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EP0734073
European procedure
Extract from the Register of European Patents
EP About this file: EP0734073
| EP0734073 - Bipolar transistor and method for forming the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 22.08.2003 Database last updated on 08.06.2024 | Most recent event Tooltip | 26.06.2009 | Change - representative | published on 29.07.2009 [2009/31] | Applicant(s) | For all designated states Texas Instruments Incorporated 13500 North Central Expressway Dallas, Texas 75265 / US | [N/P] |
| Former [1996/39] | For all designated states TEXAS INSTRUMENTS INCORPORATED 13500 North Central Expressway Dallas Texas 75265 / US | Inventor(s) | 01 /
Johnson, Scott F. P.O. Box 743484 Dallas, TX 75374 / US | [1996/39] | Representative(s) | Degwert, Hartmut, et al Prinz & Partner Rundfunkplatz 2 80335 München / DE | [N/P] |
| Former [2009/31] | Degwert, Hartmut, et al Prinz & Partner GbR Rundfunkplatz 2 80335 München / DE | ||
| Former [2003/12] | Degwert, Hartmut, Dipl.-Phys., et al Prinz & Partner GbR, Manzingerweg 7 81241 München / DE | ||
| Former [1996/39] | Schwepfinger, Karl-Heinz, Dipl.-Ing. Prinz & Partner, Manzingerweg 7 81241 München / DE | Application number, filing date | 96104338.7 | 19.03.1996 | [1996/39] | Priority number, date | US19950409558 | 23.03.1995 Original published format: US 409558 | [1996/39] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0734073 | Date: | 25.09.1996 | Language: | EN | [1996/39] | Type: | A3 Search report | No.: | EP0734073 | Date: | 04.12.1996 | [1996/49] | Type: | B1 Patent specification | No.: | EP0734073 | Date: | 16.10.2002 | Language: | EN | [2002/42] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.10.1996 | Classification | IPC: | H01L29/732, H01L21/331 | [1996/39] | CPC: |
H01L29/66272 (EP,US);
H01L29/73 (KR)
| Designated contracting states | DE, FR, GB, IT, NL [1996/39] | Title | German: | Bipolartransistor und Verfahren zur Herstellung | [1996/39] | English: | Bipolar transistor and method for forming the same | [1996/39] | French: | Transistor bipolaire et procédé de fabrication | [1996/39] | Examination procedure | 04.06.1997 | Examination requested [1997/32] | 06.08.2001 | Despatch of a communication from the examining division (Time limit: M04) | 14.12.2001 | Reply to a communication from the examining division | 27.02.2002 | Despatch of communication of intention to grant (Approval: No) | 16.04.2002 | Despatch of communication of intention to grant (Approval: later approval) | 03.05.2002 | Communication of intention to grant the patent | 06.08.2002 | Fee for grant paid | 06.08.2002 | Fee for publishing/printing paid | Opposition(s) | 17.07.2003 | No opposition filed within time limit [2003/41] | Fees paid | Renewal fee | 25.03.1998 | Renewal fee patent year 03 | 29.03.1999 | Renewal fee patent year 04 | 30.03.2000 | Renewal fee patent year 05 | 27.03.2001 | Renewal fee patent year 06 | 25.03.2002 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | IT | 16.10.2002 | NL | 16.10.2002 | [2008/06] |
| Former [2003/30] | NL | 16.10.2002 | Documents cited: | Search | [X]US4892837 (KUDO SATOSHI [JP]) [X] 1,3,4,8,10,13-15 * column W *; | [X]EP0606001 (NEC CORP [JP]) [X] 1,3,4,8,10,13-15 * column W *; | [X]JPS62183558 ; | [A]US4460417 (MURASE KATSUMI [JP], et al) [A] 1-3,10,11 * column W *; | [A]US5242847 (OZTURK MEHMET C [US], et al) [A] 2,11 * column W *; | [A]EP0189136 (TOSHIBA KK [JP]) [A] 1 * column W * | [X] - PATENT ABSTRACTS OF JAPAN, (19880126), vol. 12, no. 26, Database accession no. (E - 577), & JP62183558 A 19870811 (FUJITSU LTD) [X] 1,10 * abstract * |