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Extract from the Register of European Patents

EP About this file: EP0708482

EP0708482 - BiCDMOS process technology. [Right-click to bookmark this link]
Former [1996/17]BiCDMOS process technology and structures
[2003/22]
StatusNo opposition filed within time limit
Status updated on  28.10.2005
Database last updated on 03.06.2024
Most recent event   Tooltip17.02.2006Lapse of the patent in a contracting statepublished on 05.04.2006  [2006/14]
Applicant(s)For all designated states
SILICONIX Incorporated
2201 Laurelwood Road
Santa Clara, California 95054 / US
[N/P]
Former [1996/17]For all designated states
SILICONIX Incorporated
2201 Laurelwood Road
Santa Clara California 95054 / US
Inventor(s)01 / Williams, Richard K.
10292 Norwick Avenue
Cupertino, CA 95014 / US
02 / Yilmaz, Hamza
18549 Paseo Pueblo
Saratoga, CA 95070 / US
03 / Cornell, Michael E.
663 Regas Drive
Campbell, CA 95008 / US
04 / Chen, Jun Wei
19725 Braemar Drive
Saratoga, CA 95070 / US
[1996/17]
Representative(s)Ebner von Eschenbach, Jennifer
Ladas & Parry LLP
Dachauerstrasse 37
80335 München / DE
[N/P]
Former [2004/06]Ebner von Eschenbach, Jennifer
Ladas & Parry, Dachauerstrasse 37
80335 München / DE
Former [1996/17]Reinhard - Skuhra - Weise & Partner
Postfach 44 01 51
D-80750 München / DE
Application number, filing date95116353.417.10.1995
[1996/17]
Priority number, dateUS1994032395017.10.1994         Original published format: US 323950
[1996/17]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0708482
Date:24.04.1996
Language:EN
[1996/17]
Type: A3 Search report 
No.:EP0708482
Date:26.03.1997
[1997/13]
Type: B1 Patent specification 
No.:EP0708482
Date:22.12.2004
Language:EN
[2004/52]
Search report(s)(Supplementary) European search report - dispatched on:EP06.02.1997
ClassificationIPC:H01L21/8249, H01L27/06, H01L21/265
[1997/09]
CPC:
H01L29/7816 (EP,US); H01L21/8249 (EP,US); H01L27/0635 (EP,US);
H01L29/1004 (EP,US); H01L29/66272 (EP,US); H01L29/7322 (EP,US);
H01L29/7809 (EP,US); H01L29/7835 (EP,US); H01L29/0847 (EP,US);
H01L29/0878 (EP,US); Y10S148/082 (EP,US); Y10S148/126 (EP,US);
Y10S438/983 (EP,US) (-)
Former IPC [1996/17]H01L21/8249, H01L27/06
Designated contracting statesDE,   IT,   NL [1996/17]
TitleGerman:BiCDMOS-Herstellungstechnologie.[2003/22]
English:BiCDMOS process technology.[2003/22]
French:Technologie de fabrication BiCDMOS.[2003/22]
Former [1996/17]BiCDMOS-Herstellungstechnologie und ihre Strukturen
Former [1996/17]BiCDMOS process technology and structures
Former [1996/17]Technologie de fabrication BiCDMOS et ses structures
Examination procedure02.07.1997Examination requested  [1997/36]
10.08.1999Despatch of a communication from the examining division (Time limit: M06)
07.02.2000Reply to a communication from the examining division
04.05.2000Despatch of a communication from the examining division (Time limit: M06)
27.10.2000Reply to a communication from the examining division
20.08.2002Despatch of a communication from the examining division (Time limit: M06)
18.02.2003Reply to a communication from the examining division
24.09.2003Despatch of a communication from the examining division (Time limit: M06)
29.03.2004Reply to a communication from the examining division
14.06.2004Communication of intention to grant the patent
19.10.2004Fee for grant paid
19.10.2004Fee for publishing/printing paid
Opposition(s)23.09.2005No opposition filed within time limit [2005/50]
Fees paidRenewal fee
02.10.1997Renewal fee patent year 03
07.10.1998Renewal fee patent year 04
23.10.1999Renewal fee patent year 05
15.09.2000Renewal fee patent year 06
20.09.2001Renewal fee patent year 07
27.09.2002Renewal fee patent year 08
23.10.2003Renewal fee patent year 09
25.10.2004Renewal fee patent year 10
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipNL22.12.2004
[2006/14]
Documents cited:Search[XA]EP0589675  (SILICONIX INC [US]) [X] 12,13 * page 7, line 7 - page 8, line 24; figures 11A-16A * * page 9, line 28 - line 40 * [A] 1,10,11;
 [A]US4420872  (SOLO DE ZALDIVAR JOSE [CH]) [A] 1,2,6-8 * column 5, line 34 - column 6, line 59; figures 8-12 *;
 [A]JPH01184956  ;
 [A]JPS63160276
 [A]  - PATENT ABSTRACTS OF JAPAN, (19891024), vol. 013, no. 470, Database accession no. (E - 835), & JP01184956 A 19890724 (HITACHI LTD) [A] 1,2,6,9,12 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19881109), vol. 012, no. 423, Database accession no. (E - 680), & JP63160276 A 19880704 (HITACHI LTD;OTHERS: 02) [A] 1,5,12 * abstract *
ExaminationUS4471373
by applicantUS5426328
 US19940226419
 US19920948276
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.