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EP0971465
European procedure
Extract from the Register of European Patents
EP About this file: EP0971465
| EP0971465 - COMPOUND SEMICONDUCTOR LASER [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 01.04.2005 Database last updated on 03.09.2024 | Most recent event Tooltip | 01.04.2005 | No opposition filed within time limit | published on 18.05.2005 [2005/20] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | [N/P] |
| Former [2004/22] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho, Abeno-ku Osaka-shi, Osaka 545-8522 / JP | ||
| Former [2000/02] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho, Abeno-ku Osaka-shi, Osaka 545-8522 / JP | Inventor(s) | 01 /
TAKATANI, Kunihiro 17-34-205, Hinodehigashihon-cho Yamatotakada-shi, Nara-ken 635-0023 / JP | [2000/02] | Representative(s) | Müller, Frithjof E. Müller Hoffmann & Partner Patentanwälte Innere Wiener Strasse 17 81667 München / DE | [N/P] |
| Former [2000/02] | Müller, Frithjof E., Dipl.-Ing. Patentanwälte MÜLLER & HOFFMANN, Innere Wiener Strasse 17 81667 München / DE | Application number, filing date | 98910983.0 | 25.03.1998 | [2000/02] | WO1998JP01308 | Priority number, date | JP19970074779 | 27.03.1997 Original published format: JP 7477997 | [2000/02] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO9844606 | Date: | 08.10.1998 | Language: | EN | [1998/40] | Type: | A1 Application with search report | No.: | EP0971465 | Date: | 12.01.2000 | Language: | EN | The application published by WIPO in one of the EPO official languages on 08.10.1998 takes the place of the publication of the European patent application. | [2000/02] | Type: | B1 Patent specification | No.: | EP0971465 | Date: | 26.05.2004 | Language: | EN | [2004/22] | Search report(s) | International search report - published on: | JP | 08.10.1998 | (Supplementary) European search report - dispatched on: | EP | 31.07.2000 | Classification | IPC: | H01S5/223, H01S5/323 | [2003/42] | CPC: |
B82Y20/00 (EP,US);
H01S5/30 (KR);
H01S5/32341 (EP,US);
H01S5/2231 (EP,US);
H01S5/2211 (EP,US);
H01S5/2214 (EP,US);
|
| Former IPC [2000/37] | H01S3/18, H01S3/19 | ||
| Former IPC [2000/02] | H01S3/18 | Designated contracting states | DE, FR, GB, NL [2000/02] | Title | German: | VERBINDUNGSHALBLEITERLASER | [2003/42] | English: | COMPOUND SEMICONDUCTOR LASER | [2000/02] | French: | LASER A SEMI-CONDUCTEUR COMPOSE | [2003/42] |
| Former [2000/02] | HOCHLEISTUNGSDICHTES HALBLEITERLASER | ||
| Former [2000/02] | LASER COMBINE A SEMI-CONDUCTEUR | Entry into regional phase | 27.09.1999 | Translation filed | 27.09.1999 | National basic fee paid | 27.09.1999 | Search fee paid | 25.10.1999 | Designation fee(s) paid | 25.10.1999 | Examination fee paid | Examination procedure | 21.10.1998 | Request for preliminary examination filed International Preliminary Examining Authority: JP | 25.10.1999 | Examination requested [2000/03] | 30.11.2000 | Despatch of a communication from the examining division (Time limit: M06) | 31.05.2001 | Reply to a communication from the examining division | 26.03.2002 | Despatch of a communication from the examining division (Time limit: M06) | 26.09.2002 | Reply to a communication from the examining division | 30.10.2003 | Communication of intention to grant the patent | 23.02.2004 | Fee for grant paid | 23.02.2004 | Fee for publishing/printing paid | Divisional application(s) | EP04009210.8 / EP1437809 | EP06023105.7 / EP1744419 | Opposition(s) | 01.03.2005 | No opposition filed within time limit [2005/20] | Fees paid | Renewal fee | 29.03.2000 | Renewal fee patent year 03 | 23.03.2001 | Renewal fee patent year 04 | 26.03.2002 | Renewal fee patent year 05 | 19.03.2003 | Renewal fee patent year 06 | 26.03.2004 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [YA]JPH01184973 ; | [YA]JPH07235723 ; | [YA]JPH0897507 ; | [YA]US4691321 (MOTEGI NAWOTO [JP], et al) [Y] 10 * column 5, line 9 - column 5, line 57 * * column 7, line 34 - column 7, line 33; figures 4-5C * [A] 12; | [YA]US5583880 (SHAKUDA YUKIO [JP]) [Y] 10 * column 4, line 1 - column 4, line 18 * * column 6, line 24 - column 6, line 33; figure 1 * [A] 12; | [YA] - PATENT ABSTRACTS OF JAPAN, (19891024), vol. 013, no. 470, Database accession no. (E - 835), & JP01184973 A 19890724 (TOSHIBA CORP) [Y] 1 * abstract * [A] 2,3,5 | [YA] - PATENT ABSTRACTS OF JAPAN, (19960131), vol. 1996, no. 01, & JP07235723 A 19950905 (HITACHI LTD) [Y] 1 * abstract * [A] 3,4 | [YA] - PATENT ABSTRACTS OF JAPAN, (19960830), vol. 1996, no. 08, & JP08097507 A 19960412 (ROHM CO LTD) [Y] 10 * abstract * [A] 12 | [A] - SHUJI NAKAMURA ET AL, "RIDGE-GEOMETRY INGAN MULTI-QUANTUM-WELL-STRUCTURE LASER DIODES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, (19960902), vol. 69, no. 10, ISSN 0003-6951, pages 1477 - 1479, XP000629154 [A] 1,10,3,12 * the whole document * DOI: http://dx.doi.org/10.1063/1.116913 | International search | [A]JPH053376 (SEIKO EPSON CORP); | [X]JPH0818159 (HITACHI LTD); | [X]JPH0856055 (HITACHI LTD); | [P]JPH09270569 (MATSUSHITA ELECTRIC IND CO LTD); | [A] - NAKAMURA S., ET AL., "INGAN-BASED MULTI-QUANTUM-WELL-STRUCTURE LASER DIODES.", JAPANESE JOURNAL OF APPLIED PHYSICS, Japan Society of Applied Physics, JP, JP, (19960101), vol. 35., no. 01B., doi:10.1143/JJAP.35.L74, ISSN 0021-4922, pages L74 - L76., XP002914418 DOI: http://dx.doi.org/10.1143/JJAP.35.L74 |