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Extract from the Register of European Patents

EP About this file: EP0910126

EP0910126 - MOS field effect transistor with an improved lightly doped diffusion region structure and method of forming the same [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  27.05.2005
Database last updated on 27.07.2024
Most recent event   Tooltip27.05.2005Withdrawal of applicationpublished on 13.07.2005  [2005/28]
Applicant(s)For all designated states
NEC Electronics Corporation
1753 Shimonumabe Nakahara-ku
Kawasaki, Kanagawa 211-8668 / JP
[N/P]
Former [2003/18]For all designated states
NEC Electronics Corporation
1753 Shimonumabe, Nakahara-ku
Kawasaki, Kanagawa 211-8668 / JP
Former [1999/16]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Iiboshi, Naoki, c/o NEC Kyushu, Ltd.
Yahatamachi 1-chome
Kumamoto-shi, Kumamoto / JP
[1999/16]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1999/16]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
80058 München / DE
Application number, filing date98113823.323.07.1998
[1999/16]
Priority number, dateJP1997020014025.07.1997         Original published format: JP 20014097
[1999/16]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0910126
Date:21.04.1999
Language:EN
[1999/16]
Type: A3 Search report 
No.:EP0910126
Date:02.06.1999
[1999/22]
Search report(s)(Supplementary) European search report - dispatched on:EP15.04.1999
ClassificationIPC:H01L29/78, H01L21/336
[1999/16]
CPC:
H01L29/6659 (EP,US); H01L29/78 (KR); H01L29/6656 (EP,US);
H01L29/7833 (EP,US)
Designated contracting statesDE,   FR,   GB [2000/07]
Former [1999/16]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:MOS-Feldeffekttransistor mit verbesserter Struktur der leicht dotierten Diffusionsgebiete und entsprechendes Herstellungsverfahren[1999/16]
English:MOS field effect transistor with an improved lightly doped diffusion region structure and method of forming the same[1999/16]
French:Transistor à effet de champ avec une structure améliorée comportant des régions diffusées faiblement dopées et son procédé de fabrication[1999/16]
Examination procedure25.03.1999Examination requested  [1999/21]
08.03.2000Despatch of a communication from the examining division (Time limit: M06)
12.09.2000Reply to a communication from the examining division
20.05.2005Application withdrawn by applicant  [2005/28]
11.10.2005Date of oral proceedings
Fees paidRenewal fee
19.07.2000Renewal fee patent year 03
19.07.2001Renewal fee patent year 04
18.07.2002Renewal fee patent year 05
21.07.2003Renewal fee patent year 06
20.07.2004Renewal fee patent year 07
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XAY]US5472896  (CHEN ANCHOR [TW], et al) [X] 1,2,6,8,10-12,16,18,20-22,26,28-32,36,41,42 * figures 3A-3F,4A-4F * [A] 5,7,15,17,25,27,35,37,38,45,51 [Y] 9,19,39,40,44,46-48,52-54;
 [YA]US5612239  (LIN JENGPING [TW], et al) [Y] 9,19,39,46 * claim 1 * [A] 54;
 [XA]EP0681321  (SIEMENS AG [DE]) [X] 1,3,11,13,21,23,31,33,41,43 * page 3, column 3, line 1 - line 4; figure 4 * [A] 49;
 [XAY]US5439839  (JANG WEN-YUEH [TW]) [X] 1,4,11,14,21,24,31,34 * figure 11; claim 2 * [A] 50 [Y] 44,48,52-54;
 [X]US5512506  (CHANG KUANG-YEH [US], et al) [X] 1,4,11,14,21,24 * figures 10,11 *;
 [Y]EP0762490  (OKI ELECTRIC IND CO LTD [JP]) [Y] 40,47 * page 3, column 4, line 45 - line 48 *;
 [PX]EP0800204  (LUCENT TECHNOLOGIES INC [US]) [PX] 4,14,24 * figures 1C,23D *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.