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EP0630053
European procedure
Extract from the Register of European Patents
EP About this file: EP0630053
| EP0630053 - Heterojunction type bipolar transistor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 18.09.1998 Database last updated on 29.07.2024 | Most recent event Tooltip | 18.09.1998 | No opposition filed within time limit | published on 04.11.1998 [1998/45] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22 Nagaike-cho Abeno-ku Osaka-shi Osaka-fu 545-0013 / JP | [N/P] |
| Former [1994/51] | For all designated states SHARP KABUSHIKI KAISHA 22-22 Nagaike-cho Abeno-ku Osaka 545 / JP | Inventor(s) | 01 /
Twynam, John Kevin 2-309, 2613-1 Ichinomoto-cho Tenri-shi, Nara-ken / JP | 02 /
Shinozaki, Toshiyuki 816 Raporutenri 2613-1, Ichinomoto-cho Tenri-shi, Nara-ken / JP | 03 /
Yagura, Motoji 743 Raporutenri 2613-1, Ichinomoto-cho Tenri-shi, Nara-ken / JP | 04 /
Kinosada, Toshiaki 9-20-401 Fuchu-cho 5 Izumi-shi, Osaka-fu / JP | [1994/51] | Representative(s) | Brown, Kenneth Richard, et al R.G.C. Jenkins & Co 26 Caxton Street London SW1H 0RJ / GB | [N/P] |
| Former [1994/51] | Brown, Kenneth Richard, et al R.G.C. Jenkins & Co. 26 Caxton Street London SW1H 0RJ / GB | Application number, filing date | 94304131.9 | 08.06.1994 | [1994/51] | Priority number, date | JP19930137222 | 08.06.1993 Original published format: JP 13722293 | [1994/51] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0630053 | Date: | 21.12.1994 | Language: | EN | [1994/51] | Type: | A3 Search report | No.: | EP0630053 | Date: | 12.04.1995 | Language: | EN | [1995/15] | Type: | B1 Patent specification | No.: | EP0630053 | Date: | 12.11.1997 | Language: | EN | [1997/46] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.02.1995 | Classification | IPC: | H01L29/737 | [1997/46] | CPC: |
H01L29/0817 (EP);
H01L29/7371 (EP)
|
| Former IPC [1994/51] | H01L29/73 | Designated contracting states | DE, FR, GB, SE [1994/51] | Title | German: | Heteroübergang-Bipolartransistor | [1994/51] | English: | Heterojunction type bipolar transistor | [1994/51] | French: | Transistor bipolaire à hétérojonction | [1994/51] | Examination procedure | 30.05.1995 | Examination requested [1995/30] | 23.10.1995 | Despatch of a communication from the examining division (Time limit: M04) | 31.01.1996 | Reply to a communication from the examining division | 07.02.1997 | Despatch of communication of intention to grant (Approval: Yes) | 15.05.1997 | Communication of intention to grant the patent | 18.08.1997 | Fee for grant paid | 18.08.1997 | Fee for publishing/printing paid | Opposition(s) | 13.08.1998 | No opposition filed within time limit [1998/45] | Fees paid | Renewal fee | 10.06.1996 | Renewal fee patent year 03 | 10.06.1997 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0529772 (TRW INC.) [A] 1 * the whole document *; | [A]EP0297886 (KABUSHIKI KAISHA TOSHIBA) [A] 1 * the whole document *; | [DA]JPH0346334 ; | [PA]EP0562272 (TEXAS INSTRUMENTS INCORPORATED) | [A] - G. GAO ET AL., "Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, NEW YORK US, (199102), vol. 38, no. 2, doi:doi:10.1109/16.69894, pages 185 - 196, XP000165509 [A] 1 * the whole document * DOI: http://dx.doi.org/10.1109/16.69894 | [DA] - PATENT ABSTRACTS OF JAPAN, (19910513), vol. 15, no. 185, Database accession no. (E - 1066), & JP03046334 A 19910227 (MATSUSHITA ELECTRON CORP) [DA] 1 * abstract * |