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EP0766394
European procedure
Extract from the Register of European Patents
EP About this file: EP0766394
| EP0766394 - Circuit arrangement for controlling a power enhancement MOSFET [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.01.2003 Database last updated on 17.08.2024 | Most recent event Tooltip | 04.01.2008 | Lapse of the patent in a contracting state New state(s): IT | published on 06.02.2008 [2008/06] | Applicant(s) | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81669 München / DE | [2001/36] |
| Former [1997/14] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | Inventor(s) | 01 /
Jenö, Tihanyi, Dr. Ing. Isarweg 13 85551 Kirchheim / DE | [1997/14] | Representative(s) | Bickel, Michael Westphal, Mussgnug & Partner Patentanwälte Herzog-Wilhelm-Strasse 26 80331 München / DE | [N/P] |
| Former [2001/43] | Bickel, Michael Westphal - Mussgnug & Partner Patentanwälte Mozartstrasse 8 80336 München / DE | Application number, filing date | 96113013.5 | 13.08.1996 | [1997/14] | Priority number, date | DE1995135987 | 27.09.1995 Original published format: DE 19535987 | [1997/14] | Filing language | DE | Procedural language | DE | Publication | Type: | A2 Application without search report | No.: | EP0766394 | Date: | 02.04.1997 | Language: | DE | [1997/14] | Type: | A3 Search report | No.: | EP0766394 | Date: | 13.01.1999 | [1999/02] | Type: | B1 Patent specification | No.: | EP0766394 | Date: | 20.03.2002 | Language: | DE | [2002/12] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.11.1998 | Classification | IPC: | H03K17/0412 | [1997/14] | CPC: |
H03K17/063 (EP,US);
H03K17/04123 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1997/14] | Title | German: | Schaltungsanordnung zum Ansteuern eines Leistungs-Enhancement-MOSFET | [1997/14] | English: | Circuit arrangement for controlling a power enhancement MOSFET | [1997/14] | French: | Montage servant à commander un transistor à effet de champ MOS de puissance à enrichissement | [1997/14] | Examination procedure | 05.02.1999 | Examination requested [1999/14] | 13.08.2001 | Despatch of communication of intention to grant (Approval: Yes) | 14.09.2001 | Communication of intention to grant the patent | 14.11.2001 | Fee for grant paid | 14.11.2001 | Fee for publishing/printing paid | Opposition(s) | 23.12.2002 | No opposition filed within time limit [2003/11] | Fees paid | Renewal fee | 19.08.1998 | Renewal fee patent year 03 | 20.08.1999 | Renewal fee patent year 04 | 17.08.2000 | Renewal fee patent year 05 | 23.08.2001 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 20.03.2002 | GB | 20.03.2002 | IT | 20.03.2002 | [2008/06] |
| Former [2006/14] | FR | 20.03.2002 | |
| GB | 20.03.2002 | ||
| Former [2003/01] | GB | 20.03.2002 | Documents cited: | Search | [DA]EP0572706 (SIEMENS AG [DE]) [DA] 1 * column 2, line 13 - column 4, line 4; figure 1; claim 1 *; | [DA]EP0236967 (SIEMENS AG [DE]) [DA] 1 * column 2, line 32 - column 3, line 42; figure 1; claim 1 *; | [A]EP0294887 (PHILIPS ELECTRONICS UK LTD [GB], et al) [A] 1 * column 5, line 31 - column 8, line 32; figure 1 * |