EP0821475 - Amplifier with neuron MOS transistors [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 05.10.2001 Database last updated on 19.10.2024 | Most recent event Tooltip | 05.10.2001 | No opposition filed within time limit | published on 21.11.2001 [2001/47] | Applicant(s) | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81669 München / DE | [N/P] |
Former [2000/46] | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81541 München / DE | ||
Former [1998/05] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 80333 München / DE | Inventor(s) | 01 /
Thewes, Roland Jägerheimstrasse 7 82194 Gröbenzell / DE | 02 /
Weber, Werner Franz-Marc-Strasse 6/3 80637 München / DE | 03 /
Luck, Andreas Weidener Strasse 19 81737 München / DE | 04 /
Wohlrab, Erdmute Freilassinger Strasse 17 81825 München / DE | 05 /
Schmitt-Landsiedel, Doris Ludwig-Thoma-Strasse 4 85521 Ottobrunn / DE | [1998/05] | Representative(s) | Zedlitz, Peter OSRAM GmbH Intellectual Property IP Postfach 22 13 17 80503 München / DE | [N/P] |
Former [2000/46] | Zedlitz, Peter, Dipl.-Inf. Patentanwalt, Postfach 22 13 17 80503 München / DE | Application number, filing date | 97111343.6 | 04.07.1997 | [1998/05] | Priority number, date | DE1996130112 | 25.07.1996 Original published format: DE 19630112 | [1998/05] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0821475 | Date: | 28.01.1998 | Language: | DE | [1998/05] | Type: | B1 Patent specification | No.: | EP0821475 | Date: | 29.11.2000 | Language: | DE | [2000/48] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.11.1997 | Classification | IPC: | H03F3/16, G06G7/60 | [1998/05] | CPC: |
H03F1/223 (EP,US);
H03F3/16 (EP,US);
H03G1/007 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1998/41] |
Former [1998/05] | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Verstärker mit Neuron-MOS Transistoren | [1998/05] | English: | Amplifier with neuron MOS transistors | [1998/05] | French: | Amplificateur à transistor MOS neuronal | [1998/05] | Examination procedure | 20.02.1998 | Examination requested [1998/17] | 05.04.2000 | Despatch of communication of intention to grant (Approval: Yes) | 25.04.2000 | Communication of intention to grant the patent | 10.05.2000 | Fee for grant paid | 10.05.2000 | Fee for publishing/printing paid | 05.09.2000 | Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time | Opposition(s) | 30.08.2001 | No opposition filed within time limit [2001/47] | Request for further processing for: | 13.09.2000 | Request for further processing filed | 13.09.2000 | Full payment received (date of receipt of payment) Request granted | 11.10.2000 | Decision despatched | Fees paid | Renewal fee | 20.07.1999 | Renewal fee patent year 03 | 17.07.2000 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0011694 (IBM [US]) [A] * abstract *; | [A]DE2938347 (SIEMENS AG [DE]) [A] 1,6 * page 11, line 1 - line 14; figure 1 *; | [A]US4935702 (MEAD CARVER A [US], et al) [A] 1 * column 2, line 59 - column 4, line 49; figure 2 *; | [Y]EP0516847 (SHIBATA TADASHI [JP]) [Y] 1,6 * abstract * * page 11, line 44 - page 12, line 50 *; | [A]US5184061 (LEE BANG-WAN [KR], et al) [A] 1 * column 3, line 53 - column 4, line 61; figures 4,5 *; | [A]US5444821 (LI ZHI-JIAN [CN], et al) [A] 1 * column 2, line 55 - column 3, line 66; figure 1 *; | [Y]WO9531043 (PHILIPS ELECTRONICS NV [NL], et al) [Y] 1,6 * page 3, line 12 - line 24; figures 2,6; claim 4 * * abstract *; | [YD] - TADASHI SHIBATA ET AL, "A FUNCTIONAL MOS TRANSISTOR FEATURING GATE-LEVEL WEIGHTED SUM AND THRESHOLD OPERATIONS", IEEE TRANSACTIONS ON ELECTRON DEVICES, (19920601), vol. 39, no. 6, pages 1444 - 1455, XP000271791 [YD] 1,6 * the whole document * DOI: http://dx.doi.org/10.1109/16.137325 |