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EP About this file: EP0827188

EP0827188 - Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 23.07.2004 Database last updated on 17.05.2024
Most recent event Tooltip	23.07.2004	No opposition filed within time limit	published on 08.09.2004 [2004/37]
Applicant(s)	For all designated states MITSUBISHI GAS CHEMICAL COMPANY, INC. No. 5-2, Marunouchi 2-chome Chiyoda-ku Tokyo / JP
	[N/P]
Former [1998/10]	For all designated states MITSUBISHI GAS CHEMICAL COMPANY, INC. No. 5-2, Marunouchi 2-chome Chiyoda-ku, Tokyo / JP
Inventor(s)	01 / Torii, Yoshimi, c/o Hitachi, Ltd. Semi & Inte. Cir. Div., 20-1 Josuihon-cho 5-chome Kodaira-shi, Tokyo / JP
	02 / Sasabe, Shunji, c/o Hitachi, Ltd. Semi & Inte. Cir. Div., 20-1 Josuihon-cho 5-chome Kodaira-shi, Tokyo / JP
	03 / Kojima, Masayuki, c/o Hitachi, Ltd. Semi & Inte. Cir. Div., 20-1 Josuihon-cho 5-chome Kodaira-shi, Tokyo / JP
	04 / Usuami, Kazuhisa, c/o Hitachi, Ltd. Semi & Inte. Cir. Div., 20-1 Josuihon-cho 5-chome Kodaira-shi, Tokyo / JP
	05 / Tokunaga, Takafumi Device Development Center, of Hitachi, Ltd. 2326, Imai, Ome-shi, Tokyo / JP
	06 / Hara, Kazusato Device Development Center, of Hitachi, Ltd. 2326, Imai, Ome-shi, Tokyo / JP
	07 / Ohira, Yoshikazu Device Development Center, of Hitachi, Ltd. 2326, Imai, Ome-shi, Tokyo / JP
	08 / Matsui, Tsuyoshi, Texas Instruments Japan Ltd. 2350, Kihara, Miho-mura, Inashiki-gun Ibaraki-ken / JP
	09 / Gotoh, Hideto, Texas Instruments Japan Ltd. 2350, Kihara, Miho-mura, Inashiki-gun Ibaraki-ken / JP
	10 / Aoyama, Tetsuo, Mitsubishi Gas Chem. Co. Inc. Niigata Res. Lab., 182, Aza-Shinwari, Tayuhama Niigata-shi, Niigata-ken / JP
	11 / Hasemi, Ryuji, Mitsubishi Gas Chem. Co. Inc. Niigata Res. Lab., 182, Aza-Shinwari, Tayuhama Niigata-shi, Niigata-ken / JP
	12 / Ikeda, Hidetoshi, Mitsubishi Gas Chem. Co. Inc. Niigata Res. Lab., 182, Aza-Shinwari, Tayuhama Niigata-shi, Niigata-ken / JP
	13 / Ishihara, Fukusaburo Mitsubishi Gas Chem. Comp. Ins., Corp. Res. Lab. 22, Wadai, Tsukuba-shi, Ibaraki-ken / JP
	14 / Sotoaka, Ryuji Mitsubishi Gas Chem. Comp. Ins., Corp. Res. Lab. 22, Wadai, Tsukuba-shi, Ibaraki-ken / JP
	[1998/10]
Representative(s)	Gille Hrabal Partnerschaftsgesellschaft mbB Patentanwälte Brucknerstraße 20 40593 Düsseldorf / DE
	[N/P]
Former [1998/10]	Türk, Gille, Hrabal, Leifert Brucknerstrasse 20 40593 Düsseldorf / DE
Application number, filing date	97113056.2	30.07.1997
	[1998/10]
Priority number, date	JP19960211217	09.08.1996 Original published format: JP 21121796
	[1998/10]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0827188
	Date:	04.03.1998
	Language:	EN
	[1998/10]
	Type:	A3 Search report
	No.:	EP0827188
	Date:	19.08.1998
	[1998/34]
	Type:	B1 Patent specification
	No.:	EP0827188
	Date:	17.09.2003
	Language:	EN
