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EP0676811
European procedure
Extract from the Register of European Patents
EP About this file: EP0676811
| EP0676811 - EEPROM cell with isolation transistor and methods for making and operating the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 23.05.2003 Database last updated on 03.06.2024 | Most recent event Tooltip | 23.05.2003 | No opposition filed within time limit | published on 09.07.2003 [2003/28] | Applicant(s) | For all designated states MOTOROLA, INC. 1303 East Algonquin Road Schaumburg, IL 60196 / US | [1995/41] | Inventor(s) | 01 /
Chang, Ko-Min 11912 Bittern Hollow Austin, Texas 78758 / US | 02 /
Shum, Danny Pak-Chum 7200 Rain Creek Pkwy Austin, Texas 78759 / US | 03 /
Chang, Kuo-Tung 8602 Bisbee Court Austin, Texas 78745 / US | [1995/41] | Representative(s) | Hudson, Peter David, et al Motorola European Intellectual Property Midpoint Alencon Link, Basingstoke Hampshire RG21 7PL / GB | [N/P] |
| Former [1995/41] | Hudson, Peter David, et al Motorola European Intellectual Property Midpoint Alencon Link Basingstoke, Hampshire RG21 7PL / GB | Application number, filing date | 95105170.5 | 06.04.1995 | [1995/41] | Priority number, date | US19940225868 | 11.04.1994 Original published format: US 225868 | [1995/41] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0676811 | Date: | 11.10.1995 | Language: | EN | [1995/41] | Type: | B1 Patent specification | No.: | EP0676811 | Date: | 17.07.2002 | Language: | EN | [2002/29] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 01.08.1995 | Classification | IPC: | H01L27/115 | [1995/41] | CPC: |
H01L29/7883 (EP,US);
H10B69/00 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1995/41] | Title | German: | EEPROM-Zelle mit Isolationstransistor und Betriebs- und Herstellungsverfahren | [1995/41] | English: | EEPROM cell with isolation transistor and methods for making and operating the same | [1995/41] | French: | Cellule EEPROM avec transistor d'isolation et procédés pour sa fabrication et son fonctionnement | [1995/41] | Examination procedure | 11.04.1996 | Examination requested [1996/23] | 29.10.1997 | Despatch of a communication from the examining division (Time limit: M04) | 26.02.1998 | Reply to a communication from the examining division | 17.06.1999 | Despatch of a communication from the examining division (Time limit: M04) | 22.10.1999 | Reply to a communication from the examining division | 18.05.2001 | Despatch of communication of intention to grant (Approval: Yes) | 28.09.2001 | Communication of intention to grant the patent | 08.01.2002 | Fee for grant paid | 08.01.2002 | Fee for publishing/printing paid | Opposition(s) | 22.04.2003 | No opposition filed within time limit [2003/28] | Fees paid | Renewal fee | 02.05.1997 | Renewal fee patent year 03 | 04.05.1998 | Renewal fee patent year 04 | 03.05.1999 | Renewal fee patent year 05 | 07.04.2000 | Renewal fee patent year 06 | 09.04.2001 | Renewal fee patent year 07 | 08.04.2002 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0284724 (TOSHIBA KK [JP], et al) [A] 1-10 * abstract *; | [A]EP0481392 (NEC CORP [JP]) [A] 1-10* figure 1 *; | [A]EP0517607 (COMMISSARIAT ENERGIE ATOMIQUE [FR]) [A] 1-10 * column 8, line 6 - column 10, line 15; figures 5-11 *; | [A]US5280446 (MA YUEH Y [US], et al) [A] 1-10 * figures 4,7 *; | [A] - LAMBERTSON R ET AL, "A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL", PROCEEDINGS OF THE INTERNATIONAL ELECTRON DEVICES MEETING, WASHINGTON, DEC. 8 - 11, 1991, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, (19911208), no. -, pages 91/299 - 302, XP000342149 [A] 1-10 * column W * | Examination | EP0335395 | US5081054 |