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EP0893820
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EP About this file: EP0893820
| EP0893820 - Anisotropic chemical etching process of silicon oxide in the manufacture of MOS transistor flash EPROM devices [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 22.04.2005 Database last updated on 21.03.2026 | Most recent event Tooltip | 23.11.2007 | Change - applicant | published on 26.12.2007 [2007/52] | Applicant(s) | For:DE
FR
GB
NL
Texas Instruments Incorporated 13500 North Central Expressway Dallas, Texas 75265 / US | For:IT
Consorzio Eagle Via Nobel 13 67051 Avezzano (AQ) / IT | [2007/52] |
| Former [2004/27] | For:DE
FR
GB
NL
AT
BE
CH
CY
DK
ES
FI
GR
IE
LU
MC
PT
SE
LI
TEXAS INSTRUMENTS INCORPORATED 13500 North Central Expressway Dallas Texas 75265 / US | ||
| For:IT
Consorzio Eagle Via Nobel 13 67051 Avezzano (AQ) / IT | |||
| Former [1999/04] | For:BE
CH
DE
DK
ES
FI
FR
GB
GR
IE
IT
LI
LU
MC
NL
AT
TEXAS INSTRUMENTS INCORPORATED 13500 North Central Expressway Dallas Texas 75265 / US | ||
| For all designated states Consorzio Eagle Via Nobel 13 67051 Avezzano (AQ) / IT | Inventor(s) | 01 /
Russo, Felice Via Infante 7 67051 Avezzano / IT | 02 /
Miccoli, Giuseppe 868 Arbor Downs Drive Plano Texas 75023 / US | 03 /
Torsi, Alessandro Via Adolfo Infante 13 Avezzano / IT | 04 /
Chintapalli, Koteswara Rao Via P.NTI Mattarella 4 Avezzano / IT | 05 /
Cautiero, Giuseppe Via Treves 12 Avezzano / IT | [1999/06] | Representative(s) | Darby, David Thomas, et al Abel & Imray, 20 Red Lion Street London WC1R 4PQ / GB | [N/P] |
| Former [1999/04] | Darby, David Thomas, et al Abel & Imray Northumberland House 303-306 High Holborn London WC1V 7LH / GB | Application number, filing date | 98305602.9 | 14.07.1998 | [1999/04] | Priority number, date | IT1997RM00430 | 14.07.1997 Original published format: IT RM970430 | [1999/04] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0893820 | Date: | 27.01.1999 | Language: | EN | [1999/04] | Type: | A3 Search report | No.: | EP0893820 | Date: | 29.10.2003 | [2003/44] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 17.09.2003 | Classification | IPC: | H01L21/311, H01L21/314, H01L21/8247, H01L27/115, H01L21/336 | [2003/43] | CPC: |
H10P50/73 (EP,US);
H10B41/30 (EP,KR,US);
H10P14/662 (EP,US)
|
| Former IPC [1999/04] | H01L21/311, H01L21/314, H01L21/8247 | Designated contracting states | DE, FR, GB, IT, NL [2004/30] |
| Former [1999/04] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Anisotropisches chemisches Ätzverfahren von Siliziumoxid in der Herstellung von MOS Transistor Flash EPROM Anordnungen | [1999/04] | English: | Anisotropic chemical etching process of silicon oxide in the manufacture of MOS transistor flash EPROM devices | [1999/04] | French: | Procédé d'attaque chimique anisotrope d'oxyde de silicium dans la fabrication de dispositifs flash EPROM à transistors MOS | [1999/04] | Examination procedure | 29.04.2004 | Examination requested [2004/27] | 13.07.2004 | Despatch of a communication from the examining division (Time limit: M04) | 24.11.2004 | Application deemed to be withdrawn, date of legal effect [2005/23] | 12.01.2005 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2005/23] | Fees paid | Renewal fee | 12.07.2000 | Renewal fee patent year 03 | 31.01.2002 | Renewal fee patent year 04 | 26.09.2002 | Renewal fee patent year 05 | 31.07.2003 | Renewal fee patent year 06 | 02.08.2004 | Renewal fee patent year 07 | Penalty fee | Additional fee for renewal fee | 31.07.2001 | 04 M06 Fee paid on 31.01.2002 | 31.07.2002 | 05 M06 Fee paid on 26.09.2002 |
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