-
EP0733725
European procedure
Extract from the Register of European Patents
EP About this file: EP0733725
| EP0733725 - Growth of silicon single crystal [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 01.12.2000 Database last updated on 09.09.2024 | Most recent event Tooltip | 01.12.2000 | No opposition filed within time limit | published on 17.01.2001 [2001/03] | Applicant(s) | For all designated states Research Development Corporation of Japan 4-1-8, Hon-cho Kawaguchi-shi Saitama-ken 332 / JP | For all designated states TOSHIBA CERAMICS CO., LTD. 26-2, Nishi-shinjuku 1-chome Shinjuku-ku Tokyo / JP | For all designated states SUMITOMO METAL INDUSTRIES, LTD. 5-33 Kitahama 4-chome, Chuo-ku Osaka / JP | For all designated states KOMATSU ELECTRONIC METALS CO., LTD 2612, Shinomiya Hiratsuka-shi Kangawa 254-0014 / JP | For all designated states Nippon Steel Corporation 6-3 Otemachi 2-chome Chiyoda-ku Tokyo 100-71 / JP | [N/P] |
| Former [2000/06] | For all designated states RESEARCH DEVELOPMENT CORPORATION OF JAPAN 4-1-8, Hon-cho Kawaguchi-shi, Saitama-ken 332 / JP | ||
| For all designated states TOSHIBA CERAMICS CO., LTD. 26-2, Nishi-shinjuku 1-chome Shinjuku-ku Tokyo / JP | |||
| For all designated states SUMITOMO METAL INDUSTRIES, LTD. 5-33 Kitahama 4-chome, Chuo-ku Osaka / JP | |||
| For all designated states KOMATSU ELECTRONIC METALS CO., LTD 2612, Shinomiya Hiratsuka-shi Kangawa 254 / JP | |||
| For all designated states NIPPON STEEL CORPORATION 6-3 Otemachi 2-chome Chiyoda-ku Tokyo 100-71 / JP | |||
| Former [1999/40] | For all designated states RESEARCH DEVELOPMENT CORPORATION OF JAPAN 4-1-8, Hon-cho Kawaguchi-shi, Saitama-ken 332 / JP | ||
| For all designated states TOSHIBA CERAMICS CO., LTD. 26-2, Nishi-shinjuku 1-chome Shinjuku-ku Tokyo / JP | |||
| For all designated states SUMITOMO METAL INDUSTRIES, LTD. 5-33 Kitahama 4-chome, Chuo-ku Osaka / JP | |||
| For all designated states KOMATSU ELECTRONIC METALS CO., LTD 2612, Shinomiya Hiratsuka-shi Kangawa 254 / JP | |||
| For all designated states NIPPON STEEL CORPORATION 6-3 Otemachi 2-chome Chiyoda-ku Tokyo 100-71 / JP | |||
| For all designated states MITSUBISHI MATERIALS CORPORATION 5-1, Ohtemachi 1-chome Chiyoda-ku, Tokyo 100 / JP | |||
| Former [1997/02] | For all designated states RESEARCH DEVELOPMENT CORPORATION OF JAPAN 4-1-8, Hon-cho Kawaguchi-shi, Saitama-ken 332 / JP | ||
| For all designated states TOSHIBA CERAMICS CO., LTD. 26-2, Nishi-shinjuku 1-chome Shinjuku-ku Tokyo / JP | |||
| For all designated states SUMITOMO SITIX CORPORATION 1, Higashihama-cho Amagasaki-SHI Hyogo 660 / JP | |||
| For all designated states KOMATSU ELECTRONIC METALS CO., LTD 2612, Shinomiya Hiratsuka-shi Kangawa 254 / JP | |||
| For all designated states NIPPON STEEL CORPORATION 6-3 Otemachi 2-chome Chiyoda-ku Tokyo 100-71 / JP | |||
| For all designated states MITSUBISHI MATERIALS CORPORATION 5-1, Ohtemachi 1-chome Chiyoda-ku, Tokyo 100 / JP | |||
| Former [1996/39] | For all designated states RESEARCH DEVELOPMENT CORPORATION OF JAPAN 4-1-8, Hon-cho Kawaguchi-shi, Saitama-ken 332 / JP | ||
| For all designated states Izunome, Koji 1770-1-502, Arakawaoki, Ami-machi Inashiki-gun, Ibaragi-ken 300-11 / JP | |||
