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EP0788202
European procedure
Extract from the Register of European Patents
EP About this file: EP0788202
| EP0788202 - Laser emission component with injection zone of limited width [Right-click to bookmark this link] | |||
| Former [1997/32] | Laser emmission component with injection zone of limited width | ||
| [2000/05] | Status | No opposition filed within time limit Status updated on 02.11.2001 Database last updated on 03.06.2024 | Most recent event Tooltip | 02.11.2001 | No opposition filed within time limit | published on 19.12.2001 [2001/51] | Applicant(s) | For all designated states FRANCE TELECOM 6 Place d'Alleray 75015 Paris / FR | [N/P] |
| Former [1997/32] | For all designated states FRANCE TELECOM 6, Place d'Alleray 75015 Paris / FR | Inventor(s) | 01 /
Nabet, Bernard 87, rue d'Alésia 75014 Paris / FR | 02 /
Bouley, Jean-Claude 35, Avenue du Docteur Durand 94110 Arcueil / FR | 03 /
Bouadma, Nordine 17, rue du Val de Marne 94250 Gentilly / FR | [1997/32] | Representative(s) | Martin, Jean-Jacques, et al Cabinet Régimbeau 20, rue de Chazelles 75847 Paris Cedex 17 / FR | [N/P] |
| Former [1997/32] | Martin, Jean-Jacques, et al Cabinet REGIMBEAU 26, Avenue Kléber 75116 Paris / FR | Application number, filing date | 97400192.7 | 28.01.1997 | [1997/32] | Priority number, date | FR19960001057 | 30.01.1996 Original published format: FR 9601057 | [1997/32] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0788202 | Date: | 06.08.1997 | Language: | FR | [1997/32] | Type: | B1 Patent specification | No.: | EP0788202 | Date: | 27.12.2000 | Language: | FR | [2000/52] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.04.1997 | Classification | IPC: | H01S5/10, H01S5/32 | [2000/05] | CPC: |
B82Y20/00 (EP,US);
H01S5/18341 (EP,US);
H01S5/0207 (EP,US);
H01S5/18308 (EP,US);
H01S5/18311 (EP,US);
H01S5/18369 (EP,US);
H01S5/2063 (EP,US);
H01S5/2211 (EP,US);
H01S5/32391 (EP,US);
|
| Former IPC [1997/32] | H01S3/085, H01S3/19 | Designated contracting states | DE, GB [1997/32] | Title | German: | Bauteil für Laseremission mit einer Injektionszone begrenzter Breite | [1997/32] | English: | Laser emission component with injection zone of limited width | [2000/05] | French: | Composant d'émission laser à zone d'injection de largeur limitée | [1997/32] |
| Former [1997/32] | Laser emmission component with injection zone of limited width | Examination procedure | 12.01.1998 | Examination requested [1998/12] | 25.02.2000 | Despatch of communication of intention to grant (Approval: Yes) | 30.06.2000 | Communication of intention to grant the patent | 25.09.2000 | Fee for grant paid | 25.09.2000 | Fee for publishing/printing paid | Opposition(s) | 28.09.2001 | No opposition filed within time limit [2001/51] | Fees paid | Renewal fee | 18.01.1999 | Renewal fee patent year 03 | 27.01.2000 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US5343487 (SCOTT JEFFERY W [US], et al) [A] 1-15 * column 4, line 53 - column 5, line 58; figures 2,6-10 *; | [PX]US5493577 (CHOQUETTE KENT D [US], et al) [PX] 1* column 6, line 9 - column 9, line 6; figure 1 *; | [A] - ROCHUS S ET AL, "Submilliamp vertical-cavity surface-emitting lasers with buried lateral-current confinement", IEEE PHOTONICS TECHNOLOGY LETTERS, (19950901), vol. 7, no. 9, pages 968 - 970, XP000527492 [A] 1-15 * paragraphes I, II * DOI: http://dx.doi.org/10.1109/68.414671 | [A] - YANG G M ET AL, "Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation", ELECTRONICS LETTERS, (19950525), vol. 31, no. 11, pages 886 - 888, XP000519105 [A] 1,5-7,13-15 * the whole document * DOI: http://dx.doi.org/10.1049/el:19950610 | [A] - TOSHIHIKO BABA ET AL, "A low-threshold 1.3um GaInAsP/InP flat-surface circular buried heterostructure surface emitting laser", JAPANESE JOURNAL OF APPLIED PHYSICS, (19930301), vol. 32, no. 3A, PART 01, page 1126/1127, XP000415017 [A] 1 * the whole document * DOI: http://dx.doi.org/10.1143/JJAP.32.1126 | [DA] - K.IGA, S.UCHIYAMA, "GaInAsP/InP surface emitting laser diode", OPTICAL AND QUANTUM ELECTRONICS, (198611), vol. 18, no. 6, pages 403 - 422, XP000603579 [DA] 1-15 * section 3.2 * DOI: http://dx.doi.org/10.1007/BF02041165 | [DA] - HIROSHI WADA ET AL, "Effects of nonuniform current injection in GaInAsP/InP vertical-cavity lasers", APPLIED PHYSICS LETTERS, (19920615), vol. 60, no. 24, pages 2974 - 2976, XP000269914 [DA] 1 * the whole document * DOI: http://dx.doi.org/10.1063/1.106781 | [A] - CHUA C L ET AL, "Low-threshold 1.57-um VC-SEL's usimg strain-compensated quantum wells and oxide/metal backmirror", IEEE PHOTONICS TECHNOLOGY LETTERS, (19950501), vol. 7, no. 5, pages 444 - 446, XP000506775 [A] 1-15 * the whole document * DOI: http://dx.doi.org/10.1109/68.384504 |