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EP0661732
European procedure
Extract from the Register of European Patents
EP About this file: EP0661732
| EP0661732 - A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 15.04.2005 Database last updated on 26.03.2026 | Most recent event Tooltip | 17.02.2006 | Lapse of the patent in a contracting state New state(s): FR | published on 05.04.2006 [2006/14] | Applicant(s) | For all designated states Applied Materials, Inc. P.O. Box 58039 M/S 0934 3050 Bowers Avenue Santa Clara, California 95052-8039 / US | [N/P] |
| Former [2004/24] | For all designated states APPLIED MATERIALS, INC. P.O. Box 58039, M/S 0934, 3050 Bowers Avenue Santa Clara, California 95052-8039 / US | ||
| Former [1995/27] | For all designated states APPLIED MATERIALS, INC. P.O. Box 58039 3050 Bowers Avenue Santa Clara California 95052-8039 / US | Inventor(s) | 01 /
Law, Kam 461 Riviera Drive Union City, California 94587 / US | 02 /
Olsen, Jeff 20880 Canyon View Drive Saratoga, California 95070 / US | [1995/27] | Representative(s) | Käck, Jürgen, et al Patentanwälte Kahler Käck Mollekopf Vorderer Anger 239 86899 Landsberg/Lech / DE | [N/P] |
| Former [2002/40] | Käck, Jürgen, et al Kahler Käck Mollekopf Vorderer Anger 239 86899 Landsberg / DE | ||
| Former [1996/30] | Kahler, Kurt, Dipl.-Ing. Patentanwälte Kahler, Käck, Fiener et col., Vorderer Anger 268 86899 Landsberg/Lech / DE | ||
| Former [1995/27] | Kahler, Kurt, Dipl.-Ing. Patentanwälte Kahler, Käck, Fiener & Sturm P.O. Box 12 49 D-87712 Mindelheim / DE | Application number, filing date | 94118479.8 | 24.11.1994 | [1995/27] | Priority number, date | US19930174095 | 28.12.1993 Original published format: US 174095 | [1995/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0661732 | Date: | 05.07.1995 | Language: | EN | [1995/27] | Type: | A3 Search report | No.: | EP0661732 | Date: | 14.08.1996 | [1996/33] | Type: | B1 Patent specification | No.: | EP0661732 | Date: | 09.06.2004 | Language: | EN | [2004/24] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.07.1996 | Classification | IPC: | H01L21/316, C23C16/30, C23C16/50 | [1995/27] | CPC: |
H10P14/6927 (EP,US);
C23C16/308 (EP,US);
C23C16/45565 (EP,US);
C23C16/5096 (EP,US);
H10P14/6336 (EP,US);
H10P14/6682 (EP,US);
| Designated contracting states | DE, FR, GB [1995/27] | Title | German: | Verfahren zur plasma-unterstützten chemischen Dampfabscheidung von Silizium-Oxynitridschichten | [1995/27] | English: | A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition | [1995/27] | French: | Procédé de dépôt chimique en phase vapeur assisté par plasma de couche d'oxynitrure de silicium | [1995/27] | Examination procedure | 14.02.1997 | Examination requested [1997/16] | 02.11.1998 | Despatch of a communication from the examining division (Time limit: M06) | 14.05.1999 | Reply to a communication from the examining division | 14.11.2000 | Date of oral proceedings | 04.12.2000 | Despatch of communication that the application is refused, reason: substantive examination {1} | 04.12.2000 | Minutes of oral proceedings despatched | 08.10.2003 | Communication of intention to grant the patent | 05.01.2004 | Fee for grant paid | 05.01.2004 | Fee for publishing/printing paid | Appeal following examination | 26.01.2001 | Appeal received No. T0409/01 | 04.04.2001 | Statement of grounds filed | 26.06.2003 | Result of appeal procedure: remittal for grant | Opposition(s) | 10.03.2005 | No opposition filed within time limit [2005/22] | Fees paid | Renewal fee | 29.11.1996 | Renewal fee patent year 03 | 28.11.1997 | Renewal fee patent year 04 | 30.11.1998 | Renewal fee patent year 05 | 30.11.1999 | Renewal fee patent year 06 | 30.11.2000 | Renewal fee patent year 07 | 30.11.2001 | Renewal fee patent year 08 | 28.11.2002 | Renewal fee patent year 09 | 07.11.2003 | Renewal fee patent year 10 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 09.06.2004 | DE | 10.09.2004 | [2006/14] |
| Former [2005/30] | DE | 10.09.2004 | Documents cited: | Search | [XY] W.R.KNOLLE ET AL.: "Characterization of Oxygen-Doped, Plasma-Deposited Silicon Nitride", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 135, no. 5, May 1988 (1988-05-01), MANCHESTER, NEW HAMPSHIRE US, pages 1211 - 1217, XP002006507 | [XY] KNOLLE W R ET AL: "PLASMA-DEPOSITED SILICON OXYNITRIDE FROM SILANE, NITROGEN, AND CARBON DIOXIDE OR CARBON MONOXIDE OR NITRIC OXIDE", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 139, no. 11, 1 November 1992 (1992-11-01), pages 3310 - 3316, XP000360631 [X] 1,2,5-8,11-13,15,16,18-20 * the whole document * [Y] 3,4,9,21 | [X] T.S.ERIKSSON ET AL.: "Infrared optical properties of silicon oxynitride films: Experimental data and theoretical interpretation", JOURNAL OF APPLIED PHYSICS, vol. 60, no. 6, September 1986 (1986-09-01), NEW YORK US, pages 2081 - 2091, XP002006508 [X] 1,2,5-7,11,12,15,18,20 * the whole document * DOI: http://dx.doi.org/10.1063/1.337212 | [X] "5me COLLOQUE INTERNATIONAL SUR LES PLASMAS ET LA PULVRISATION CATHODIQUE CIP 85", 1985, SOCIT FRANAISE DU VIDE, PARIS, FRANCE, XP002006509, 13148 [X] 1,6 * the whole document * | [Y] HIRAO T ET AL: "PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 27, no. 1, 1 January 1988 (1988-01-01), pages L21 - 23, XP000111327 DOI: http://dx.doi.org/10.1143/JJAP.27.L21 |