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Extract from the Register of European Patents

EP About this file: EP0732733

EP0732733 - HF vapour selective etching method and apparatus [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  28.01.2000
Database last updated on 05.07.2024
Most recent event   Tooltip28.01.2000Withdrawal of applicationpublished on 15.03.2000 [2000/11]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [1999/48]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Former [1996/38]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
For all designated states
ASM JAPAN K.K.
23-1, Nagayama 6-chome, Tama-shi
Tokyo 206 / JP
Inventor(s)01 / Watanabe, Hirohito, c/o Nec Corporation
7-1, Shiba 5-chome, Minato-ku
Tokyo / JP
02 / Kyogoku, Mitsusuke, c/o ASM Japan K.K.
23-1, Nagayama 6-chome
Tama-shi, Tokyo / JP
[1996/38]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1996/38]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
80058 München / DE
Application number, filing date96107114.907.12.1993
[1996/38]
Priority number, dateJP1992032790708.12.1992         Original published format: JP 32790792
[1996/38]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0732733
Date:18.09.1996
Language:EN
[1996/38]
Search report(s)(Supplementary) European search report - dispatched on:EP29.07.1996
ClassificationIPC:H01L21/311, H01L21/00
[1996/38]
CPC:
H01L21/31116 (EP,US); H01L21/306 (KR)
Designated contracting statesDE,   FR,   GB,   IT,   NL [1996/38]
TitleGerman:Verfahren für die selektive Ätzung mit HF-Dampf und Einrichtung dafür[1996/38]
English:HF vapour selective etching method and apparatus[1996/38]
French:Appareillage et procédé pour la gravure sélective aux vapeurs de HF[1996/38]
Examination procedure08.08.1996Examination requested  [1996/41]
20.11.1996Despatch of a communication from the examining division (Time limit: M06)
30.05.1997Reply to a communication from the examining division
27.07.1998Despatch of a communication from the examining division (Time limit: M06)
03.02.1999Reply to a communication from the examining division
12.01.2000Application withdrawn by applicant  [2000/11]
Parent application(s)   TooltipEP93119686.9  / EP0601532
Fees paidRenewal fee
06.05.1996Renewal fee patent year 03
18.12.1996Renewal fee patent year 04
22.12.1997Renewal fee patent year 05
17.12.1998Renewal fee patent year 06
14.12.1999Renewal fee patent year 07
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Documents cited:Search[Y]JPH04352426  ;
 [Y]EP0036061  (MIKROELEKTRONIK ZT FORSCH TECH [DD]) [Y] 5-8 * figure 3 *;
 [A]US4421786  (MAHAJAN ROOP L [US], et al) [A] 5 * column A *;
 [AD]WO8701508  (FSI CORP [US], et al) [AD] 5* abstract *;
 [A]EP0354669  (HASHIMOTO CHEMICAL IND [JP]) [A] 2,4 * column A *;
 [XY]EP0421315  (DAINIPPON SCREEN MFG [JP]) [X] 1,3 * column 15, line 14 - column 16, line 55; claims 1,4-7 * [Y] 2;
 [A]US5158100  (TANAKA MASATO [JP], et al) [A] 9 * column A *;
 [PX]EP0628993  (TEXAS INSTRUMENTS INC [US]) [PX] 1-4 * column A *;
 [PX]US5376233  (MAN WONG [US]) [PX] 1-4 * column A *;
 [XY]  - WONG ET AL, "Characterization of wafer cleaning and oxide etching using vapor-phase Hydrogen Fluoride", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (199106), vol. 138, no. 6, pages 1799 - 1802, XP000208343 [X] 3,4 * table 1 * [Y] 2
 [Y]  - DATABASE WPI, 1, Derwent World Patents Index, vol. 93, no. 93, Database accession no. 93-023861, XP002008296 & JPH04352426 A 19921207 (TOKYO ELECTRON SAGAMI) [Y] 5-8 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.