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EP0903429
European procedure
Extract from the Register of European Patents
EP About this file: EP0903429
| EP0903429 - Process for producing heavily doped silicon [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 12.11.2004 Database last updated on 19.10.2024 | Most recent event Tooltip | 12.11.2004 | No opposition filed within time limit | published on 29.12.2004 [2004/53] | Applicant(s) | For all designated states Japan Science and Technology Corporation 1-8, Hon-cho 4-chome Kawaguchi-shi Saitama-ken 332-0012 / JP | [N/P] |
| Former [2004/02] | For all designated states Japan Science and Technology Corporation 1-8, Hon-cho 4-chome Kawaguchi-shi, Saitama-ken 332-0012 / JP | ||
| Former [1999/12] | For all designated states Japan Science and Technology Corporation 1-8, Hon-cho 4-chome Kawaguchi-shi, Saitama-ken 332 / JP | Inventor(s) | 01 /
Yoshida, Hiroshi 82-4, Daiwa-Higashi 2-chome Kawanishi-shi, Hyogo-ken / JP | [1999/12] | Representative(s) | Müller-Boré & Partner Patentanwälte PartG mbB Friedenheimer Brücke 21 80639 München / DE | [N/P] |
| Former [1999/12] | Müller-Boré & Partner Patentanwälte Grafinger Strasse 2 81671 München / DE | Application number, filing date | 98115709.2 | 20.08.1998 | [1999/12] | Priority number, date | JP19970223304 | 20.08.1997 Original published format: JP 22330497 | [1999/12] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0903429 | Date: | 24.03.1999 | Language: | EN | [1999/12] | Type: | A3 Search report | No.: | EP0903429 | Date: | 09.08.2000 | [2000/32] | Type: | B1 Patent specification | No.: | EP0903429 | Date: | 07.01.2004 | Language: | EN | [2004/02] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.06.2000 | Classification | IPC: | C30B29/06, C30B23/02, C30B15/00, C30B25/02, H01L29/167 | [2000/28] | CPC: |
C30B29/06 (EP,US);
C30B15/04 (EP,US);
C30B23/02 (EP,US);
C30B25/02 (EP,US);
C30B31/00 (EP,US);
H01L29/167 (EP,US)
|
| Former IPC [1999/12] | C30B29/02, C30B23/02 | Designated contracting states | DE, FR, GB [2001/17] |
| Former [1999/12] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Verfahren zur Herstellung von hochdotiertem Silicium | [1999/12] | English: | Process for producing heavily doped silicon | [1999/12] | French: | Procédé de production de silicium fortement dopé | [1999/12] | Examination procedure | 14.09.2000 | Examination requested [2000/45] | 29.04.2002 | Despatch of a communication from the examining division (Time limit: M04) | 02.08.2002 | Reply to a communication from the examining division | 13.03.2003 | Despatch of a communication from the examining division (Time limit: M02) | 06.05.2003 | Reply to a communication from the examining division | 18.07.2003 | Communication of intention to grant the patent | 30.10.2003 | Fee for grant paid | 30.10.2003 | Fee for publishing/printing paid | Opposition(s) | 08.10.2004 | No opposition filed within time limit [2004/53] | Fees paid | Renewal fee | 28.08.2000 | Renewal fee patent year 03 | 29.08.2001 | Renewal fee patent year 04 | 29.08.2002 | Renewal fee patent year 05 | 28.08.2003 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US3485684 (MANN JOHN E, et al); | [A]GB1426511 (HANDOTAI KENKYU SHINKOKAI); | [A]US4631234 (LARRABEE GRAYDON B [US]) [A] 1,2,6 * claims 1,5,6 *; | [A]US5553566 (CHIOU HERING-DER [US], et al) [A] 1,2 * claims 1-5 *; | [X] - HIRAYAMA ET AL., "Stress reduction and doping efficiency in B and Ge doped silicon molecular beam epitaxy films", APPLIED PHYSICS LETTERS., AMERICAN INSTITUTE OF PHYSICS. NEW YORK., US, (19880418), vol. 52, no. 16, ISSN 0003-6951, pages 1335 - 1337, XP000069972 [X] 1,3,6 * page 1335 - page 1336 * DOI: http://dx.doi.org/10.1063/1.99151 | [X] - YEH, "strain compensation in silicon by diffused impurities", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MANCHESTER, NEW HAMPSHIRE US, (196901), vol. 116, no. 1, pages 73 - 77, XP002138100 [X] 1,5,6 * page 74 * | [A] - AKIRA YAMADA ET AL, "HEAVILY P-DOPED ( 1021 CM-3) SILICON FILMS GROWN BY PHOTOCHEMICAL VAPOR DEPOSITION AT A VERY LOW TEMPERATURE OF 250 C", JAPANESE JOURNAL OF APPLIED PHYSICS,JP,PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, (19891201), vol. 28, no. 12, PART 02, ISSN 0021-4922, pages L2284 - 2287, XP000100308 [A] 1,4,5 * page L2284 * |