24/72 (EP,US);
H01L2924/01004 (EP,US);
H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US);
H01L2924/01013 (EP,US);
H01L2924/01015 (EP,US);
H01L2924/01018 (EP,US);
H01L2924/01029 (EP,US);
H01L2924/01033 (EP,US);
H01L2924/01042 (EP,US);
H01L2924/01047 (EP,US);
H01L2924/01074 (EP,US);
| Designated contracting states | CH, DE, FR, GB, IT, LI [1995/07] | Title | German: | Leistungs-Halbleiterbauelement mit Druckkontakt | [1995/07] | English: | Power semiconductor device with pressure contact | [1995/07] | French: | Dispositif à semi-conducteur de puissance ayant des contacts à pression | [1995/07] | Examination procedure | 18.05.1995 | Examination requested [1995/28] | 19.12.1997 | Despatch of communication of intention to grant (Approval: Yes) | 22.01.1998 | Communication of intention to grant the patent | 20.04.1998 | Fee for grant paid | 20.04.1998 | Fee for publishing/printing paid | Opposition(s) | 15.07.1999 | No opposition filed within time limit [1999/40] | Fees paid | Renewal fee | 19.07.1996 | Renewal fee patent year 03 | 21.07.1997 | Renewal fee patent year 04 | 20.07.1998 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]JPS5778144 ; | [A]JPS60239044 ; | [A]JPS5921033 ; | [A]DE2023436 (COMPAGNIE GENERALE D'ELECTRICITÉ) [A] 1,2,5,6,9 * page 1 - page 4 * * page 8; figure - *; | [A]DE3838968 (ASEA BROWN BOVERI [CH]) [A] 1,7,8 * abstract *; | [A]US4403242 (TSURUOKA MASAO [JP]) [A] 1 * column 4, line 21 - line 66; figure - *; | [A]EP0285074 (TOSHIBA KK [JP]) [A] 3,4 * column 3, line 30 - column 4, line 29 * | [Y] - PATENT ABSTRACTS OF JAPAN, (19820817), vol. 6, no. 155, Database accession no. (E - 125), & JP57078144 A 19820515 (HITACHI LTD.) [Y] 1,2,5,6 * abstract * | [DY] - H. DIMIGEN ET AL, SURFACE AND COATINGS TECHNOLOGY, LAUSANNE, CH, (1991), vol. 49, pages 543 - 547 [DY] 1,2,5,6 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19860412), vol. 10, no. 95, Database accession no. (E - 395), & JP60239044 A 19851127 (SUMITOMO) [A] 1,2,7,8 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19840515), vol. 8, no. 103, Database accession no. (E - 244), & JP59021033 A 19840202 (MITSUBISHI) [A] 3,4 * abstract * |