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Extract from the Register of European Patents

EP About this file: EP0843316

EP0843316 - Non-volatile semiconductor memory device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  15.10.2004
Database last updated on 15.06.2024
Most recent event   Tooltip15.10.2004No opposition filed within time limitpublished on 01.12.2004  [2004/49]
Applicant(s)For all designated states
Sharp Kabushiki Kaisha
22-22 Nagaike-cho
Abeno-ku
Osaka-shi
Osaka-fu 545-0013 / JP
[N/P]
Former [2003/50]For all designated states
SHARP KABUSHIKI KAISHA
22-22 Nagaike-cho, Abeno-ku
Osaka-shi, Osaka-fu 545-0013 / JP
Former [1998/21]For all designated states
SHARP KABUSHIKI KAISHA
22-22 Nagaike-cho, Abeno-ku
Osaka-shi, Osaka-fu 545 / JP
Inventor(s)01 / Nawaki, Masaru
1-90-1-506, Minamikyobate-cho
Nara-shi, Nara-ken / JP
[1998/21]
Representative(s)Brown, Kenneth Richard, et al
R.G.C. Jenkins & Co
26 Caxton Street
London SW1H 0RJ / GB
[N/P]
Former [1998/21]Brown, Kenneth Richard, et al
R.G.C. Jenkins & Co. 26 Caxton Street
London SW1H 0RJ / GB
Application number, filing date97308480.923.10.1997
[1998/21]
Priority number, dateJP1996030226914.11.1996         Original published format: JP 30226996
[1998/21]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0843316
Date:20.05.1998
Language:EN
[1998/21]
Type: A3 Search report 
No.:EP0843316
Date:19.05.1999
[1999/20]
Type: B1 Patent specification 
No.:EP0843316
Date:10.12.2003
Language:EN
[2003/50]
Search report(s)(Supplementary) European search report - dispatched on:EP08.04.1999
ClassificationIPC:G11C16/06, G11C8/00
[1998/21]
CPC:
G11C16/08 (EP,KR,US); G11C16/10 (EP,KR,US); G11C8/14 (EP,KR,US);
G11C8/16 (EP,KR,US); G11C2216/22 (EP,US); G11C2216/24 (EP,US);
G11C8/10 (KR) (-)
Designated contracting statesDE,   FR,   GB [2000/04]
Former [1998/21]AT,  BE,  CH,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Nichtflüchtige Halbleiterspeicheranordnung[1998/21]
English:Non-volatile semiconductor memory device[1998/21]
French:Dispositif de mémoire à semi-conducteurs non volatile[1998/21]
Examination procedure01.10.1999Loss of particular rights, legal effect: designated state(s)
17.11.1999Examination requested  [2000/02]
22.02.2000Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, DK, ES, FI, GR, IE, IT, LI, LU, MC, NL, PT, SE
16.05.2002Despatch of a communication from the examining division (Time limit: M06)
03.12.2002Reply to a communication from the examining division
06.06.2003Communication of intention to grant the patent
13.10.2003Fee for grant paid
13.10.2003Fee for publishing/printing paid
Opposition(s)13.09.2004No opposition filed within time limit [2004/49]
Request for further processing for:03.12.2002Request for further processing filed
03.12.2002Full payment received (date of receipt of payment)
Request granted
16.12.2002Decision despatched
Fees paidRenewal fee
14.10.1999Renewal fee patent year 03
11.10.2000Renewal fee patent year 04
11.10.2001Renewal fee patent year 05
15.10.2002Renewal fee patent year 06
14.10.2003Renewal fee patent year 07
Penalty fee
Penalty fee Rule 85a EPC 1973
15.12.1999AT   M01   Not yet paid
15.12.1999BE   M01   Not yet paid
15.12.1999CH   M01   Not yet paid
15.12.1999DK   M01   Not yet paid
15.12.1999ES   M01   Not yet paid
15.12.1999FI   M01   Not yet paid
15.12.1999GR   M01   Not yet paid
15.12.1999IE   M01   Not yet paid
15.12.1999IT   M01   Not yet paid
15.12.1999LU   M01   Not yet paid
15.12.1999MC   M01   Not yet paid
15.12.1999NL   M01   Not yet paid
15.12.1999PT   M01   Not yet paid
15.12.1999SE   M01   Not yet paid
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Documents cited:Search[XAY]EP0478251  (SGS THOMSON MICROELECTRONICS [US]) [X] 6 * column 2, lines 4-12 * * column 7, lines 25-38; figures 1-3 * * figure 7 * [A] 4 [Y] 1,2;
 [Y]JPH0554682  ;
 [XA]US5448517  (IWAHASHI HIROSHI [JP]) [X] 6 * figure 10 * [A] 1;
 [XA]WO9634391  (INTEL CORP [US]) [X] 6 * figure 4 * [A] 5
 [Y]  - KRUECKEBERG J, "ZWEIGETEILTES EEPROM: GLEICHZEITIG AUSLESEN UND BESCHREIBEN", ELEKTRONIK, (19901221), vol. 39, no. 26, pages 56 - 59, XP000177694 [Y] 1,2 * page 57, column 2, line 13 - page 58, column 1, line 25 *
 [Y]  - PATENT ABSTRACTS OF JAPAN, (19930712), vol. 017, no. 369, Database accession no. (P - 1572), & JP05054682 A 19930305 (MITSUBISHI ELECTRIC CORP) [Y] 1,2 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.