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Extract from the Register of European Patents

EP About this file: EP0766309

EP0766309 - Field effect transistor which multi-level metallisation related to integrated circuits [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  18.01.2019
Database last updated on 19.07.2024
FormerGrant of patent is intended
Status updated on  16.04.2018
Most recent event   Tooltip18.01.2019Application deemed to be withdrawnpublished on 20.02.2019  [2019/08]
Applicant(s)For all designated states
Texas Instruments Incorporated
13510 North Central Expressway
Dallas, Texas 75243 / US
[N/P]
Former [1997/14]For all designated states
TEXAS INSTRUMENTS INCORPORATED
13510 North Central Expressway
Dallas, Texas 75243 / US
Inventor(s)01 / Efland, Taylor R.
1402 Stoneboro Lane
Richardson, TX 75082 / US
02 / Skelton, Dale J.
3612 Diamondhead
Planto, TX 75075 / US
[1997/14]
Representative(s)Zeller, Andreas, et al
Texas Instruments Deutschland GmbH
Haggertystraße 1
85356 Freising / DE
[N/P]
Former [2013/18]Holt, Michael
Texas Instruments Limited
3rd Floor
401 Grafton Gate
Milton Keynes
MK91AQ / GB
Former [2008/33]Holt, Michael
Texas Instruments Limited European Patents Department 800 Pavilion Drive
Northampton NN4 7YL / GB
Former [1997/14]Holt, Michael
Texas Instruments Limited, Kempton Point, 68 Staines Road West
Sunbury-on-Thames, Middlesex TW16 7AX / GB
Application number, filing date96306187.423.08.1996
[1997/14]
Priority number, dateUS1995000307528.08.1995         Original published format: US 3075
[1997/14]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0766309
Date:02.04.1997
Language:EN
[1997/14]
Type: A3 Search report 
No.:EP0766309
Date:29.04.1998
[1998/18]
Search report(s)(Supplementary) European search report - dispatched on:EP12.03.1998
ClassificationIPC:H01L29/423, H01L29/417
[2018/14]
CPC:
H01L23/4824 (EP); H01L29/1087 (EP); H01L29/41758 (EP);
H01L29/4238 (EP); H01L2924/0002 (EP); H01L2924/3011 (EP)
C-Set:
H01L2924/0002, H01L2924/00 (EP)
Former IPC [1998/18]H01L23/482, H01L29/78, H01L29/417
Former IPC [1997/14]H01L23/482, H01L29/78
Designated contracting statesDE,   FR,   GB,   IT,   NL [1997/14]
TitleGerman:Feldeffekttransistor mit mehrschichtiger Metallisierung und integrierter Schaltung dafür[1997/14]
English:Field effect transistor which multi-level metallisation related to integrated circuits[1997/14]
French:Transistor à effet de champ avec interconnexions multicouches relié aux circuits intégrés[1997/14]
Examination procedure29.10.1998Examination requested  [1998/53]
09.08.2001Despatch of a communication from the examining division (Time limit: M04)
03.04.2002Reply to a communication from the examining division
12.05.2003Despatch of a communication from the examining division (Time limit: M04)
06.01.2004Reply to a communication from the examining division
31.01.2008Despatch of a communication from the examining division (Time limit: M06)
25.11.2008Reply to a communication from the examining division
17.04.2018Communication of intention to grant the patent
27.08.2018Fee for grant paid
27.08.2018Fee for publishing/printing paid
28.08.2018Application deemed to be withdrawn, date of legal effect  [2019/08]
04.10.2018Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2019/08]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  09.08.2001
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the examination report
25.11.2008Request for further processing filed
25.11.2008Full payment received (date of receipt of payment)
06.01.2004Request for further processing filed
06.01.2004Full payment received (date of receipt of payment)
Request granted
17.02.2004Decision despatched
Fees paidRenewal fee
31.08.1998Renewal fee patent year 03
31.08.1999Renewal fee patent year 04
31.08.2000Renewal fee patent year 05
31.08.2001Renewal fee patent year 06
02.09.2002Renewal fee patent year 07
01.09.2003Renewal fee patent year 08
31.08.2004Renewal fee patent year 09
31.08.2005Renewal fee patent year 10
31.08.2006Renewal fee patent year 11
31.08.2007Renewal fee patent year 12
01.09.2008Renewal fee patent year 13
31.08.2009Renewal fee patent year 14
31.08.2010Renewal fee patent year 15
31.08.2011Renewal fee patent year 16
31.08.2012Renewal fee patent year 17
02.09.2013Renewal fee patent year 18
01.09.2014Renewal fee patent year 19
31.08.2015Renewal fee patent year 20
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Documents cited:Search[A]EP0624909  (SILICONIX INC [US]) [A] 1,2,4,7,10,17,18,20,26 * abstract *;
 [A]US4636825  (BAYNES MARTIN J [US]) [A] 1 * column A; figure . *;
 [PA]EP0720225  (SILICONIX INC [US]) [PA] 1-40 * the whole document *;
 [PA]EP0724293  (MOTOROLA INC [US]) [PA] 1-16 * the whole document *;
 [PA]DE19541497  (FUJI ELECTRIC CO LTD [JP]) [PA] 1-16 * the whole document *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.