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EP0825639
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EP About this file: EP0825639
| EP0825639 - Silicon wafer and method of manufacturing the same [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 18.07.2003 Database last updated on 30.03.2026 | Most recent event Tooltip | 18.07.2003 | Application deemed to be withdrawn | published on 03.09.2003 [2003/36] | Applicant(s) | For all designated states SHIN-ETSU HANDOTAI COMPANY LIMITED 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo / JP | [N/P] |
| Former [1998/09] | For all designated states SHIN-ETSU HANDOTAI COMPANY LIMITED 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Takamizawa, Shoichi 205, 250-9 Odakura Aza, Ohira, Nishigo-mura Nishishirakawa-gun, Fukushima-ken / JP | 02 /
Kobayashi, Norihiro 304, 117 Yanase Annaka-shi, Gunma-ken / JP | [1998/09] | Representative(s) | Cooper, John, et al Murgitroyd & Company Scotland House 165-169 Scotland Street Glasgow G5 8PL / GB | [N/P] |
| Former [1998/09] | Cooper, John, et al Murgitroyd & Company, Chartered Patent Agents, 373 Scotland Street Glasgow G5 8QA / GB | Application number, filing date | 97306225.0 | 15.08.1997 | [1998/09] | Priority number, date | JP19960235870 | 19.08.1996 Original published format: JP 23587096 | [1998/09] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0825639 | Date: | 25.02.1998 | Language: | EN | [1998/09] | Type: | A3 Search report | No.: | EP0825639 | Date: | 26.05.1999 | [1999/21] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 13.04.1999 | Classification | IPC: | H01L21/22, H01L21/322, H01L21/314 | [1998/09] | CPC: |
H10P14/6336 (EP,US);
H10P14/69215 (EP,US);
H10P14/6927 (EP,US);
H10P32/15 (EP,US);
H10P36/03 (EP,US);
H10P14/6682 (EP,US);
| Designated contracting states | DE, FR, GB, IT [2000/05] |
| Former [1998/09] | AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Silizium-Wafer und dessen Herstellungsmethode | [1998/09] | English: | Silicon wafer and method of manufacturing the same | [1998/09] | French: | Plaquette de silicium et sa méthode de fabrication | [1998/09] | Examination procedure | 08.10.1999 | Examination requested [1999/49] | 01.03.2003 | Application deemed to be withdrawn, date of legal effect [2003/36] | 04.04.2003 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2003/36] | Fees paid | Renewal fee | 09.09.1999 | Renewal fee patent year 03 | 16.08.2000 | Renewal fee patent year 04 | 14.08.2001 | Renewal fee patent year 05 | Penalty fee | Additional fee for renewal fee | 01.09.1999 | 03 M06 Fee paid on 09.09.1999 | 31.08.2002 | 06 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [DA] JPH042133 | [DA] PATENT ABSTRACTS OF JAPAN vol. 016, no. 142 (E - 1187) 9 April 1992 (1992-04-09) [DA] 1-5 * abstract * |