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EP0750353
European procedure
Extract from the Register of European Patents
EP About this file: EP0750353
| EP0750353 - Single electron tunnel device and method for fabricating the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 07.03.2003 Database last updated on 02.09.2024 | Most recent event Tooltip | 17.10.2008 | Change - applicant | published on 19.11.2008 [2008/47] | Applicant(s) | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP | [2008/47] |
| Former [2002/18] | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Ohaza Kadoma Kadoma-shi, Osaka 571-8501 / JP | ||
| Former [1996/52] | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Ohaza Kadoma Kadoma-shi, Osaka 571 / JP | Inventor(s) | 01 /
Kado, Hiroyuki 1-15-34-107, Niitaka, Yodogawa-ku Osaka-shi, Osaka / JP | 02 /
Manabe, Yoshio 2-32-5, Kuraji Katano-shi, Osaka / JP | 03 /
Tohda, Takao 1-650-78, Satsuki-dai Ikoma-shi, Nara-ken / JP | 04 /
Tanahashi, Ichiro 2-3-3, Miyanosaka Hirakata-shi, Osaka / JP | [1996/52] | Representative(s) | Kügele, Bernhard, et al Novagraaf International SA Chemin de l'Echo 3 1213 Onex / CH | [N/P] |
| Former [1996/52] | Kügele, Bernhard, et al NOVAPAT INTERNATIONAL SA, 9, Rue du Valais 1202 Geneve / CH | Application number, filing date | 96110009.6 | 21.06.1996 | [1996/52] | Priority number, date | JP19950157521 | 23.06.1995 Original published format: JP 15752195 | JP19950157522 | 23.06.1995 Original published format: JP 15752295 | [1996/52] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0750353 | Date: | 27.12.1996 | Language: | EN | [1996/52] | Type: | A3 Search report | No.: | EP0750353 | Date: | 02.07.1997 | [1997/27] | Type: | B1 Patent specification | No.: | EP0750353 | Date: | 02.05.2002 | Language: | EN | [2002/18] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.05.1997 | Classification | IPC: | H01L29/86, H01L21/334, H01L49/00 | [1997/21] | CPC: |
B82Y10/00 (EP,US);
H01L29/66439 (EP,US);
H01L29/66969 (EP,US);
H01L29/7613 (EP,US);
H01L29/88 (EP,US)
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| Former IPC [1996/52] | H01L29/86, H01L29/76, H01L21/334, H01L49/00 | Designated contracting states | DE, FR, GB [1996/52] | Title | German: | Einzelelektron-Tunneleffektanordnung und Verfahren zur Herstellung | [1996/52] | English: | Single electron tunnel device and method for fabricating the same | [1996/52] | French: | Dispositif à effet tunnel à électron unique et méthode de fabrication | [1996/52] | Examination procedure | 21.06.1996 | Examination requested [1996/52] | 24.09.1999 | Despatch of a communication from the examining division (Time limit: M04) | 21.01.2000 | Reply to a communication from the examining division | 02.08.2000 | Despatch of a communication from the examining division (Time limit: M04) | 28.11.2000 | Reply to a communication from the examining division | 15.02.2001 | Despatch of a communication from the examining division (Time limit: M04) | 07.06.2001 | Reply to a communication from the examining division | 05.09.2001 | Despatch of communication of intention to grant (Approval: Yes) | 05.11.2001 | Communication of intention to grant the patent | 24.01.2002 | Fee for grant paid | 24.01.2002 | Fee for publishing/printing paid | Opposition(s) | 04.02.2003 | No opposition filed within time limit [2003/17] | Fees paid | Renewal fee | 29.06.1998 | Renewal fee patent year 03 | 11.06.1999 | Renewal fee patent year 04 | 21.06.2000 | Renewal fee patent year 05 | 26.06.2001 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JPH05283759 ; | [X]JPH07106549 ; | [PX]JPH07226522 ; | [X]EP0576263 (HITACHI EUROP LTD [GB]) [X] 1,3-5 * column 3, line 16 - column 5, line 32; figures 1-3 *; | [X] - WANG L ET AL, "Charging effects observed by low-temperature scanning tunnelling microscopy of gold islands", SURFACE SCIENCE, 1 JAN. 1995, NETHERLANDS, ISSN 0039-6028, vol. 322, no. 1-3, pages 325 - 336, XP000645612 [X] 1,3 * the whole document * DOI: http://dx.doi.org/10.1016/0039-6028(95)90041-1 | [X] - PATENT ABSTRACTS OF JAPAN, (19940203), vol. 18, no. 66, Database accession no. (E - 1501), & JP05283759 A 19931029 (FUJI ELECTRIC CO LTD) [X] 1,2,5,8,10,14,22 * abstract * | [X] - PATENT ABSTRACTS OF JAPAN, (19950831), vol. 95, no. 7, & JP07106549 A 19950421 (RES DEV CORP OF JAPAN) [X] 1,2,5,8,10,14,22 * abstract * | [PX] - PATENT ABSTRACTS OF JAPAN, (19951226), vol. 95, no. 11, & JP07226522 A 19950822 (HITACHI LTD) [PX] 1-3,5-8,10,14,19-22 * abstract * | [XP] - KOZO KATAYAMA ET AL, "A NEW FIELD-EFFECT TRANSISTOR BASED ON THE METAL-INSULATOR TRANSISTOR", JOURNAL OF APPLIED PHYSICS, (19960301), vol. 79, no. 5, pages 2542 - 2548, XP000569094 [XP] 1-3,5-8,10,15,19-21 * the whole document * DOI: http://dx.doi.org/10.1063/1.361120 |