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EP0905798
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EP About this file: EP0905798
| EP0905798 - Method of manufacturing optical semiconductor device [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 07.10.2005 Database last updated on 28.03.2026 | Most recent event Tooltip | 07.10.2005 | Withdrawal of application | published on 23.11.2005 [2005/47] | Applicant(s) | For all designated states NEC Compound Semiconductor Devices, Ltd. 1753, Shimonumabe, Nakahara-ku Kawasaki, Kanagawa 211-8666 / JP | [N/P] |
| Former [2002/46] | For all designated states NEC Compound Semiconductor Devices, Ltd. 1753, Shimonumabe, Nakahara-ku Kawasaki, Kanagawa 211-8666 / JP | ||
| Former [1999/13] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Sakata, Yasutaka Nec corpration, 7-1,Shiba-5-chome Minato-ku, Tokyo / JP | [1999/13] | Representative(s) | Baronetzky, Klaus, et al Splanemann Patentanwälte Partnerschaft Rumfordstrasse 7 80469 München / DE | [N/P] |
| Former [1999/13] | Baronetzky, Klaus, Dipl.-Ing., et al Patentanwälte Dipl.-Ing. R. Splanemann, Dr. B. Reitzner, Dipl.-Ing. K. Baronetzky Tal 13 80331 München / DE | Application number, filing date | 98118177.9 | 25.09.1998 | [1999/13] | Priority number, date | JP19970266645 | 30.09.1997 Original published format: JP 26664597 | [1999/13] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0905798 | Date: | 31.03.1999 | Language: | EN | [1999/13] | Type: | A3 Search report | No.: | EP0905798 | Date: | 29.03.2000 | [2000/13] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 10.02.2000 | Classification | IPC: | H01L21/20, H01L21/205, C30B25/00, H01L33/00, H01S3/19 | [2000/13] | CPC: |
H01S5/227 (EP,US);
H10H20/013 (EP,KR,US);
H10H20/81 (KR);
H01S2304/04 (EP,US);
H01S5/2272 (EP,US);
H01S5/2277 (EP,US)
|
| Former IPC [1999/13] | H01L33/00, H01S3/19 | Designated contracting states | DE, FR, GB [2000/49] |
| Former [1999/13] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Verfahren zur Herstellung einer optischen Halbleitervorrichtung | [1999/13] | English: | Method of manufacturing optical semiconductor device | [1999/13] | French: | Procédé pour la production d'un dispositif optique à semi-conducteur | [1999/13] | Examination procedure | 28.02.2000 | Examination requested [2000/17] | 07.07.2005 | Despatch of a communication from the examining division (Time limit: M04) | 26.09.2005 | Application withdrawn by applicant [2005/47] | Fees paid | Renewal fee | 29.08.2000 | Renewal fee patent year 03 | 28.08.2001 | Renewal fee patent year 04 | 30.08.2002 | Renewal fee patent year 05 | 02.09.2003 | Renewal fee patent year 06 | 30.08.2004 | Renewal fee patent year 07 | 26.08.2005 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XAY] SAKATA Y ET AL: "High-temperature characteristics for 1.3um strained MQW LDs fabricated by pulse-mode selective MOVPE", CONFERENCE ON INTEGRATED OPTICS AND OPTICAL FIBRE COMMUNICATIONS / EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS, LONDON, UK, 22 September 1997 (1997-09-22) - 25 September 1997 (1997-09-25), pages 99 - 102, XP000874138, ISBN: 0-85296-697-0 [X] 1-4,7-9 * the whole document *[A] 12,13 [Y] 11 |