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Extract from the Register of European Patents

EP About this file: EP0646954

EP0646954 - Low-defect one-step etching process [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 25.09.1998 Database last updated on 27.07.2024
Most recent event Tooltip	25.09.1998	Application deemed to be withdrawn	published on 11.11.1998 [1998/46]
Applicant(s)	For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP
	[N/P]
Former [1995/14]	For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP
Inventor(s)	01 / Wang, Wen-Chow Vincent 18457 Edminton Drive Cupertino, California 95014 / US
	02 / Chou, William Tai-Hua 11551 Lake Spring Court Cupertino, California 95014 / US
	[1995/14]
Representative(s)	Stebbing, Timothy Charles, et al Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn London WC1V 7JH / GB
	[N/P]
Former [1995/14]	Stebbing, Timothy Charles, et al Haseltine Lake & Co. Hazlitt House 28 Southampton Buildings Chancery Lane London WC2A 1AT / GB
Application number, filing date	94111619.6	26.07.1994
	[1995/14]
Priority number, date	US19930128524	29.09.1993 Original published format: US 128524
	[1995/14]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0646954
	Date:	05.04.1995
	Language:	EN
	[1995/14]
	Type:	A3 Search report
	No.:	EP0646954
	Date:	27.08.1997
	[1997/35]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	11.07.1997
Classification	IPC:	H01L21/48, H01L23/64, H01L23/538	[1997/30]
	CPC:	H01L21/486 (EP); H05K3/0041 (EP); H05K1/162 (EP); H05K2201/09518 (EP); H05K2203/0554 (EP); H05K3/4644 (EP)
	Former IPC [1995/14]	H01L21/48
Designated contracting states	DE, GB [1995/14]
Title	German:	Ätzverfahren in einer Stufe mit geringen Fehlstellen	[1995/14]
	English:	Low-defect one-step etching process	[1995/14]
	French:	Procédé de gravure en un étage à faibles défauts	[1995/14]
Examination procedure	28.02.1998	Application deemed to be withdrawn, date of legal effect [1998/46]
	18.06.1998	Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [1998/46]
Fees paid	Renewal fee
	25.07.1996	Renewal fee patent year 03
	23.07.1997	Renewal fee patent year 04
	Penalty fee
	Penalty fee Rule 85b EPC 1973
	09.04.1998	M01 Not yet paid
	Additional fee for renewal fee
	31.07.1998	05 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XAY]US5227013 (KUMAR NALIN) [X] 2,4-9 * column 1, line 14 - line 38 * * column 1, line 66 - column 2, line 30 * * column 3, line 28 - column 6, line 21; figures 1-7 * [A] 12 [Y] 1,3;
		[XA]EP0552984 (HITACHI LTD) [X] 9 * page 7, line 45 - page 8, line 12; figures 1A-1F * [A] 1,2,5-8;
		[A]JPH05243388 ;
		[A]JPH0319335 ;
		[A]JPH01281732 ;
		[A]US5177670 (SHINOHARA HIROICHI ET AL) [A] 10-12 * abstract *;
		[A]EP0481736 (NIPPON ELECTRIC CO) [A] 10 * abstract * * column 2, line 25 - line 33 *;
		[A]JPH01292895 ;
		[A]JPH01189999 ;
		[A]EP0526707 (HUGHES AIRCRAFT CO) [A] 10,11 * figures 1,2 *
		[PXA] - W.H. JUAN ET AL., "High aspect ratio polyimide etching using an oxygen plasma generated by electron cyclotron resonance source", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, USA, (199401), vol. 12, no. 1, pages 422 - 426, XP000616794 [PX] 1 * page 422, column L, paragraph 2 - column R, paragraph 1 * [A] 2,9 DOI: http://dx.doi.org/10.1116/1.587138
		[Y] - FORTUNO-WILTSHIRE, "Etch characterization of an electron cyclotron resonance processor reactor", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, USA, (199107), vol. 9, no. 4, pages 2356 - 2363, XP000616793 [Y] 1,3 * page 2361, column L, paragraph D - page 2362, column R, paragraph 1 * DOI: http://dx.doi.org/10.1116/1.577276
		[A] - PATENT ABSTRACTS OF JAPAN, (19931221), vol. 017, no. 702, Database accession no. (E - 1482), & JP05243388 A 19930921 (NEC CORP) [A] 1-3,7-9 * abstract *
		[A] - PATENT ABSTRACTS OF JAPAN, (19910409), vol. 015, no. 139, Database accession no. (E - 1053), & JP03019335 A 19910128 (FUJITSU LTD) [A] 1-3,7,9 * abstract *
		[A] - MINORU YAMADA ET AL., "ECR plasma etcher", THE SUMITO SEARCH, (199110), no. 47, pages 128 - 130, XP000196879 [A] 1-3,7,9 * the whole document *
		[A] - PATENT ABSTRACTS OF JAPAN, (19900205), vol. 014, no. 062, Database accession no. (E - 0883), & JP01281732 A 19891113 (FUJITSU LTD) [A] 1-3,7,9 * abstract *
		[A] - KURAMOCHI T ET AL, "MULTI-CHIP-MODULE SUBSTRATE DECREASING SIGNAL DELAY AND IMPROVING THERMAL CONDUCTIVITY", PROCEEDINGS OF THE ELECTRONICS MANUFACTURING SYMPOSIUM, SAN FRANCISCO, SEPT. 16 - 18, 1991, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, (19910916), no. SYMP. 11, pages 255 - 261, XP000244937 [A] 10 * abstract * * page 259, column R - page 260, column R * DOI: http://dx.doi.org/10.1109/IEMT.1991.279790
		[A] - PATENT ABSTRACTS OF JAPAN, (19900214), vol. 014, no. 079, Database accession no. (E - 0888), & JP01292895 A 19891127 (NEC CORP) [A] 10 * abstract *
		[A] - PATENT ABSTRACTS OF JAPAN, (19891031), vol. 013, no. 481, Database accession no. (E - 838), & JP01189999 A 19890731 (MATSUSHITA ELECTRIC WORKS LTD) [A] 10 * abstract *

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