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EP0802394
European procedure
Extract from the Register of European Patents
EP About this file: EP0802394
| EP0802394 - Semiconductor distortion sensors with pn junction, scanning probe microscope [Right-click to bookmark this link] | |||
| Former [1997/43] | Scanning probe microscope, semiconductor distortion sensor for use therein and manufacturing process for manufacture thereof | ||
| [2002/32] | Status | No opposition filed within time limit Status updated on 16.04.2004 Database last updated on 28.03.2026 | Most recent event Tooltip | 16.04.2004 | No opposition filed within time limit | published on 02.06.2004 [2004/23] | Applicant(s) | For all designated states Seiko Instruments Inc. 8 Nakase 1-chome, Mihama-ku Chiba-shi, Chiba 261 / JP | [N/P] |
| Former [1997/43] | For all designated states SEIKO INSTRUMENTS INC. 8 Nakase 1-chome, Mihama-ku Chiba-shi, Chiba 261 / JP | Inventor(s) | 01 /
Takahashi, Hiroshi c/o Seiko Instruments Inc., 8, Nakase 1-chome Mihama-ku, Chiba-shi, Chiba / JP | 02 /
Shirakawabe, Yoshiharu c/o Seiko Instruments Inc., 8, Nakase 1-chome Mihama-ku, Chiba-shi, Chiba / JP | 03 /
Shimizu, Nobuhiro c/o Seiko Instruments Inc., 8, Nakase 1-chome Mihama-ku, Chiba-shi, Chiba / JP | [1997/43] | Representative(s) | Rupprecht, Kay, et al Meissner Bolte Patentanwälte Rechtsanwälte Partnerschaft mbB Postfach 86 06 24 81633 München / DE | [N/P] |
| Former [1997/43] | Rupprecht, Kay, Dipl.-Ing., et al Meissner, Bolte & Partner Postfach 86 06 24 81633 München / DE | Application number, filing date | 97106397.9 | 17.04.1997 | [1997/43] | Priority number, date | JP19960097120 | 18.04.1996 Original published format: JP 9712096 | JP19970044372 | 27.02.1997 Original published format: JP 4437297 | [1997/43] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0802394 | Date: | 22.10.1997 | Language: | EN | [1997/43] | Type: | B1 Patent specification | No.: | EP0802394 | Date: | 11.06.2003 | Language: | EN | [2003/24] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.08.1997 | Classification | IPC: | G01B7/34, G01N27/00, G01B7/16 | [1997/43] | CPC: |
G01Q20/04 (EP,US);
B82Y35/00 (US);
G01B7/18 (EP,US);
G01Q60/38 (EP,US);
Y10S977/873 (EP,US)
| Designated contracting states | CH, DE, FR, GB, LI [1997/43] | Title | German: | Halbleiterdehnungssensoren mit pn Übergang, Rastersondenmikroskop | [2002/32] | English: | Semiconductor distortion sensors with pn junction, scanning probe microscope | [2002/32] | French: | Capteurs semi conducteur de tension avec une pn jonction, sonde microscope de balayage | [2002/32] |
| Former [1997/43] | Verfahren zum Herstellen eines Halbleiterdehnungssensors eines Rastersondenmikroskopes und dessen Verwendung | ||
| Former [1997/43] | Scanning probe microscope, semiconductor distortion sensor for use therein and manufacturing process for manufacture thereof | ||
| Former [1997/43] | Procédé de fabrication d'un capteur semi-conducteur de tension ainsi que son utilisation dans une sonde-microscope de balayage | Examination procedure | 15.04.1998 | Examination requested [1998/25] | 04.05.1999 | Despatch of a communication from the examining division (Time limit: M04) | 14.09.1999 | Reply to a communication from the examining division | 03.08.2000 | Despatch of a communication from the examining division (Time limit: M04) | 20.11.2000 | Reply to a communication from the examining division | 19.08.2002 | Communication of intention to grant the patent | 19.12.2002 | Fee for grant paid | 19.12.2002 | Fee for publishing/printing paid | Opposition(s) | 12.03.2004 | No opposition filed within time limit [2004/23] | Fees paid | Renewal fee | 14.04.1999 | Renewal fee patent year 03 | 13.04.2000 | Renewal fee patent year 04 | 12.04.2001 | Renewal fee patent year 05 | 12.04.2002 | Renewal fee patent year 06 | 14.04.2003 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y] FRIEDRICH A P ET AL: "LATERAL BACKWARD DIODES AS STRAIN SENSORS", TECHNICAL DIGEST OF THE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), WASHINGTON, DEC. 10 - 13, 1995, 10 December 1995 (1995-12-10), INSTITUTE OF ELECTRICAL AND ELECTRONIC ENGINEERS, pages 597 - 600, XP000624773 [Y] 6-10 * the whole document * |