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Extract from the Register of European Patents

EP About this file: EP0821475

EP0821475 - Amplifier with neuron MOS transistors [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  05.10.2001
Database last updated on 19.10.2024
Most recent event   Tooltip05.10.2001No opposition filed within time limitpublished on 21.11.2001 [2001/47]
Applicant(s)For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
[N/P]
Former [2000/46]For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81541 München / DE
Former [1998/05]For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
80333 München / DE
Inventor(s)01 / Thewes, Roland
Jägerheimstrasse 7
82194 Gröbenzell / DE
02 / Weber, Werner
Franz-Marc-Strasse 6/3
80637 München / DE
03 / Luck, Andreas
Weidener Strasse 19
81737 München / DE
04 / Wohlrab, Erdmute
Freilassinger Strasse 17
81825 München / DE
05 / Schmitt-Landsiedel, Doris
Ludwig-Thoma-Strasse 4
85521 Ottobrunn / DE
[1998/05]
Representative(s)Zedlitz, Peter
OSRAM GmbH
Intellectual Property IP
Postfach 22 13 17
80503 München / DE
[N/P]
Former [2000/46]Zedlitz, Peter, Dipl.-Inf.
Patentanwalt, Postfach 22 13 17
80503 München / DE
Application number, filing date97111343.604.07.1997
[1998/05]
Priority number, dateDE199613011225.07.1996         Original published format: DE 19630112
[1998/05]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP0821475
Date:28.01.1998
Language:DE
[1998/05]
Type: B1 Patent specification 
No.:EP0821475
Date:29.11.2000
Language:DE
[2000/48]
Search report(s)(Supplementary) European search report - dispatched on:EP19.11.1997
ClassificationIPC:H03F3/16, G06G7/60
[1998/05]
CPC:
H03F1/223 (EP,US); H03F3/16 (EP,US); H03G1/007 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [1998/41]
Former [1998/05]AT,  BE,  CH,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Verstärker mit Neuron-MOS Transistoren[1998/05]
English:Amplifier with neuron MOS transistors[1998/05]
French:Amplificateur à transistor MOS neuronal[1998/05]
Examination procedure20.02.1998Examination requested  [1998/17]
05.04.2000Despatch of communication of intention to grant (Approval: Yes)
25.04.2000Communication of intention to grant the patent
10.05.2000Fee for grant paid
10.05.2000Fee for publishing/printing paid
05.09.2000Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time
Opposition(s)30.08.2001No opposition filed within time limit [2001/47]
Request for further processing for:13.09.2000Request for further processing filed
13.09.2000Full payment received (date of receipt of payment)
Request granted
11.10.2000Decision despatched
Fees paidRenewal fee
20.07.1999Renewal fee patent year 03
17.07.2000Renewal fee patent year 04
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Documents cited:Search[A]EP0011694  (IBM [US]) [A] * abstract *;
 [A]DE2938347  (SIEMENS AG [DE]) [A] 1,6 * page 11, line 1 - line 14; figure 1 *;
 [A]US4935702  (MEAD CARVER A [US], et al) [A] 1 * column 2, line 59 - column 4, line 49; figure 2 *;
 [Y]EP0516847  (SHIBATA TADASHI [JP]) [Y] 1,6 * abstract * * page 11, line 44 - page 12, line 50 *;
 [A]US5184061  (LEE BANG-WAN [KR], et al) [A] 1 * column 3, line 53 - column 4, line 61; figures 4,5 *;
 [A]US5444821  (LI ZHI-JIAN [CN], et al) [A] 1 * column 2, line 55 - column 3, line 66; figure 1 *;
 [Y]WO9531043  (PHILIPS ELECTRONICS NV [NL], et al) [Y] 1,6 * page 3, line 12 - line 24; figures 2,6; claim 4 * * abstract *;
 [YD]  - TADASHI SHIBATA ET AL, "A FUNCTIONAL MOS TRANSISTOR FEATURING GATE-LEVEL WEIGHTED SUM AND THRESHOLD OPERATIONS", IEEE TRANSACTIONS ON ELECTRON DEVICES, (19920601), vol. 39, no. 6, pages 1444 - 1455, XP000271791 [YD] 1,6 * the whole document *

DOI:   http://dx.doi.org/10.1109/16.137325
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.