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EP0789388

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EP About this file: EP0789388

EP0789388 - Fabrication method for schottky electrodes onto semiconductor devices [Right-click to bookmark this link]
Former [1997/33]	Structure and fabrication method for schottky and ohmic electrodes onto semiconductor devices
	[2005/06]
Status	No opposition filed within time limit Status updated on 25.08.2006 Database last updated on 30.10.2024
Most recent event Tooltip	25.08.2006	No opposition filed within time limit	published on 27.09.2006 [2006/39]
Applicant(s)	For all designated states AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo / JP
	[N/P]
Former [2005/42]	For all designated states AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo / JP
Former [1997/33]	For all designated states AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo / JP
Inventor(s)	01 / Hara, Shiro 5-528-405, Matsushiro Tsukuba-shi, Ibaraki / JP
	02 / Kajimura, Koji 2-22-28, Higashi Tsukuba-shi, Ibaraki / JP
	03 / Okushi, Hideyo 1-13-30, Sengen Tsukuba-shi, Ibaraki / JP
	04 / Teraji, Tokuyuki 3-19-1, Kasuga Tsukuba-shi, Ibaraki / JP
	[1997/33]
Representative(s)	Beresford, Keith Denis Lewis Beresford Crump LLP 16 High Holborn London WC1V 6BX / GB
	[N/P]
Former [1997/33]	Beresford, Keith Denis Lewis BERESFORD & Co. 2-5 Warwick Court High Holborn London WC1R 5DJ / GB
Application number, filing date	96306139.5	22.08.1996
	[1997/33]
Priority number, date	JP19950216935	25.08.1995 Original published format: JP 21693595
	JP19960068018	25.03.1996 Original published format: JP 6801896
	[1997/33]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0789388
	Date:	13.08.1997
	Language:	EN
	[1997/33]
	Type:	A3 Search report
	No.:	EP0789388
	Date:	16.09.1998
	[1998/38]
	Type:	B1 Patent specification
	No.:	EP0789388
	Date:	19.10.2005
	Language:	EN
	[2005/42]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	29.07.1998
Classification	IPC:	H01L21/285, H01L21/04	[1998/33]
	CPC:	H01L29/1608 (EP); H01L21/28537 (KR); H01L21/0485 (EP); H01L21/0495 (EP); H01L21/28 (EP); H01L29/47 (KR)
	Former IPC [1997/33]	H01L21/285
Designated contracting states	DE, FR, GB [1997/33]
Title	German:	Herstellungsverfahren von Schottky Elektroden auf Halbleitervorrichtungen	[2005/06]
	English:	Fabrication method for schottky electrodes onto semiconductor devices	[2005/06]
	French:	Procédé de fabrication d'électrodes Schottky sur des dispositifs semi-conducteurs	[2005/06]
	Former [1997/33]	Struktur und Herstellungsverfahren von Schottky und ohmschen Elektroden über Halbleitervorrichtungen
	Former [1997/33]	Structure and fabrication method for schottky and ohmic electrodes onto semiconductor devices
	Former [1997/33]	Structure et procédé de fabrication d'électrodes Schottky et ohmiques sur des dispositifs semi-conducteurs
Examination procedure	05.03.1999	Examination requested [1999/19]
	19.04.1999	Amendment by applicant (claims and/or description)
	09.04.2002	Despatch of a communication from the examining division (Time limit: M04)
	19.08.2002	Reply to a communication from the examining division
	28.04.2003	Despatch of a communication from the examining division (Time limit: M06)
	07.11.2003	Reply to a communication from the examining division
	22.03.2005	Communication of intention to grant the patent
	21.07.2005	Fee for grant paid
	21.07.2005	Fee for publishing/printing paid
Opposition(s)	20.07.2006	No opposition filed within time limit [2006/39]
Fees paid	Renewal fee
