EP0902482 - SOI-MOSFET and fabrication process thereof [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 23.07.2004 Database last updated on 19.10.2024 | Most recent event Tooltip | 23.07.2004 | No opposition filed within time limit | published on 08.09.2004 [2004/37] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | [N/P] |
Former [2003/38] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho, Abeno-ku Osaka-shi, Osaka 545-8522 / JP | ||
Former [1999/11] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho, Abeno-ku Osaka 545-8522 / JP | Inventor(s) | 01 /
Adan, Alberto O. 1-30, Hikarioka 3-chome Ikoma-shi, Nara 630-0141 / JP | [1999/11] | Representative(s) | Brown, Kenneth Richard, et al R.G.C. Jenkins & Co 26 Caxton Street London SW1H 0RJ / GB | [N/P] |
Former [1999/11] | Brown, Kenneth Richard, et al R.G.C. Jenkins & Co. 26 Caxton Street London SW1H 0RJ / GB | Application number, filing date | 98305138.4 | 29.06.1998 | [1999/11] | Priority number, date | JP19970241482 | 05.09.1997 Original published format: JP 24148297 | [1999/11] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0902482 | Date: | 17.03.1999 | Language: | EN | [1999/11] | Type: | B1 Patent specification | No.: | EP0902482 | Date: | 17.09.2003 | Language: | EN | [2003/38] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.12.1998 | Classification | IPC: | H01L29/786, H01L29/10, H01L21/336, H01L21/265 | [1999/11] | CPC: |
H01L29/66772 (EP,KR,US);
H01L29/78612 (EP,KR,US);
H01L21/26586 (EP,KR,US)
| Designated contracting states | DE, FR, GB, NL [1999/48] |
Former [1999/11] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | SOI-MOSFET und Verfahren zu dessen Herstellung | [1999/11] | English: | SOI-MOSFET and fabrication process thereof | [1999/11] | French: | MOSFET SOI et procédé de fabrication correspondant | [1999/11] | Examination procedure | 02.07.1999 | Examination requested [1999/35] | 18.09.1999 | Loss of particular rights, legal effect: designated state(s) | 27.01.2000 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, GR, IE, IT, LI, LU, MC, PT, SE | 20.03.2000 | Despatch of a communication from the examining division (Time limit: M04) | 24.07.2000 | Reply to a communication from the examining division | 27.02.2002 | Despatch of communication of intention to grant (Approval: No) | 06.05.2002 | Despatch of communication of intention to grant (Approval: later approval) | 22.05.2002 | Communication of intention to grant the patent | 04.09.2002 | Fee for grant paid | 04.09.2002 | Fee for publishing/printing paid | Opposition(s) | 18.06.2004 | No opposition filed within time limit [2004/37] | Request for further processing for: | 04.09.2002 | Request for further processing filed | 04.09.2002 | Full payment received (date of receipt of payment) Request granted | 23.09.2002 | Decision despatched | Fees paid | Renewal fee | 13.06.2000 | Renewal fee patent year 03 | 13.06.2001 | Renewal fee patent year 04 | 12.06.2002 | Renewal fee patent year 05 | 12.06.2003 | Renewal fee patent year 06 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 15.11.1999 | AT   M01   Not yet paid | 15.11.1999 | BE   M01   Not yet paid | 15.11.1999 | CH   M01   Not yet paid | 15.11.1999 | CY   M01   Not yet paid | 15.11.1999 | DK   M01   Not yet paid | 15.11.1999 | ES   M01   Not yet paid | 15.11.1999 | FI   M01   Not yet paid | 15.11.1999 | GR   M01   Not yet paid | 15.11.1999 | IE   M01   Not yet paid | 15.11.1999 | IT   M01   Not yet paid | 15.11.1999 | LU   M01   Not yet paid | 15.11.1999 | MC   M01   Not yet paid | 15.11.1999 | PT   M01   Not yet paid | 15.11.1999 | SE   M01   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY]US5296727 (KAWAI SHINICHI [JP], et al) [X] 1-4,6 * column 6, line 26 - column 7, line 21; figures 5A-5G * [Y] 5,7-11; | [YA]US4965213 (BLAKE TERENCE G W [US]) [Y] 5,8 * column 3, line 4 - column 4, line 7; figures 1,2 * [A] 6; | [YA]US5463237 (FUNAKI MASAKI [JP]) [Y] 7-11 * column 9, line 18 - column 11, line 45; figures 1-7 * * column 12, line 22 - line 61; figures 11,12 * * figure 33 * [A] 1,3,4,6; | [A]JPS5678156 ; | [A]JPH05218425 ; | [DA]JPS62133762 ; | [DA]JPH02178965 | [A] - PATENT ABSTRACTS OF JAPAN, (19810912), vol. 005, no. 145, Database accession no. (E - 074), & JP56078156 A 19810626 (FUJITSU LTD) [A] 1-3 | [A] - PATENT ABSTRACTS OF JAPAN, (19931206), vol. 017, no. 657, Database accession no. (E - 1470), & JP05218425 A 19930827 (NIPPON TELEGR & TELEPH CORP) [A] 1-4,7,9-11 * abstract * | [DA] - PATENT ABSTRACTS OF JAPAN, (19871121), vol. 011, no. 359, Database accession no. (E - 559), & JP62133762 A 19870616 (HITACHI LTD) [DA] 1,2,4,7,9,11 * abstract * | [DA] - PATENT ABSTRACTS OF JAPAN, (19900926), vol. 014, no. 448, Database accession no. (E - 0983), & JP02178965 A 19900711 (NIPPON DENSO CO LTD ET AL) [DA] 1,7 * abstract * |