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Extract from the Register of European Patents

EP About this file: EP0689232

EP0689232 - Process for deposition of a tungsten layer on a semiconductor wafer [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  02.02.2001
Database last updated on 19.07.2024
Most recent event   Tooltip02.02.2001Withdrawal of applicationpublished on 21.03.2001 [2001/12]
Applicant(s)For all designated states
Applied Materials, Inc.
P.O. Box 58039
M/S 0934
3050 Bowers Avenue
Santa Clara, California 95052-8039 / US
[N/P]
Former [1997/06]For all designated states
APPLIED MATERIALS, INC.
P.O. Box 58039, M/S 0934, 3050 Bowers Avenue
Santa Clara, California 95052-8039 / US
Former [1995/52]For all designated states
APPLIED MATERIALS INC.
PO Box 58039
Santa Clara California 95052 / US
Inventor(s)01 / Chang, Mei
863 E. Estates Dr.
Cupertino, CA 95014 / US
02 / Leung, Cissy
348 Pagosa Way
Fremont, CA 94539 / US
03 / Wang, David Nin-Kou
15230 Sobey Rd.
Saratoga, CA 95070 / US
04 / Cheng, David
974 Sherman Oaks Dr.
San Jose, CA 95128 / US
[1995/52]
Representative(s)Zimmermann & Partner Patentanwälte mbB
Postfach 330 920
80069 München / DE
[N/P]
Former [2000/03]Zimmermann & Partner
Postfach 33 09 20
80069 München / DE
Former [1995/52]Diehl, Hermann, Dr. Dipl.-Phys., et al
DIEHL, GLÄSER, HILTL & PARTNER Patentanwälte Flüggenstrasse 13
D-80639 München / DE
Application number, filing date95114145.624.08.1990
[1995/52]
Priority number, dateUS1989039865325.08.1989         Original published format: US 398653
[1995/52]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0689232
Date:27.12.1995
Language:EN
[1995/52]
Type: A3 Search report 
No.:EP0689232
Date:04.06.1997
[1997/23]
Search report(s)(Supplementary) European search report - dispatched on:EP16.04.1997
ClassificationIPC:H01L21/285, H01L21/768, H01L21/3205
[1997/19]
CPC:
H01L21/76838 (EP,US); H01L21/283 (KR); H01L21/28556 (EP,US);
H01L21/32051 (EP,US); Y10S148/025 (EP,US)
Former IPC [1995/52]H01L21/285, H01L21/768
Designated contracting statesDE,   FR,   GB,   IT,   NL [1995/52]
TitleGerman:Verfahren zur Abscheibung einer Wolfram-Schicht auf einer Halbleiterscheibe[1995/52]
English:Process for deposition of a tungsten layer on a semiconductor wafer[1995/52]
French:Procédé de dépôt d'une couche de tungstène sur une pastille semi-conductrice[1995/52]
Examination procedure08.09.1995Examination requested  [1995/52]
30.08.2000Despatch of a communication from the examining division (Time limit: M06)
23.01.2001Application withdrawn by applicant  [2001/12]
Parent application(s)   TooltipEP90116274.3  / EP0414267
Fees paidRenewal fee
08.09.1995Renewal fee patent year 03
08.09.1995Renewal fee patent year 04
08.09.1995Renewal fee patent year 05
08.09.1995Renewal fee patent year 06
30.08.1996Renewal fee patent year 07
25.08.1997Renewal fee patent year 08
31.08.1998Renewal fee patent year 09
31.08.1999Renewal fee patent year 10
30.08.2000Renewal fee patent year 11
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Documents cited:Search[A]DE1932932  (BBC BROWN BOVERI & CIE) [A] 1,7,16,22,23 * page 4, paragraph 2 *;
 [A]EP0326217  (PHILIPS NV [NL]) [A] 1-3,10-18,25-30 * column 2, line 38 - column 3, line 17 *;
 [A]JPS62253770  ;
 [A]JPS63272049  ;
 [A]EP0174743  (THIOKOL MORTON INC [US]) [A] 5,19,20 * column 1, line 1 - line 62 *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19880427), vol. 012, no. 139, Database accession no. (C - 491), & JP62253770 A 19871105 (HITACHI LTD) [A] 13,14,28,29 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19890307), vol. 013, no. 097, Database accession no. (E - 723), & JP63272049 A 19881109 (TOSHIBA CORP) [A] 1-6,16-21 * abstract *
by applicantUS4785962
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.