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EP About this file: EP0684637

EP0684637 - Semiconductor device having a thermal nitride film and manufacturing method thereof [Right-click to bookmark this link]
Status	The application has been refused Status updated on 15.02.2002 Database last updated on 07.06.2024
Most recent event Tooltip	15.02.2002	Refusal of application	published on 03.04.2002 [2002/14]
Applicant(s)	For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP
	[N/P]
Former [1995/48]	For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Inventor(s)	01 / Kasai, Yoshio, c/o Int. Prop. Div., K.K. Toshiba 1-1 Shibaura 1-chome, Minato-ku Tokyo 105 / JP
	02 / Suzuki, Takashi, c/o Int. Prop. Div., K.K. Toshiba 1-1 Shibaura 1-chome, Minato-ku Tokyo 105 / JP
	03 / Tsuda, Takanori, c/o Int. Prop. Div., K.K. Toshiba 1-1 Shibaura 1-chome, Minato-ku Tokyo 105 / JP
	04 / Mikata, Yuuichi, c/o Int. Prop. Div., K.K. Toshiba 1-1 Shibaura 1-chome, Minato-ku Tokyo 105 / JP
	05 / Akahori, Hiroshi, c/o Int.Prop.Div., K.K. Toshiba 1-1 Shibaura 1-chome, Minato-ku Tokyo 105 / JP
	06 / Yamamoto, Akihito, c/o Int.Prop.Div., K.K. Toshiba 1-1 Shibaura 1-chome, Minato-ku Tokyo 105 / JP
	[1995/48]
Representative(s)	Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Arabellastrasse 4 81925 München / DE
	[N/P]
Former [1995/48]	Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Arabellastrasse 4 D-81925 München / DE
Application number, filing date	95108093.6	26.05.1995
	[1995/48]
Priority number, date	JP19940115293	27.05.1994 Original published format: JP 11529394
	JP19950121030	19.05.1995 Original published format: JP 12103095
	[1995/48]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0684637
	Date:	29.11.1995
	Language:	EN
	[1995/48]
	Type:	A3 Search report
	No.:	EP0684637
	Date:	25.09.1996
	[1996/39]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	08.08.1996
Classification	IPC:	H01L21/318, H01L29/94, // H01L21/76	[1995/48]
	CPC:	H01L21/28167 (EP,US); H01L27/10 (KR); H01L21/0217 (EP,KR,US); H01L21/02164 (EP,KR,US); H01L21/022 (EP,KR,US); H01L21/02247 (EP,KR,US); (+) H01L21/02255 (EP,KR,US); H01L21/02271 (EP,KR,US); H01L21/3185 (US); H01L29/66181 (EP,US) (-)
Designated contracting states	DE, FR, GB [1995/48]
Title	German:	Halbleiterbauelement mit thermischem Nitridfilm und Verfahren zu seiner Herstellung	[1995/48]
	English:	Semiconductor device having a thermal nitride film and manufacturing method thereof	[1995/48]
	French:	Dispositif semi-conducteur ayant un film de nitrure thermique et procédé pour sa fabrication	[1995/48]
Examination procedure	26.05.1995	Examination requested [1995/48]
	09.11.1999	Despatch of a communication from the examining division (Time limit: M04)
	17.03.2000	Reply to a communication from the examining division
	21.06.2001	Application refused, date of legal effect [2002/14]
	21.06.2001	Date of oral proceedings
	20.07.2001	Despatch of communication that the application is refused, reason: substantive examination [2002/14]
	20.07.2001	Minutes of oral proceedings despatched
Fees paid	Renewal fee
	12.05.1997	Renewal fee patent year 03
	11.05.1998	Renewal fee patent year 04
	12.05.1999	Renewal fee patent year 05
	15.05.2000	Renewal fee patent year 06
	14.05.2001	Renewal fee patent year 07
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XY]JPS5754332 ;
		[Y]JPS6387772 ;
		[XY]US4298629 (NOZAKI TAKAO, et al) [X] 1,2 * column 2, line 7 - column 3, line 42 * * column 4, line 29 - column 5, line 56 * * column 7, lines 40-62 * * column 8, line 58 - column 9, line 12 * [Y] 4,5,11,14,17,18;
		[XY]US4353936 (NOZAKI TAKAO, et al) [X] 1,2 * abstract * * column 1, line 51 - column 3, line 35 * [Y] 11,12,17,18;
		[X]EP0266268 (NISSIM YVES, et al) [X] 6,8,9,19 * claims 1-4,8,10,12 * * page 2, lines 22-23 * * page 3, lines 12-15 * * page 4, lines 12-20 * * page 4, lines 47-56 * * page 8, lines 10-31 *;
		[XY]US5032545 (DOAN TRUNG T [US], et al) [X] 1-3,6-8,13,15 * abstract * * figure 1 * * column 1, line 41 - column 4, line 48 * [Y] 4,5,11,12,14,17,18;
		[XY]JPH0629248 (VARIAN ASSOCIATES) [X] 1,2 * & US-A-5 376 223 (SALIMIAN SIAMAK ET AL) 27 December 1994; * * all citations make reference to the US-document * * column 3, lines 28-54 * * column 6, lines 43-64 * * column 7, lines 34-54 * * column 8, lines 17-29 * * claims 8,13 * [Y] 4,5,11,12,14,17,18;
		[PX]EP0637063 (APPLIED MATERIALS INC [US]) [PX] 6-9,11-13,15 * page 2, line 55 - page 3, line 44 * * page 4, line 22 - page 5, line 4 ** figure 3 *
		[XY] - PATENT ABSTRACTS OF JAPAN, (19820714), vol. 006, no. 128, Database accession no. (E - 118), & JP57054332 A 19820331 (NEC CORP) [X] 1,2 * abstract * [Y] 12,18
		[Y] - PATENT ABSTRACTS OF JAPAN, (19880902), vol. 012, no. 324, Database accession no. (E - 653), & JP63087772 A 19880419 (HITACHI LTD) [Y] 4,5,14,17 * abstract * * page 377, left hand column, last paragraph *

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