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Extract from the Register of European Patents

EP About this file: EP0995227

EP0995227 - A CONTROLLED CLEAVAGE PROCESS [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  10.04.2015
Database last updated on 02.09.2024
Most recent event   Tooltip10.04.2015Application deemed to be withdrawnpublished on 13.05.2015  [2015/20]
Applicant(s)For all designated states
Silicon Genesis Corporation
590 Division Street
Campbell, CA 95008 / US
[2000/17]
Inventor(s)01 / HENLEY, Francois, J.
24580 Skyland Road
Los Gatos, CA 95030 / US
02 / CHEUNG, Nathan, W.
1145 Stannage Avenue
Albany, CA 94706 / US
[2000/17]
Representative(s)Clark, Jane Anne, et al
Mathys & Squire The Shard
32 London Bridge Street
London SE1 9SG / GB
[N/P]
Former [2007/50]Clark, Jane Anne, et al
Mathys & Squire 120 Holborn
London EC1N 2SQ / GB
Former [2000/17]Kazi, Ilya, et al
Mathys & Squire, 100 Gray's Inn Road
London WC1X 8AL / GB
Application number, filing date98924756.411.05.1998
[2000/17]
WO1998US09567
Priority number, dateUS19970046276P12.05.1997         Original published format: US 46276 P
US1998002611519.02.1998         Original published format: US 26115
US1998002602719.02.1998         Original published format: US 26027
[2000/17]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO9852216
Date:19.11.1998
Language:EN
[1998/46]
Type: A1 Application with search report 
No.:EP0995227
Date:26.04.2000
Language:EN
The application published by WIPO in one of the EPO official languages on 19.11.1998 takes the place of the publication of the European patent application.
[2000/17]
Search report(s)International search report - published on:US19.11.1998
(Supplementary) European search report - dispatched on:EP18.05.2000
ClassificationIPC:H01L21/304, H01L21/20, H01L21/762, B26F3/00, B26D3/28, H01L21/425
[2000/27]
CPC:
B26D3/28 (EP); B26F3/00 (EP); B26F3/002 (EP);
H01L21/26506 (EP); H01L27/1203 (EP)
Former IPC [2000/17]H01L21/425
Designated contracting statesDE,   FR,   GB,   IE,   IT,   NL [2000/17]
TitleGerman:KONTROLLIERTES SPALTUNGSVERFAHREN[2000/17]
English:A CONTROLLED CLEAVAGE PROCESS[2000/17]
French:PROCEDE DE CLIVAGE CONTROLE[2000/17]
Entry into regional phase10.12.1999National basic fee paid 
10.12.1999Search fee paid 
10.12.1999Designation fee(s) paid 
10.12.1999Examination fee paid 
Examination procedure08.12.1998Request for preliminary examination filed
International Preliminary Examining Authority: US
10.12.1999Examination requested  [2000/17]
21.09.2007Despatch of a communication from the examining division (Time limit: M06)
31.03.2008Reply to a communication from the examining division
11.04.2013Despatch of a communication from the examining division (Time limit: M04)
21.08.2013Reply to a communication from the examining division
02.12.2014Application deemed to be withdrawn, date of legal effect  [2015/20]
09.01.2015Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2015/20]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  21.09.2007
Fees paidRenewal fee
10.12.1999Renewal fee patent year 03
20.04.2001Renewal fee patent year 04
21.05.2002Renewal fee patent year 05
26.05.2003Renewal fee patent year 06
04.06.2004Renewal fee patent year 07
19.05.2005Renewal fee patent year 08
30.05.2006Renewal fee patent year 09
30.05.2007Renewal fee patent year 10
08.02.2008Renewal fee patent year 11
26.05.2009Renewal fee patent year 12
27.05.2010Renewal fee patent year 13
31.05.2011Renewal fee patent year 14
29.05.2012Renewal fee patent year 15
29.05.2013Renewal fee patent year 16
Penalty fee
Additional fee for renewal fee
31.05.200407   M06   Fee paid on   04.06.2004
31.05.201417   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]US4466852  (BELTZ RICHARD K [US], et al) [A] 1,6,7,13,17-23 * column 1, line 6 - line 20 * * column 1, line 58 - column 2, line 33 * * column 3, line 6 - line 33 * * column 5, line 34 - column 6, line 59; figures 6-8 * * column 7, line 12 - line 27 * * column 8, line 27 - line 37 *;
 [YA]EP0397237  (PHILIPS NV [NL]) [Y] 8,9 * column 1, line 1 - line 9 * * column 3, line 47 - column 4, line 35; figures 1-4 * * column 5, line 5 - line 18; figure 6 * * column 5, line 28 - line 35 * [A] 1-7,13,17;
 [A]US5213451  (FRANK WALTER [DE], et al) [A] 1,6,7,13,17-23 * column 1, line 7 - line 12 * * column 2, line 13 - line 43 * * column 2, line 62 - column 3, line 43; figure 1 * * column 4, line 53 - column 5, line 46 *;
 [XY]EP0703609  (COMMISSARIAT ENERGIE ATOMIQUE [FR]) [X] 1-7,10-15,17,18 * column 1, line 5 - line 14 * * column 2, line 38 - column 3, line 24 * * column 3, line 46 - column 4, line 6 * * column 4, line 22 - line 30 * * column 5, line 6 - line 25 * * column 6, line 19 - line 23; figure 1 * * column 6, line 34 - line 56; figure 2 * * column 7, line 9 - line 43; figure 3 * [Y] 8,9;
 [PX]EP0793263  (CANON KK [JP]) [PX] 1-7,10-15,17 * column 1, line 7 - line 36 * * column 6, line 29 - column 7, line 23; figures 17-19 * * column 18, line 15 - column 19, line 36; figures 4-7 * * column 22, line 35 - column 23, line 6 * * column 30, line 50 - column 31, line 19 * * column 44, line 43 - column 45, line 6 *;
 [E]EP0843344  (CANON KK [JP]) [E] 1-7,10-15,17 * column 7, line 26 - column 8, line 27; figures 5A-5C * * column 8, line 36 - line 48 * * column 10, line 16 - line 43 * * column 12, line 10 - column 13, line 2 * * column 13, line 34 - column 14, line 24; figures 1A-1E *;
 [E]EP0867921  (CANON KK [JP]) [E] 1-7,10-15,17 * column 10, line 6 - column 11, line 16; figures 1A-1D * * column 12, line 48 - column 13, line 21 * * column 15, line 39 - column 16, line 13; figure 2D *;
 [A]  - LU X ET AL, "SOI MATERIAL TECHNOLOGY USING PLASMA IMMERSION ION IMPLANTATION", PROCEEDINGS OF THE ANNUAL SOS/SOI TECHNOLOGY CONFERENCE. (FROM 1991 PROCEEDINGS OF THE INTERNATIONAL SOI CONFERENCE.) SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES,US,NEW YORK, NY: IEEE, (1996), ISBN 0-7803-3316-0, pages 48 - 49, XP000736841 [A] 1-7,10-17 * the whole document *
International search[A]US4982090  (WITTMAACK KLAUS [DE]);
 [A]US5242861  (INABA TAKASHI [JP]);
 [A]US5269880  (JOLLY GURVINDER [CA], et al);
 [A]  - INSPEC, (19000101), Database accession no. 73:481970, XP002910169
by applicantEP0703609
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.