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Extract from the Register of European Patents

EP About this file: EP0847593

EP0847593 - METHOD OF PRODUCING AN EEPROM SEMICONDUCTOR STRUCTURE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  18.10.2002
Database last updated on 19.10.2024
Most recent event   Tooltip11.01.2003Lapse of the patent in a contracting statepublished on 26.02.2003  [2003/09]
Applicant(s)For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
[2001/50]
Former [2000/49]For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81541 München / DE
Former [1998/25]For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
80333 München / DE
Inventor(s)01 / TEMPEL, Georg
Flaschenträgerstrasse 17
D-81927 München / DE
[1998/25]
Representative(s)Fischer, Volker, et al
Epping Hermann Fischer
Patentanwaltsgesellschaft mbH
Schloßschmidstraße 5
80639 München / DE
[N/P]
Former [2001/03]Fischer, Volker, Dipl.-Ing., et al
Epping Hermann & Fischer Ridlerstrasse 55
80339 München / DE
Former [2000/49]Zedlitz, Peter, Dipl.-Inf.
Patentanwalt, Postfach 22 13 17
80503 München / DE
Application number, filing date96931749.413.08.1996
[1998/25]
WO1996DE01505
Priority number, dateDE199513162928.08.1995         Original published format: DE 19531629
[1998/25]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO9708747
Date:06.03.1997
Language:DE
[1997/11]
Type: A1 Application with search report 
No.:EP0847593
Date:17.06.1998
Language:DE
The application published by WIPO in one of the EPO official languages on 06.03.1997 takes the place of the publication of the European patent application.
[1998/25]
Type: B1 Patent specification 
No.:EP0847593
Date:12.12.2001
Language:DE
[2001/50]
Search report(s)International search report - published on:EP06.03.1997
ClassificationIPC:H01L21/822, H01L21/8247, H01L27/06
[1998/25]
CPC:
H10B41/40 (EP,KR,US); H10B41/41 (EP,US)
Designated contracting statesAT,   DE,   FR,   IT,   NL [1998/25]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINER EEPROM-HALBLEITERSTRUKTUR[1998/25]
English:METHOD OF PRODUCING AN EEPROM SEMICONDUCTOR STRUCTURE[1998/25]
French:PROCEDE POUR PRODUIRE UNE STRUCTURE SEMI-CONDUCTRICE EEPROM[1998/25]
Entry into regional phase20.02.1998National basic fee paid 
20.02.1998Designation fee(s) paid 
20.02.1998Examination fee paid 
Examination procedure14.02.1997Request for preliminary examination filed
International Preliminary Examining Authority: EP
20.02.1998Examination requested  [1998/25]
02.10.2000Despatch of a communication from the examining division (Time limit: M04)
07.12.2000Reply to a communication from the examining division
02.03.2001Despatch of communication of intention to grant (Approval: Yes)
15.06.2001Communication of intention to grant the patent
20.08.2001Fee for grant paid
20.08.2001Fee for publishing/printing paid
Opposition(s)13.09.2002No opposition filed within time limit [2002/49]
Fees paidRenewal fee
19.08.1998Renewal fee patent year 03
20.08.1999Renewal fee patent year 04
17.08.2000Renewal fee patent year 05
21.08.2001Renewal fee patent year 06
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Lapses during opposition  TooltipNL12.12.2001
[2003/09]
Cited inInternational search[A]EP0152625  (SONY CORP [JP]);
 [A]US4682402  (YAMAGUCHI YASUTAKA [JP]);
 [A]EP0435534  (SGS THOMSON MICROELECTRONICS [IT])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.