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EP About this file: EP0948818

EP0948818 - HIGH DENSITY TRENCH DMOS TRANSISTOR WITH TRENCH BOTTOM IMPLANT [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 13.11.2009 Database last updated on 05.10.2024
Most recent event Tooltip	11.06.2010	Lapse of the patent in a contracting state New state(s): FR	published on 14.07.2010 [2010/28]
Applicant(s)	For all designated states SILICONIX Incorporated 2201 Laurelwood Road Santa Clara, California 95054 / US
	[2009/02]
Former [1999/41]	For all designated states SILICONIX Incorporated 2201 Laurelwood Road Santa Clara California 95054 / US
Inventor(s)	01 / HSHIEH, Fwu-Iuan 20768 Sevilla Lane Saratoga, CA 95070 / US
	02 / FLOYD, Brian, H. 657 E. McKinley Avenue Sunnyvale, CA 94086 / US
	03 / CHANG, Mike 13095 Montebello Road Cupertino, CA 95014 / US
	04 / NIM, Danny 1561 Orangewood Drive San Jose, CA 95121 / US
	05 / NG, Daniel 3887 Via Montalvo Campbell, CA 95008 / US
	[2009/02]
Former [1999/47]	01 / HSHIEH, Fwu-Iuan 20768 Sevilla Lane Saratoga, CA 95070 / US
	02 / FLOYD, Brian, H. 657 E. McKinley Avenue Sunnyvale, CA 94086 / US
	03 / CHANG, Mike 13095 Montebello Road Cupertino, CA 95014 / US
	04 / NIM, Danny 1561 Orangewood Drive San Jose, CA 95121 / US
	05 / NG, Daniel 3887 Via Montalvo 1238 Campbell, CA 95008 / US
Former [1999/41]	01 / HSHIEH, Fwu-Iuan 20768 Sevilla Lane Saratoga, CA 95070 / US
	02 / FLOYD, Brian, H. 657 E. McKinley Avenue Sunnyvale, CA 94086 / US
	03 / CHANG, Mike 13095 Montebello Road Cupertino, CA 95014 / US
	04 / NIM, Danny 1561 Orangewood Drive San Jose, CA 95121 / US
	05 / NG, Daniel 1035 Aster Avenue 1238 Sunnyvale, CA 94086 / US
Representative(s)	Ebner von Eschenbach, Jennifer Ladas & Parry LLP Dachauerstrasse 37 80335 München / DE
	[N/P]
Former [2003/37]	Ebner von Eschenbach, Jennifer Ladas & Parry, Dachauerstrasse 37 80335 München / DE
Former [2002/35]	Manitz, Finsterwald & Partner Postfach 31 02 20 80102 München / DE
Former [1999/41]	Kolb, Georg, et al Daimler-Benz AG, Postfach 35 35 74025 Heilbronn / DE
Application number, filing date	97934104.7	18.07.1997
	[1999/41]
	WO1997US12046
Priority number, date	US19960684363	19.07.1996 Original published format: US 684363
	[1999/41]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO9804004
	Date:	29.01.1998
	Language:	EN
	[1998/04]
	Type:	A1 Application with search report
	No.:	EP0948818
	Date:	13.10.1999
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 29.01.1998 takes the place of the publication of the European patent application.
	[1999/41]
	Type:	B1 Patent specification
	No.:	EP0948818
	Date:	07.01.2009
	Language:	EN
	[2009/02]
Search report(s)	International search report - published on:	US	29.01.1998
	(Supplementary) European search report - dispatched on:	EP	06.12.1999
Classification	IPC:	H01L21/336, H01L29/78, H01L29/08	[2008/27]
	CPC:	H01L29/7813 (EP,US); H01L29/0878 (EP,US); H01L29/1095 (EP,US)
	Former IPC [2000/03]	H01L29/76, H01L29/78, H01L29/10, H01L21/336
	Former IPC [1999/41]	H01L29/76
Designated contracting states	DE, FR, IT, NL [1999/41]
Title	German:	HOCHDICHTE-GRABEN-DMOS-TRANSISTOR MIT GRABENBODEMIMPLANTIERUNG	[1999/41]
	English:	HIGH DENSITY TRENCH DMOS TRANSISTOR WITH TRENCH BOTTOM IMPLANT	[1999/41]
	French:	TRANSISTOR DMOS POUR TRANCHEES A HAUTE DENSITE A IMPLANT DE FOND DE TRANCHEE	[1999/41]
Entry into regional phase	22.12.1998	National basic fee paid
	22.12.1998	Search fee paid
	22.12.1998	Designation fee(s) paid
	22.12.1998	Examination fee paid
Examination procedure	10.02.1998	Request for preliminary examination filed International Preliminary Examining Authority: US
	22.12.1998	Examination requested [1999/41]
	21.06.2004	Despatch of a communication from the examining division (Time limit: M04)
	25.10.2004	Reply to a communication from the examining division
	02.09.2005	Despatch of a communication from the examining division (Time limit: M04)
	09.11.2005	Reply to a communication from the examining division
	31.07.2008	Communication of intention to grant the patent
	25.11.2008	Fee for grant paid
	25.11.2008	Fee for publishing/printing paid
Divisional application(s)	EP08022385.2 / EP2043158
Opposition(s)	08.10.2009	No opposition filed within time limit [2009/51]
Fees paid	Renewal fee
	06.07.1999	Renewal fee patent year 03
	14.06.2000	Renewal fee patent year 04
	19.06.2001	Renewal fee patent year 05
	24.06.2002	Renewal fee patent year 06
	23.07.2003	Renewal fee patent year 07
	22.07.2004	Renewal fee patent year 08
	20.07.2005	Renewal fee patent year 09
	29.08.2006	Renewal fee patent year 10
	29.08.2007	Renewal fee patent year 11
	25.07.2008	Renewal fee patent year 12
	Penalty fee
	Additional fee for renewal fee
	31.07.2006	10 M06 Fee paid on 29.08.2006
	31.07.2007	11 M06 Fee paid on 29.08.2007
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition Tooltip	NL	07.01.2009
	FR	31.07.2009
	[2010/28]
Former [2009/30]	NL	07.01.2009
Documents cited:	Search	[XY]JPH0621468 ;
		[Y]US5168331 (YILMAZ HAMZA [US]) [Y] 8,11 * column A; figures 1,7 *;
		[PX]JPH08306914 ;
		US5714781 [ ] (YAMAMOTO TSUYOSHI [JP], et al);
		[X]EP0720235 (SILICONIX INC [US]) [X] 1 * column A; figure 12A *;
		[A]US5341011 (HSHIEH FWU-IUAN [US], et al) [A] 1 * column A; figure - *
		[XY] - PATENT ABSTRACTS OF JAPAN, (19940422), vol. 018, no. 225, Database accession no. (E - 1541), & JP06021468 A 19940128 (TOSHIBA CORP) [X] 1-3,8 * abstract * [Y] 8,11
		[PX] - PATENT ABSTRACTS OF JAPAN, (19970331), vol. 1997, no. 03, & JP08306914 A 19961122 (NIPPONDENSO CO LTD) [PX] 1 * abstract *
	International search	[Y]US5442214 (YANG SHENG-HSING [TW]);
		[YP]US5558313 (HSHIEH FWU-IUAN [US], et al);
		[Y]US4893160 (BLANCHARD RICHARD A [US]);
		[Y]US4964080 (TZENG JYH-CHERNG J [US]);
		[Y]JPH05343691 (NIPPON DENSO CO)

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