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Extract from the Register of European Patents

EP About this file: EP0823735

EP0823735 - MOS-technology power device [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  01.04.1999
Database last updated on 22.05.2024
Most recent event   Tooltip01.04.1999Application deemed to be withdrawnpublished on 19.05.1999 [1999/20]
Applicant(s)For all designated states
STMicroelectronics S.A.
21, Avenue Peynier
90 Rousset / FR
[1999/05]
Former [1998/07]For all designated states
SGS-THOMSON MICROELECTRONICS S.A.
21, Avenue Peynier
90 Rousset / FR
Inventor(s)01 / Mille, Jacques
Résidence Ste Victoire - Bat B, Avenue de Craponne
13100 Aix-en-Provence / FR
[1998/07]
Representative(s)Mittler, Enrico
Mittler & C. S.r.l.
Viale Lombardia, 20
20131 Milano / IT
[N/P]
Former [1998/07]Mittler, Enrico
c/o Mittler & C. s.r.l., Viale Lombardia, 20
20131 Milano / IT
Application number, filing date96410087.905.08.1996
[1998/07]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0823735
Date:11.02.1998
Language:EN
[1998/07]
Search report(s)(Supplementary) European search report - dispatched on:EP19.12.1996
ClassificationIPC:H01L29/06, H01L29/78, H01L29/739
[1998/07]
CPC:
H01L29/7802 (EP,US); H01L29/0696 (EP); H01L29/4238 (EP)
Designated contracting statesDE,   FR,   GB,   IT [1998/43]
Former [1998/07]AT,  BE,  CH,  DE,  DK,  ES,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:MOS-Technologie-Leistungsanordnung[1998/07]
English:MOS-technology power device[1998/07]
French:Dispositif de puissance en technologie MOS[1998/07]
Examination procedure12.08.1998Application deemed to be withdrawn, date of legal effect  [1999/20]
04.12.1998Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [1999/20]
Fees paidPenalty fee
Penalty fee Rule 85b EPC 1973
21.09.1998M01   Not yet paid
Additional fee for renewal fee
31.08.199803   M06   Not yet paid
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Documents cited:Search[Y]FR2515429  (INTERSIL INC) [Y] 1-8,10 * the whole document *;
 [Y]US4833513  (SASAKI YOSHITAKA) [Y] 1-8,10 * column A; figure 4 *;
 [A]US5396097  (ROBB STEPHEN P ET AL) [A] 1 * column A; figure 1 *;
 [A]JPH01207976  ;
 [A]US5521410  (YAMAMOTO MASANORI) [A] 1,3,4 * column A; figures 7,11 *;
 [A]US5399892  (NEILSON JOHN M S ET AL) [A] 1,3,4,6-10 * column A; figure 9 *
 [X]  - BLANCHARD R A, Zukünftige Entwicklungen bei MOS-Leistungstransistoren, ISSN 0013-5658, ELEKTRONIK, 4 JUNE 1982, WEST GERMANY, VOL. 31, NR. 11, PAGE(S) 95 - 98, XP002019981 [X] 1-3 * page 96, column 2, paragraph 1; figure 2A *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19891116), vol. 013, no. 513, Database accession no. (E - 847), & JP01207976 A 19890821 (NEC CORP) [A] 1-4 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.