| For all designated states Kawanishi, Souroku 16-2, Tokadai 1-chome Tsukuba-shi, Ibaraki-ken, 300-26 / JP | |||
| For all designated states Togawa, Shinji 4182-3, Imakashima Tsukuba-shi, Ibaraki-ken, 300-26 / JP | |||
| For all designated states Ikari, Atsushi 12-15, Tokodai 2-chome Tsukuba-shi, Ibaraki-ken, 300-26 / JP | |||
| For all designated states Sasaki, Hitoshi 545, Oonari 1-chome Omiya-shi, Saitama-ken, 331 / JP | Inventor(s) | 01 /
Izunome, Koji 1-502, Arakawaoki 1770, Ami-machi Inashikigun, Ibaraki-ken, 300-11 / JP | 02 /
Kawanishi, Souroku 16-2, Tokodai 1-xhome Tsukuba-shi, Ibaraki-ken, 300-26 / JP | 03 /
Togawa, Shinji 4182-3, Imakashima Tsukuba-shi, Ibaraki-ken, 300-26 / JP | 04 /
Ikari, Atsushi 12-15, Tokodai 2-chome Tsukuba-shi, Ibaraki-ken, 300-26 / JP | 05 /
Sasaki, Hitoshi 545, Oonari 1-chome Omiya-shi, Saitama-ken, 331 / JP | 06 /
Kimura, Shigeyuki 712, Takezono 3-chome Tsukuba-shi, Ibaraki-ken, 305 / JP | [1996/39] | Representative(s) | Müller-Boré & Partner Patentanwälte PartG mbB Friedenheimer Brücke 21 80639 München / DE | [N/P] |
| Former [1996/39] | Müller-Boré & Partner Patentanwälte Grafinger Strasse 2 81671 München / DE | Application number, filing date | 96104453.4 | 20.03.1996 | [1996/39] | Priority number, date | JP19950091432 | 24.03.1995 Original published format: JP 9143295 | [1996/39] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0733725 | Date: | 25.09.1996 | Language: | EN | [1996/39] | Type: | A3 Search report | No.: | EP0733725 | Date: | 07.05.1997 | [1997/19] | Type: | B1 Patent specification | No.: | EP0733725 | Date: | 02.02.2000 | Language: | EN | [2000/05] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.03.1997 | Classification | IPC: | C30B15/14, C30B29/06 | [1997/16] | CPC: |
C30B29/06 (EP,KR,US);
C30B15/00 (EP,US);
C30B15/14 (KR);
Y10S117/901 (EP,US)
|
| Former IPC [1996/39] | C30B15/00, C30B15/20, C30B15/22 | Designated contracting states | DE, GB, IT [1996/39] | Title | German: | Züchtung von Silizium-Einkristall | [1996/39] | English: | Growth of silicon single crystal | [1996/39] | French: | Croissance d'un monocristal de silicium | [1996/39] | Examination procedure | 09.10.1997 | Examination requested [1997/50] | 12.10.1998 | Despatch of a communication from the examining division (Time limit: M04) | 05.02.1999 | Reply to a communication from the examining division | 26.04.1999 | Despatch of communication of intention to grant (Approval: Yes) | 06.08.1999 | Communication of intention to grant the patent | 07.10.1999 | Fee for grant paid | 07.10.1999 | Fee for publishing/printing paid | Opposition(s) | 03.11.2000 | No opposition filed within time limit [2001/03] | Fees paid | Renewal fee | 27.03.1998 | Renewal fee patent year 03 | 23.03.1999 | Renewal fee patent year 04 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4565671 (MATSUTANI KINYA [JP], et al) [A] 1; | [A]US4830703 (MATSUTANI KINYA [JP]) [A] 1; | [A]US4619730 (SUZUKI TOSHIHIKO [JP], et al) [A] 1; | [A] - KOLKER H, "The behaviour of nonrotational striations in silicon", JOURNAL OF CRYSTAL GROWTH, DEC. 1980, NETHERLANDS, ISSN 0022-0248, vol. 50, no. 4, pages 852 - 858, XP000650895 [A] 1 DOI: http://dx.doi.org/10.1016/0022-0248(80)90147-5 |