EP0732733 - HF vapour selective etching method and apparatus [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 28.01.2000 Database last updated on 05.07.2024 | Most recent event Tooltip | 28.01.2000 | Withdrawal of application | published on 15.03.2000 [2000/11] | Applicant(s) | For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP | [N/P] |
Former [1999/48] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | ||
Former [1996/38] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | ||
For all designated states ASM JAPAN K.K. 23-1, Nagayama 6-chome, Tama-shi Tokyo 206 / JP | Inventor(s) | 01 /
Watanabe, Hirohito, c/o Nec Corporation 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | 02 /
Kyogoku, Mitsusuke, c/o ASM Japan K.K. 23-1, Nagayama 6-chome Tama-shi, Tokyo / JP | [1996/38] | Representative(s) | Glawe, Delfs, Moll Partnerschaft mbB von Patent- und Rechtsanwälten Postfach 26 01 62 80058 München / DE | [N/P] |
Former [1996/38] | Glawe, Delfs, Moll & Partner Patentanwälte Postfach 26 01 62 80058 München / DE | Application number, filing date | 96107114.9 | 07.12.1993 | [1996/38] | Priority number, date | JP19920327907 | 08.12.1992 Original published format: JP 32790792 | [1996/38] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0732733 | Date: | 18.09.1996 | Language: | EN | [1996/38] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 29.07.1996 | Classification | IPC: | H01L21/311, H01L21/00 | [1996/38] | CPC: |
H01L21/31116 (EP,US);
H01L21/306 (KR)
| Designated contracting states | DE, FR, GB, IT, NL [1996/38] | Title | German: | Verfahren für die selektive Ätzung mit HF-Dampf und Einrichtung dafür | [1996/38] | English: | HF vapour selective etching method and apparatus | [1996/38] | French: | Appareillage et procédé pour la gravure sélective aux vapeurs de HF | [1996/38] | Examination procedure | 08.08.1996 | Examination requested [1996/41] | 20.11.1996 | Despatch of a communication from the examining division (Time limit: M06) | 30.05.1997 | Reply to a communication from the examining division | 27.07.1998 | Despatch of a communication from the examining division (Time limit: M06) | 03.02.1999 | Reply to a communication from the examining division | 12.01.2000 | Application withdrawn by applicant [2000/11] | Parent application(s) Tooltip | EP93119686.9 / EP0601532 | Fees paid | Renewal fee | 06.05.1996 | Renewal fee patent year 03 | 18.12.1996 | Renewal fee patent year 04 | 22.12.1997 | Renewal fee patent year 05 | 17.12.1998 | Renewal fee patent year 06 | 14.12.1999 | Renewal fee patent year 07 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]JPH04352426 ; | [Y]EP0036061 (MIKROELEKTRONIK ZT FORSCH TECH [DD]) [Y] 5-8 * figure 3 *; | [A]US4421786 (MAHAJAN ROOP L [US], et al) [A] 5 * column A *; | [AD]WO8701508 (FSI CORP [US], et al) [AD] 5* abstract *; | [A]EP0354669 (HASHIMOTO CHEMICAL IND [JP]) [A] 2,4 * column A *; | [XY]EP0421315 (DAINIPPON SCREEN MFG [JP]) [X] 1,3 * column 15, line 14 - column 16, line 55; claims 1,4-7 * [Y] 2; | [A]US5158100 (TANAKA MASATO [JP], et al) [A] 9 * column A *; | [PX]EP0628993 (TEXAS INSTRUMENTS INC [US]) [PX] 1-4 * column A *; | [PX]US5376233 (MAN WONG [US]) [PX] 1-4 * column A *; | [XY] - WONG ET AL, "Characterization of wafer cleaning and oxide etching using vapor-phase Hydrogen Fluoride", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (199106), vol. 138, no. 6, pages 1799 - 1802, XP000208343 [X] 3,4 * table 1 * [Y] 2 | [Y] - DATABASE WPI, 1, Derwent World Patents Index, vol. 93, no. 93, Database accession no. 93-023861, XP002008296 & JPH04352426 A 19921207 (TOKYO ELECTRON SAGAMI) [Y] 5-8 * abstract * |