EP0823735 - MOS-technology power device [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 01.04.1999 Database last updated on 22.05.2024 | Most recent event Tooltip | 01.04.1999 | Application deemed to be withdrawn | published on 19.05.1999 [1999/20] | Applicant(s) | For all designated states STMicroelectronics S.A. 21, Avenue Peynier 90 Rousset / FR | [1999/05] |
Former [1998/07] | For all designated states SGS-THOMSON MICROELECTRONICS S.A. 21, Avenue Peynier 90 Rousset / FR | Inventor(s) | 01 /
Mille, Jacques Résidence Ste Victoire - Bat B, Avenue de Craponne 13100 Aix-en-Provence / FR | [1998/07] | Representative(s) | Mittler, Enrico Mittler & C. S.r.l. Viale Lombardia, 20 20131 Milano / IT | [N/P] |
Former [1998/07] | Mittler, Enrico c/o Mittler & C. s.r.l., Viale Lombardia, 20 20131 Milano / IT | Application number, filing date | 96410087.9 | 05.08.1996 | [1998/07] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0823735 | Date: | 11.02.1998 | Language: | EN | [1998/07] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.12.1996 | Classification | IPC: | H01L29/06, H01L29/78, H01L29/739 | [1998/07] | CPC: |
H01L29/7802 (EP,US);
H01L29/0696 (EP);
H01L29/4238 (EP)
| Designated contracting states | DE, FR, GB, IT [1998/43] |
Former [1998/07] | AT, BE, CH, DE, DK, ES, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | MOS-Technologie-Leistungsanordnung | [1998/07] | English: | MOS-technology power device | [1998/07] | French: | Dispositif de puissance en technologie MOS | [1998/07] | Examination procedure | 12.08.1998 | Application deemed to be withdrawn, date of legal effect [1999/20] | 04.12.1998 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [1999/20] | Fees paid | Penalty fee | Penalty fee Rule 85b EPC 1973 | 21.09.1998 | M01   Not yet paid | Additional fee for renewal fee | 31.08.1998 | 03   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]FR2515429 (INTERSIL INC) [Y] 1-8,10 * the whole document *; | [Y]US4833513 (SASAKI YOSHITAKA) [Y] 1-8,10 * column A; figure 4 *; | [A]US5396097 (ROBB STEPHEN P ET AL) [A] 1 * column A; figure 1 *; | [A]JPH01207976 ; | [A]US5521410 (YAMAMOTO MASANORI) [A] 1,3,4 * column A; figures 7,11 *; | [A]US5399892 (NEILSON JOHN M S ET AL) [A] 1,3,4,6-10 * column A; figure 9 * | [X] - BLANCHARD R A, Zukünftige Entwicklungen bei MOS-Leistungstransistoren, ISSN 0013-5658, ELEKTRONIK, 4 JUNE 1982, WEST GERMANY, VOL. 31, NR. 11, PAGE(S) 95 - 98, XP002019981 [X] 1-3 * page 96, column 2, paragraph 1; figure 2A * | [A] - PATENT ABSTRACTS OF JAPAN, (19891116), vol. 013, no. 513, Database accession no. (E - 847), & JP01207976 A 19890821 (NEC CORP) [A] 1-4 * abstract * |