	20.08.1998	Renewal fee patent year 03
	23.08.1999	Renewal fee patent year 04
	24.08.2000	Renewal fee patent year 05
	23.08.2001	Renewal fee patent year 06
	29.08.2002	Renewal fee patent year 07
	20.08.2003	Renewal fee patent year 08
	19.08.2004	Renewal fee patent year 09
	18.08.2005	Renewal fee patent year 10
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]US4301592 (LIN HUNG CHANG) [X] 1 * column 2, line 63 - column 3, line 32; figures 2,3 *;
		[X]EP0111364 (PHILIPS NV [NL]) [X] 2,7 * abstract *;
		[X]JPH06333892 ;
		[A]US5087322 (LILLIENFELD DAVID [US], et al) [A] 29 * the whole document *;
		[A]EP0452661 (IBM [US]) [A] * the whole document *;
		[A]US4060820 (PUCEL ROBERT A, et al) [A] * the whole document *;
		[X] - S. M. SZE, Physics or Semiconductor Devices, NEW YORK, JOHN WILEY & SONS, (1981), XP002068071 [X] 2,5,7,8,17 * page 245 - page 311 *
		[X] - ADEGBOYEGA G A ET AL, "SCHOTTKY CONTACT BARRIER HEIGHT ENHANCEMENT ON P-TYPE SILICON BY WET CHEMICAL ETCHING", APPLIED PHYSICS A. SOLIDS AND SURFACES, (19890401), vol. A48, no. 4, pages 391 - 395, XP000112320 [X] 20,22 * the whole document * DOI: http://dx.doi.org/10.1007/BF00618904
		[X] - CHANDRIKA NARAYAN, "TUNING OF THE SCHOTTKY BARRIER HEIGHT USING BI-METALLIC LAYERED STRUCTURES", APPLIED PHYSICS LETTERS, (19911111), vol. 59, no. 20, pages 2541 - 2542, XP000330120 [X] 2,5 * the whole document * DOI: http://dx.doi.org/10.1063/1.105946
		[X] - PATENT ABSTRACTS OF JAPAN, (19950428), vol. 095, no. 003, & JP06333892 A 19941202 (FUJI ELECTRIC CORP RES & DEV LTD) [X] 3 * abstract *
		[PX] - TERAJI T ET AL, "Ohmic contacts to n-type 6H-SiC without post-annealing", III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES. SYMPOSIUM, III-NITRIDE, SOC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES. SYMPOSIUM, SAN FRANCISO, CA, USA, 8-12 APRIL 1996, 1996, PITTSBURGH, PA, USA, MATER. RES. SOC, USA, pages 149 - 154, XP002068069 [PX] 1-4,9-14,16-20,22,23,25,27,29 * the whole document *
		[PX] - HARA S ET AL, "Pinning-controlled metal/semiconductor interfaces", THIRD INTERNATIONAL CONFERENCE ON INTELLIGENT MATERIALS. THIRD EUROPEAN CONFERENCE ON SMART STRUCTURES AND MATERIALS, LYON, FRANCE, 3-5 JUNE 1996, ISSN 0277-786X, PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 1996, SPIE-INT. SOC. OPT. ENG, USA, vol. 2779, pages 802 - 806, XP002068070 [PX] 1,2,7 * the whole document * DOI: http://dx.doi.org/10.1117/12.237058
	Examination	US5270252
		- T. Teraji et al., Ti Ohmic contact without post-annealing process to n-type 6H-SiC, Institute of Physics Conference Series, No 142, Chapter 3, Paper presented at Silicon Carbide and Related Materials 1995, Kyoto, Japan, 18-21 September 1995
		- VANDERVORST W ET AL, "Advanced Characterisation: an Indispensable Tool for Understanding Ultra Clean Processing", MICROELECTRONIC ENGINEERING, AMSTERDAM, NL, (19950601), vol. 28, no. 1, pages 27 - 34
		- TUCKER J R ET AL: Nanoscale FETs and STM Lithography, HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1995, PROCEEDINGS, IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN ITHACA, NY, USA, IEEE, US, pages 425-434, 7 August 1995
		- MURARKA S P, "Silicide Thin Films and their Applications in Microelectronics", INTERMETALLICS, GB, (1995), vol. 3, no. 3, pages 173 - 186
		- WATANABE S ET AL, "Homogeneous Hydrogen-terminated Si(111) Surface Formed usng Aqueous HF Soltution and Water", APPLIED PHYSICS LETTERS, NEW YORK, US, (19910916), vol. 59, no. 12, pages 1458 - 1460

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