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Extract from the Register of European Patents

EP About this file: EP0743675

EP0743675 - Isolation process by deposition of viscous oxide in narrow cavities and semiconductor device [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  18.02.2000
Database last updated on 07.10.2024
Most recent event   Tooltip18.02.2000Application deemed to be withdrawnpublished on 05.04.2000 [2000/14]
Applicant(s)For all designated states
FRANCE TELECOM
6 Place d'Alleray
75015 Paris / FR
[N/P]
Former [1996/47]For all designated states
FRANCE TELECOM
6, Place d'Alleray
75015 Paris / FR
Inventor(s)01 / Brouquet, Pierre
Cidex 272 D, La Croix des Ayes
38920 Crolles / FR
[1996/47]
Representative(s)Casalonga, Axel
Casalonga & Partners Bayerstrasse 73
80335 München / DE
[N/P]
Former [1996/47]Casalonga, Axel
BUREAU D.A. CASALONGA - JOSSE Morassistrasse 8
80469 München / DE
Application number, filing date96400999.710.05.1996
[1996/47]
Priority number, dateFR1995000571015.05.1995         Original published format: FR 9505710
[1996/47]
Filing languageFR
Procedural languageFR
PublicationType: A1 Application with search report 
No.:EP0743675
Date:20.11.1996
Language:FR
[1996/47]
Search report(s)(Supplementary) European search report - dispatched on:EP04.09.1996
ClassificationIPC:H01L21/312, H01L21/316, H01L21/762
[1996/47]
CPC:
H01L21/02126 (EP,US); H01L21/022 (EP,US); H01L21/02274 (EP,US);
H01L21/3121 (US); H01L21/316 (US); H01L21/76224 (EP,US);
H01L21/02129 (EP); H01L21/02164 (EP,US); H01L21/02216 (EP,US);
H01L21/02282 (EP) (-)
Designated contracting statesDE,   GB [1996/47]
TitleGerman:Verfahren zum Isolieren durch Abscheidung eines viskosen Oxids in schmale Gräten und Halbleiteranordnung[1996/47]
English:Isolation process by deposition of viscous oxide in narrow cavities and semiconductor device[1996/47]
French:Procédé d'isolateur électrique par dépôt d'oxyde à l'état visqueux dans des cavités étroites et dispositif semi-conducteur correspondant[1996/47]
Examination procedure12.05.1997Examination requested  [1997/28]
04.02.1998Despatch of a communication from the examining division (Time limit: M04)
13.03.1998Reply to a communication from the examining division
03.06.1999Despatch of a communication from the examining division (Time limit: M04)
14.10.1999Application deemed to be withdrawn, date of legal effect  [2000/14]
11.11.1999Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2000/14]
Fees paidRenewal fee
21.04.1998Renewal fee patent year 03
27.05.1999Renewal fee patent year 04
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XY]EP0519079  (FUJITSU LTD [JP], et al) [X] 1-5 * figures 1,5; claim - * * idem * [Y] 1-6;
 [Y]EP0540277  (SGS THOMSON MICROELECTRONICS [US]) [Y] 6 * column 2, line 52 - line 55; claim 1 *;
 [Y]WO9401885  (DOBSON CHRISTOPHER DAVID [GB]) [Y] 1-5 * figure 3 *;
 [PA]WO9531823  (ELECTROTECH EQUIPMENTS LTD [GB], et al) [PA] 1-6* abstract *;
 [Y]  - SMOLINSKY ET AL, "Material properties of spin-on silicon oxide (SOX) for fully recessed NMOS field isolation", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (199001), vol. 137, no. 1, pages 229 - 234, XP000133070 [Y] 6 * abstract *
 [AD]  - DOBSON ET AL, "Advanced SiO2 planarization using silane and H2O2", SEMICONDUCTOR INTERNATIONAL, USA, (199412), vol. 17, no. 14, pages 85 - 88, XP002010758 [AD] 1-6 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.