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EP0667638
European procedure
Extract from the Register of European Patents
EP About this file: EP0667638
| EP0667638 - Method of etching a compound semiconductor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 06.08.1999 Database last updated on 04.06.2024 | Most recent event Tooltip | 04.01.2008 | Lapse of the patent in a contracting state New state(s): IT | published on 06.02.2008 [2008/06] | Applicant(s) | For all designated states AT&T Corp. 32 Avenue of the Americas New York, NY 10013-2412 / US | [1995/33] | Inventor(s) | 01 /
Chiu, Tien-Heng 4 Manor Boulevard Spotswood, New Jersey 08884 / US | 02 /
Tsang, Won-Tien 8 Taylor Run Holmdel, New Jersey 07733 / US | [1995/33] | Representative(s) | Johnston, Kenneth Graham, et al Lucent Technologies EUR-IP UK Ltd Unit 18, Core 3 Workzone Innova Business Park Electric Avenue Enfield, EN3 7XB / GB | [N/P] |
| Former [1995/33] | Johnston, Kenneth Graham, et al AT&T (UK) Ltd. 5 Mornington Road Woodford Green Essex, IG8 OTU / GB | Application number, filing date | 95300764.8 | 08.02.1995 | [1995/33] | Priority number, date | US19940196930 | 15.02.1994 Original published format: US 196930 | [1995/33] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0667638 | Date: | 16.08.1995 | Language: | EN | [1995/33] | Type: | A3 Search report | No.: | EP0667638 | Date: | 10.07.1996 | [1996/28] | Type: | B1 Patent specification | No.: | EP0667638 | Date: | 30.09.1998 | Language: | EN | [1998/40] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 29.05.1996 | Classification | IPC: | H01L21/20, H01L21/306, C30B25/14 | [1996/28] | CPC: |
C30B25/02 (EP,US);
C30B29/40 (EP,US);
C30B29/42 (EP,US);
H01L21/02543 (EP,US);
H01L21/02546 (EP,US);
H01L21/0262 (EP,US);
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| Former IPC [1995/33] | H01L21/205 | Designated contracting states | DE, FR, GB, IT [1995/33] | Title | German: | Verfahren zum Ätzen eines Verbundhalbleiters | [1995/33] | English: | Method of etching a compound semiconductor | [1995/33] | French: | Procédé d'attaque d'un semi-conducteur composé | [1995/33] | Examination procedure | 11.12.1996 | Examination requested [1997/09] | 26.02.1997 | Despatch of a communication from the examining division (Time limit: M06) | 29.08.1997 | Reply to a communication from the examining division | 23.12.1997 | Despatch of communication of intention to grant (Approval: Yes) | 20.03.1998 | Communication of intention to grant the patent | 28.05.1998 | Fee for grant paid | 28.05.1998 | Fee for publishing/printing paid | Opposition(s) | 01.07.1999 | No opposition filed within time limit [1999/38] | Fees paid | Renewal fee | 14.02.1997 | Renewal fee patent year 03 | 12.02.1998 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 30.09.1998 | IT | 30.09.1998 | [2008/06] |
| Former [2006/14] | FR | 30.09.1998 | |
| Former [1999/36] | FR | 26.02.1999 | Documents cited: | Search | [X]US5112439 (REISMAN ARNOLD [US], et al) [X] 1 * column 4, lines 55-65 * * column 7, lines 32-35 * * column 7, line 53 - column 8, line 13 *; | [A]JPS56169331 ; | [A]JPS6134926 ; | [A] - PATENT ABSTRACTS OF JAPAN, (19820410), vol. 006, no. 055, Database accession no. (E - 101), & JP56169331 A 19811226 (NEC CORP) [A] 1,3,4 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19860628), vol. 010, no. 186, Database accession no. (E - 416), & JP61034926 A 19860219 (RES DEV CORP OF JAPAN;OTHERS: 03) [A] 1,3,4 * abstract * | [A] - TSANG W T, "SELECTIVE-AREA EPITAXY AND ETCHING BY CHEMICAL BEAM EPITAXY", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (19930601), vol. 8, no. 6, pages 1016 - 1022, XP000399842 [A] 1,3,4 * abstract * DOI: http://dx.doi.org/10.1088/0268-1242/8/6/008 |