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EP0697730
European procedure
Extract from the Register of European Patents
EP About this file: EP0697730
| EP0697730 - Method of forming an Al-Ge alloy with WGe polishing stop [Right-click to bookmark this link] | |||
| Former [1996/08] | High aspect ratio low resistivity lines/vias by surface diffusion | ||
| [1999/02] | Status | No opposition filed within time limit Status updated on 22.09.2000 Database last updated on 22.05.2024 | Most recent event Tooltip | 22.09.2000 | No opposition filed within time limit | published on 08.11.2000 [2000/45] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [1997/06] | For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | ||
| Former [1996/08] | For all designated states INTERNATIONAL BUSINESS MACHINES CORPORATION Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Joshi, Rajiv Vasant 1418 Pinebrook Court Yorktown Heigths, New York 10598 / US | 02 /
Tejwani, Manu Jamnadas 1327 Ethan Court Yorktown Heigths, New York 10598 / US | 03 /
Srikrishnan, Kris Venkatraman 33 Sherwood Heights Wappingers Falls, New York 12590 / US | [1996/08] | Representative(s) | Rach, Werner IBM Deutschland Management & Business Support GmbH Patentwesen u. Urheberrecht 71137 Ehningen / DE | [N/P] |
| Former [1996/08] | Rach, Werner, Dr. IBM Deutschland Informationssysteme GmbH, Patentwesen und Urheberrecht D-70548 Stuttgart / DE | Application number, filing date | 95110478.5 | 05.07.1995 | [1996/08] | Priority number, date | US19940286605 | 05.08.1994 Original published format: US 286605 | [1996/08] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0697730 | Date: | 21.02.1996 | [1996/08] | Type: | A3 Search report | No.: | EP0697730 | Date: | 14.08.1996 | [1996/33] | Type: | B1 Patent specification | No.: | EP0697730 | Date: | 24.11.1999 | Language: | EN | [1999/47] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 01.07.1996 | Classification | IPC: | H01L23/532, H01L23/522 | [1996/08] | CPC: |
H01L21/76849 (EP,US);
H01L21/768 (KR);
H01L21/321 (EP,US);
H01L21/3212 (EP,US);
H01L21/76807 (EP,US);
H01L21/76838 (EP,US);
H01L21/76867 (EP,US);
H01L21/76877 (EP,US);
H01L21/76886 (EP,US);
H01L23/5226 (EP,US);
H01L23/53209 (EP,US);
H01L23/53219 (EP,US);
H01L23/53242 (EP,US);
H01L23/53247 (EP,US);
H01L2924/0002 (EP,US);
H01L2924/09701 (EP,US);
Y10T428/12486 (EP,US);
Y10T428/12528 (EP,US);
Y10T428/12674 (EP,US);
Y10T428/12736 (EP,US);
Y10T428/1284 (EP,US);
| C-Set: |
H01L2924/0002, H01L2924/00 (EP,US)
| Designated contracting states | DE, FR, GB [1996/08] | Title | German: | Verfahren zur Herstellung einer Al-Ge Legierung mit einer WGe Polierstoppschicht | [1999/02] | English: | Method of forming an Al-Ge alloy with WGe polishing stop | [1999/02] | French: | Procédé de formation d'un alliage de Al-Ge avec couche d'arrêt de polissage en WGe | [1999/02] |
| Former [1996/08] | Niederohmige Leiter/Durchkontaktierungen durch Oberflächendiffusion mit hohem Aspektverhältnis | ||
| Former [1996/08] | High aspect ratio low resistivity lines/vias by surface diffusion | ||
| Former [1996/08] | Lignes/trous de contact à faible résistance à haut facteur de forme par diffusion superficielle | Examination procedure | 26.06.1996 | Examination requested [1996/34] | 12.01.1998 | Despatch of a communication from the examining division (Time limit: M04) | 20.04.1998 | Reply to a communication from the examining division | 18.09.1998 | Despatch of a communication from the examining division (Time limit: M04) | 11.11.1998 | Reply to a communication from the examining division | 15.01.1999 | Despatch of communication of intention to grant (Approval: Yes) | 21.05.1999 | Communication of intention to grant the patent | 31.07.1999 | Fee for grant paid | 31.07.1999 | Fee for publishing/printing paid | Divisional application(s) | EP99101825.0 / EP0915501 | Opposition(s) | 25.08.2000 | No opposition filed within time limit [2000/45] | Fees paid | Renewal fee | 16.07.1997 | Renewal fee patent year 03 | 17.07.1998 | Renewal fee patent year 04 | 20.07.1999 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US5308794 (TU KING-NING [US]) [A] 1,5,10 * column W *; | [A]US5169803 (MIYAKAWA KUNIKO [JP]) [A] 1,5,10 * column W *; | [A]EP0499050 (IBM [US]) [A] 1,5,10 * column W * | [DA] - K. KIKUTA ET AL., "0.25mum contact hole filling by AlGe reflow sputtering", 1991 SYMPOSIUM ON VLSI TECHNOLOGY, OISO, JAPAN, (19910528), pages 35 - 36, XP000259967 [DA] 1,5,10 * the whole document * | [DA] - K.KIKUTA ET AL., "Al-Ge reflow sputtering for submicron-contact-hole filling", PROCEEDINGS OF THE 1991 VMIC CONFERENCE, (19910611), pages 163 - 170, XP002005422 [DA] 1,5,10 * the whole document * | by applicant | - KIKUTA ET AL., Proc. of 1991 VMIC Conference, pages 163 - 170 | - "O.25 mum Contact Hole Filling by Al-Ge Reflow Sputtering", Proceedings of the 1991 Symposium on VLSI Technology, pages 35 - 36 |