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Extract from the Register of European Patents

EP About this file: EP0902482

EP0902482 - SOI-MOSFET and fabrication process thereof [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  23.07.2004
Database last updated on 19.10.2024
Most recent event   Tooltip23.07.2004No opposition filed within time limitpublished on 08.09.2004  [2004/37]
Applicant(s)For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho
Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
[N/P]
Former [2003/38]For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho, Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
Former [1999/11]For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho, Abeno-ku
Osaka 545-8522 / JP
Inventor(s)01 / Adan, Alberto O.
1-30, Hikarioka 3-chome
Ikoma-shi, Nara 630-0141 / JP
[1999/11]
Representative(s)Brown, Kenneth Richard, et al
R.G.C. Jenkins & Co
26 Caxton Street
London SW1H 0RJ / GB
[N/P]
Former [1999/11]Brown, Kenneth Richard, et al
R.G.C. Jenkins & Co. 26 Caxton Street
London SW1H 0RJ / GB
Application number, filing date98305138.429.06.1998
[1999/11]
Priority number, dateJP1997024148205.09.1997         Original published format: JP 24148297
[1999/11]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0902482
Date:17.03.1999
Language:EN
[1999/11]
Type: B1 Patent specification 
No.:EP0902482
Date:17.09.2003
Language:EN
[2003/38]
Search report(s)(Supplementary) European search report - dispatched on:EP28.12.1998
ClassificationIPC:H01L29/786, H01L29/10, H01L21/336, H01L21/265
[1999/11]
CPC:
H01L29/66772 (EP,KR,US); H01L29/78612 (EP,KR,US); H01L21/26586 (EP,KR,US)
Designated contracting statesDE,   FR,   GB,   NL [1999/48]
Former [1999/11]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:SOI-MOSFET und Verfahren zu dessen Herstellung[1999/11]
English:SOI-MOSFET and fabrication process thereof[1999/11]
French:MOSFET SOI et procédé de fabrication correspondant[1999/11]
Examination procedure02.07.1999Examination requested  [1999/35]
18.09.1999Loss of particular rights, legal effect: designated state(s)
27.01.2000Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, GR, IE, IT, LI, LU, MC, PT, SE
20.03.2000Despatch of a communication from the examining division (Time limit: M04)
24.07.2000Reply to a communication from the examining division
27.02.2002Despatch of communication of intention to grant (Approval: No)
06.05.2002Despatch of communication of intention to grant (Approval: later approval)
22.05.2002Communication of intention to grant the patent
04.09.2002Fee for grant paid
04.09.2002Fee for publishing/printing paid
Opposition(s)18.06.2004No opposition filed within time limit [2004/37]
Request for further processing for:04.09.2002Request for further processing filed
04.09.2002Full payment received (date of receipt of payment)
Request granted
23.09.2002Decision despatched
Fees paidRenewal fee
13.06.2000Renewal fee patent year 03
13.06.2001Renewal fee patent year 04
12.06.2002Renewal fee patent year 05
12.06.2003Renewal fee patent year 06
Penalty fee
Penalty fee Rule 85a EPC 1973
15.11.1999AT   M01   Not yet paid
15.11.1999BE   M01   Not yet paid
15.11.1999CH   M01   Not yet paid
15.11.1999CY   M01   Not yet paid
15.11.1999DK   M01   Not yet paid
15.11.1999ES   M01   Not yet paid
15.11.1999FI   M01   Not yet paid
15.11.1999GR   M01   Not yet paid
15.11.1999IE   M01   Not yet paid
15.11.1999IT   M01   Not yet paid
15.11.1999LU   M01   Not yet paid
15.11.1999MC   M01   Not yet paid
15.11.1999PT   M01   Not yet paid
15.11.1999SE   M01   Not yet paid
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Documents cited:Search[XY]US5296727  (KAWAI SHINICHI [JP], et al) [X] 1-4,6 * column 6, line 26 - column 7, line 21; figures 5A-5G * [Y] 5,7-11;
 [YA]US4965213  (BLAKE TERENCE G W [US]) [Y] 5,8 * column 3, line 4 - column 4, line 7; figures 1,2 * [A] 6;
 [YA]US5463237  (FUNAKI MASAKI [JP]) [Y] 7-11 * column 9, line 18 - column 11, line 45; figures 1-7 * * column 12, line 22 - line 61; figures 11,12 * * figure 33 * [A] 1,3,4,6;
 [A]JPS5678156  ;
 [A]JPH05218425  ;
 [DA]JPS62133762  ;
 [DA]JPH02178965
 [A]  - PATENT ABSTRACTS OF JAPAN, (19810912), vol. 005, no. 145, Database accession no. (E - 074), & JP56078156 A 19810626 (FUJITSU LTD) [A] 1-3
 [A]  - PATENT ABSTRACTS OF JAPAN, (19931206), vol. 017, no. 657, Database accession no. (E - 1470), & JP05218425 A 19930827 (NIPPON TELEGR & TELEPH CORP) [A] 1-4,7,9-11 * abstract *
 [DA]  - PATENT ABSTRACTS OF JAPAN, (19871121), vol. 011, no. 359, Database accession no. (E - 559), & JP62133762 A 19870616 (HITACHI LTD) [DA] 1,2,4,7,9,11 * abstract *
 [DA]  - PATENT ABSTRACTS OF JAPAN, (19900926), vol. 014, no. 448, Database accession no. (E - 0983), & JP02178965 A 19900711 (NIPPON DENSO CO LTD ET AL) [DA] 1,7 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.