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Extract from the Register of European Patents

EP About this file: EP0793173

EP0793173 - Non-volatile semiconductor storage unit having a correction coding circuit [Right-click to bookmark this link]
Former [1997/36]Non-volatile semicon-ductor storage unit having a correction coding circuit
[2001/22]
StatusNo opposition filed within time limit
Status updated on  13.12.2002
Database last updated on 20.07.2024
Most recent event   Tooltip13.12.2002No opposition filed within time limitpublished on 29.01.2003  [2003/05]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [2002/06]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome, Minato-ku
Tokyo / JP
Former [1997/36]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Yoshinogawa, Kunio
NEC Corporation, 7-1, Shiba 5-chome
Minato-ku, Tokyo / JP
[1997/36]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1997/36]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
80058 München / DE
Application number, filing date97103276.827.02.1997
[1997/36]
Priority number, dateJP1996004104228.02.1996         Original published format: JP 4104296
[1997/36]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0793173
Date:03.09.1997
Language:EN
[1997/36]
Type: A3 Search report 
No.:EP0793173
Date:25.03.1998
[1998/13]
Type: B1 Patent specification 
No.:EP0793173
Date:06.02.2002
Language:EN
[2002/06]
Search report(s)(Supplementary) European search report - dispatched on:EP06.02.1998
ClassificationIPC:G06F11/10, G11C29/00
[1998/12]
CPC:
G06F11/1008 (EP,US)
Former IPC [1997/36]G06F11/10
Designated contracting statesDE,   FR,   IT [1997/36]
TitleGerman:Nichtflüchtige Halbleiterspeichereinheit mit Korrektur-Kodierungsschaltung[1997/36]
English:Non-volatile semiconductor storage unit having a correction coding circuit[2001/22]
French:Dispositif de mémoire non volatile à semi-conducteur avec circuit de codage de correction[1997/36]
Former [1997/36]Non-volatile semicon-ductor storage unit having a correction coding circuit
Examination procedure13.02.1998Examination requested  [1998/16]
28.11.2000Despatch of a communication from the examining division (Time limit: M04)
27.03.2001Reply to a communication from the examining division
07.06.2001Despatch of communication of intention to grant (Approval: Yes)
07.08.2001Communication of intention to grant the patent
07.11.2001Fee for grant paid
07.11.2001Fee for publishing/printing paid
Opposition(s)07.11.2002No opposition filed within time limit [2003/05]
Fees paidRenewal fee
18.02.1999Renewal fee patent year 03
21.02.2000Renewal fee patent year 04
15.02.2001Renewal fee patent year 05
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Documents cited:Search[A]US4726021  (HORIGUCHI MASASHI [JP], et al) [A] 1-6 * column 6, lines 19-57; figure 10 *;
 [A]EP0509485  (NEC CORP [JP]) [A] 1-6* figure 1; claims 1,2 *;
 [A]  - MICHAEL D. QUINN AND DAVID RICHTER, "Dynamic testing of memory arrays which utilize error checking and correction (ECC) logic", DIGEST OF PAPER 1980 TEST CONFERENCE, NEW YORK, (19800911), pages 238 - 253, XP002051961 [A] 1-6 * page 240, column L, lines 12-37 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.