	[2003/38]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	06.07.1998
Classification	IPC:	H01L21/306, H01L21/321, H01L21/311, G03F7/42	[1998/16]
	CPC:	G03F7/423 (EP,US); G03F7/425 (EP,US); H01L21/02063 (EP,US); H01L21/02071 (EP,US); H01L21/304 (KR); Y10S438/974 (EP,US)
	Former IPC [1998/10]	H01L21/306, H01L21/321, H01L21/311
Designated contracting states	BE, DE, FR, GB, IT [1999/18]
Former [1998/10]	AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE
Title	German:	Reinigungsflüssigkeit für die Herstellung von Halbleiter-Anordnungen und Verfahren zur Herstellung von Halbleiter-Anordnungen unter Verwendung derselben	[1998/10]
	English:	Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same	[1998/10]
	French:	Liquide de nettoyage pour composants semi-conducteurs et procédé de fabrication de composants semi-conducteurs utilisant ledit liquide de nettoyage	[1998/10]
Examination procedure	02.02.1999	Examination requested [1999/13]
	03.05.2000	Despatch of a communication from the examining division (Time limit: M04)
	02.09.2000	Reply to a communication from the examining division
	27.01.2003	Communication of intention to grant the patent
	06.05.2003	Fee for grant paid
	06.05.2003	Fee for publishing/printing paid
Opposition(s)	18.06.2004	No opposition filed within time limit [2004/37]
Fees paid	Renewal fee
	23.07.1999	Renewal fee patent year 03
	22.07.2000	Renewal fee patent year 04
	17.07.2001	Renewal fee patent year 05
	24.07.2002	Renewal fee patent year 06
	17.07.2003	Renewal fee patent year 07
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]JPS61263921 ;
		[X]US4343677 (KINSBRON ELIEZER, et al) [X] 1,6,7,9-12 * column 5, line 16 - line 56 *;
		[X]US4215005 (MEY JOHN E VANDER [US]) [X] 1,2,4,6,7 * column 3, line 53 - column 6, line 14; table IV *;
		[X]EP0680078 (MITSUBISHI GAS CHEMICAL CO [JP], et al) [X] 1,3,6,7,9,11 * column 3, line 25 - column 4, line 42 *;
		[PX]US5571447 (WARD IRL E [US], et al) [PX] 1,6,7,9-11 * claims 1,2 *;
		[PX]EP0773480 (TOKYO OHKA KOGYO CO LTD [JP]) [PX] 1-4,6,7,9-11 * page 3, line 6 - page 4, line 23 *;
		[A]EP0662705 (MITSUBISHI GAS CHEMICAL CO [JP]) [A] 1-12 * abstract *;
		[A]EP0496229 (RIEDEL DE HAEN AG [DE]) [A] 1-12 * abstract *;
		[A]JPS63114128 ;
		[A]JPH0480297 ;
		[A]EP0596515 (BAKER J T INC [US]) [A] 8 * example 1 *
		[X] - PATENT ABSTRACTS OF JAPAN, (19870417), vol. 11, no. 124, Database accession no. (C - 416), & JP61263921 A 19861121 (SUNSTAR INC) [X] 1,5 * abstract *
		[A] - PATENT ABSTRACTS OF JAPAN, (19880926), vol. 12, no. 357, Database accession no. (E - 662), & JP63114128 A 19880519 (SHOWA DENKO) [A] 4 * abstract *
		[A] - PATENT ABSTRACTS OF JAPAN, (19920630), vol. 16, no. 295, Database accession no. (C - 957), & JP04080297 A 19920313 (PIYUARETSUKUSU) [A] 2 * abstract *

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