Extract from the Register of European Patents

EP About this file: EP0717415

EP0717415 - Semiconductor memory device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  13.02.2004
Database last updated on 11.04.2026
Most recent event   Tooltip13.02.2004No opposition filed within time limitpublished on 31.03.2004  [2004/14]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho
Saiwai-ku
Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [2003/15]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210-8572 / JP
Former [1996/25]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210 / JP
Inventor(s)01 / Kaneko, Tetsuya, c/o Intellectual Property Div.
Toshiba Corporation, 1-1-1, Shibaura
Minato-ku, Tokyo / JP
[1996/25]
Representative(s)Zangs, Rainer E., et al
Hoffmann - Eitle
ATTENTION : ADDRESS INACTIVE - USE ASS-NR - CDR / DE
[N/P]
Former [1996/25]Zangs, Rainer E., Dipl.-Ing., et al
Hoffmann, Eitle & Partner Arabellastrasse 4/VIII
81925 München / DE
Application number, filing date95118297.121.11.1995
[1996/25]
Priority number, dateJP1994031299116.12.1994         Original published format: JP 31299194
[1996/25]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0717415
Date:19.06.1996
Language:EN
[1996/25]
Type: A3 Search report 
No.:EP0717415
Date:25.08.1999
[1999/34]
Type: B1 Patent specification 
No.:EP0717415
Date:09.04.2003
Language:EN
[2003/15]
Search report(s)(Supplementary) European search report - dispatched on:EP14.07.1999
ClassificationIPC:G11C11/409, G11C7/06
[1999/35]
CPC:
G11C11/4087 (EP,US); G11C11/40 (KR); G11C11/4085 (EP,US);
G11C11/4091 (EP,US); G11C5/145 (EP,US)
Former IPC [1996/25]G11C11/409
Designated contracting statesDE,   FR,   GB [1996/25]
TitleGerman:Halbleiterspeicheranordnung[1996/25]
English:Semiconductor memory device[1996/25]
French:Dispositif de mémoire à semi-conducteurs[1996/25]
Examination procedure21.09.1999Examination requested  [1999/46]
30.05.2001Despatch of a communication from the examining division (Time limit: M04)
02.10.2001Reply to a communication from the examining division
27.05.2002Despatch of communication of intention to grant (Approval: Yes)
15.10.2002Communication of intention to grant the patent
30.12.2002Fee for grant paid
30.12.2002Fee for publishing/printing paid
Opposition(s)12.01.2004No opposition filed within time limit [2004/14]
Fees paidRenewal fee
10.11.1997Renewal fee patent year 03
10.11.1998Renewal fee patent year 04
12.11.1999Renewal fee patent year 05
13.11.2000Renewal fee patent year 06
14.11.2001Renewal fee patent year 07
13.11.2002Renewal fee patent year 08
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Documents cited:Search[X] US5267214  (FUJISHIMA KAZUYASU et al.) [X] 3-5 * column 12, line 248 - column 12, line 68 * * column 24, lines 10-20; figures 8,9 *
 [X] JPH06203600  (SAMSUNG ELECTRONIC et al.) [X] 3,4
 [X] US5396465  (OH SEUNG-CHEOL et al.) * column 1, line 27 - column 2, line 44; figures 1,2 *
 [A] US4710901  (KUMANOYA MASAKI et al.) [A] 1,2,9 * column 2, lines 20-40 * * column 5, line 30 - column 7, line 42; figures 1-3 *
 [A] US5363333  (TSUJIMOTO AKIRA et al.) [A] 9,10 * column 7, line 53 - column 8, line 63; figure 17 *
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