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EP0936676
European procedure
Extract from the Register of European Patents
EP About this file: EP0936676
| EP0936676 - MOS field effect transistors and its method of fabrication [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 02.12.2011 Database last updated on 21.05.2024 | Most recent event Tooltip | 04.05.2012 | Lapse of the patent in a contracting state New state(s): IT | published on 06.06.2012 [2012/23] | Applicant(s) | For all designated states TEXAS INSTRUMENTS INC. 13500 North Central Expressway Dallas Texas 75243 / US | [2011/04] |
| Former [1999/33] | For all designated states TEXAS INSTRUMENTS INC. 13500 North Central Expressway Dallas, Texas 75243 / US | Inventor(s) | 01 /
Chatterjee, Amitava 3545 Santana Lane Plano, Texas 75023 / US | 02 /
Chapman, Richard A 7240 Briarcove Drive Dallas, Texas 75240 / US | 03 /
Murtaza, Suhail 9944 Walnut Street, Apt. 2085 Dallas, Texas 75243 / US | [1999/33] | Representative(s) | Harris, Ian Richard D Young & Co LLP 120 Holborn London EC1N 2DY / GB | [N/P] |
| Former [1999/33] | Harris, Ian Richard D. Young & Co., 21 New Fetter Lane London EC4A 1DA / GB | Application number, filing date | 98310677.4 | 23.12.1998 | [1999/33] | Priority number, date | US19970070059P | 30.12.1997 Original published format: US 70059 P | [1999/33] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0936676 | Date: | 18.08.1999 | Language: | EN | [1999/33] | Type: | A3 Search report | No.: | EP0936676 | Date: | 15.12.1999 | [1999/50] | Type: | B1 Patent specification | No.: | EP0936676 | Date: | 26.01.2011 | Language: | EN | [2011/04] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.10.1999 | Classification | IPC: | H01L29/78, H01L21/336, H01L29/10, H01L29/423 | [1999/49] | CPC: |
H01L29/42376 (EP,US);
H01L21/28114 (EP,US);
H01L21/76224 (EP,US);
H01L21/823412 (EP,US);
H01L21/82345 (EP,US);
H01L21/823807 (EP,US);
H01L27/092 (EP,US);
H01L29/41783 (EP,US);
H01L29/66545 (EP,US);
H01L29/66575 (EP,US);
H01L29/66628 (EP,US);
H01L29/66651 (EP,US);
H01L29/78 (EP,US)
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| Former IPC [1999/33] | H01L29/78, H01L21/336 | Designated contracting states | DE, FR, GB, IT, NL [2000/34] |
| Former [1999/33] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | MOS-Feldeffekttransistor und Verfahren zur Herstellung | [1999/33] | English: | MOS field effect transistors and its method of fabrication | [1999/33] | French: | Transistor MOS à effet de champ et sa méthode de fabrication | [2010/25] |
| Former [1999/33] | Tansistor à effet de champ et sa méthode de fabrication | Examination procedure | 26.05.2000 | Examination requested [2000/30] | 30.03.2006 | Despatch of a communication from the examining division (Time limit: M06) | 06.10.2006 | Reply to a communication from the examining division | 18.05.2007 | Despatch of a communication from the examining division (Time limit: M06) | 10.01.2008 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 14.03.2008 | Reply to a communication from the examining division | 14.08.2008 | Despatch of a communication from the examining division (Time limit: M04) | 15.12.2008 | Reply to a communication from the examining division | 24.06.2009 | Despatch of a communication from the examining division (Time limit: M04) | 30.09.2009 | Reply to a communication from the examining division | 30.07.2010 | Communication of intention to grant the patent | 25.11.2010 | Fee for grant paid | 25.11.2010 | Fee for publishing/printing paid | Opposition(s) | 27.10.2011 | No opposition filed within time limit [2012/01] | Request for further processing for: | The application is deemed to be withdrawn due to failure to reply to the examination report | 13.03.2008 | Request for further processing filed | 13.03.2008 | Full payment received (date of receipt of payment) Request granted | 10.04.2008 | Decision despatched | Fees paid | Renewal fee | 05.12.2000 | Renewal fee patent year 03 | 10.12.2001 | Renewal fee patent year 04 | 11.12.2002 | Renewal fee patent year 05 | 09.12.2003 | Renewal fee patent year 06 | 23.12.2004 | Renewal fee patent year 07 | 05.12.2005 | Renewal fee patent year 08 | 07.12.2006 | Renewal fee patent year 09 | 10.12.2007 | Renewal fee patent year 10 | 11.12.2008 | Renewal fee patent year 11 | 15.12.2009 | Renewal fee patent year 12 | 17.12.2010 | Renewal fee patent year 13 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | IT | 26.01.2011 | NL | 26.01.2011 | [2012/23] |
| Former [2011/42] | NL | 26.01.2011 | Documents cited: | Search | [Y]US5589410 (SATO NORIAKI [JP], et al) [Y] 1 * column W *; | [Y]JPH0684939 ; | [A]US5376578 (HSU LOUIS L [US], et al) [A] 4 * column A; figures 1-5,8,9 *; | [A]EP0480446 (TEXAS INSTRUMENTS INC [US]) [A] 1 * column 17, line 40 - line 44; figure - *; | [A]US5567966 (HWANG JEONG-MO [US]) [A] 5,7 * column A; figure - * | [X] - MIMURA T ET AL, "New structure of enhancement-mode GaAs microwave m.o.s.f.e.t", ELECTRONICS LETTERS, 3 AUG. 1978, UK, vol. 14, no. 16, ISSN 0013-5194, pages 500 - 502, XP002118596 [X] 8 * page 501, paragraph 1; figure 1 * | [Y] - PATENT ABSTRACTS OF JAPAN, (19940624), vol. 018, no. 336, Database accession no. (E - 1568), & JP06084939 A 19940325 (FUJITSU LTD) [Y] 1 * abstract * |