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Extract from the Register of European Patents

EP About this file: EP0949669

EP0949669 - Method of fabricating semiconductor device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  01.02.2008
Database last updated on 30.10.2024
Most recent event   Tooltip21.11.2008Change - lapse in a contracting state
Updated state(s): FR
published on 24.12.2008  [2008/52]
Applicant(s)For all designated states
Seiko Epson Corporation
4-1, Nishi-Shinjuku 2-chome
Shinjuku-ku
Tokyo 163-0811 / JP
[N/P]
Former [2007/13]For all designated states
SEIKO EPSON CORPORATION
4-1, Nishi-shinjuku 2-chome Shinjuku-ku
Tokyo 163-0811 / JP
Former [1999/41]For all designated states
SEIKO EPSON CORPORATION
4-1, Nishishinjuku 2-chome
Shinjuku-ku, Tokyo 163-0811 / JP
Inventor(s)01 / Kawahara, Kei
c/o Seiko Epson Corporation, 3-5, Owa 3-chome
Suwa-shi, Nagano-ken / JP
[1999/41]
Representative(s)MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB
Paul-Heyse-Straße 29
80336 München / DE
[N/P]
Former [1999/41]Hoffmann, Eckart, Dipl.-Ing.
Patentanwalt, Bahnhofstrasse 103
82166 Gräfelfing / DE
Application number, filing date99106823.006.04.1999
[1999/41]
Priority number, dateJP1998011148007.04.1998         Original published format: JP 11148098
[1999/41]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0949669
Date:13.10.1999
Language:EN
[1999/41]
Type: A3 Search report 
No.:EP0949669
Date:30.08.2000
[2000/35]
Type: B1 Patent specification 
No.:EP0949669
Date:28.03.2007
Language:EN
[2007/13]
Search report(s)(Supplementary) European search report - dispatched on:EP13.07.2000
ClassificationIPC:H01L21/60, H01L21/285, H01L21/28
[1999/41]
CPC:
H01L21/76843 (EP); H01L21/18 (KR); H01L21/28518 (EP);
H01L21/76856 (EP); H01L23/485 (EP); H01L29/6659 (EP);
H01L2924/0002 (EP) (-)
C-Set:
H01L2924/0002, H01L2924/00 (EP)
Designated contracting statesDE,   FI,   FR,   GB,   NL [2001/20]
Former [1999/41]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Herstellungsverfahren einer Halbleiteranordnung[1999/41]
English:Method of fabricating semiconductor device[1999/41]
French:Méthode de fabrication d'un dispositif semiconducteur[1999/41]
Examination procedure03.01.2001Examination requested  [2001/10]
19.10.2004Despatch of a communication from the examining division (Time limit: M04)
24.02.2005Reply to a communication from the examining division
14.11.2006Communication of intention to grant the patent
19.01.2007Fee for grant paid
19.01.2007Fee for publishing/printing paid
Opposition(s)02.01.2008No opposition filed within time limit [2008/10]
Fees paidRenewal fee
30.04.2001Renewal fee patent year 03
30.04.2002Renewal fee patent year 04
29.04.2003Renewal fee patent year 05
29.04.2004Renewal fee patent year 06
28.04.2005Renewal fee patent year 07
29.03.2006Renewal fee patent year 08
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Lapses during opposition  TooltipFI28.03.2007
FR28.03.2007
NL28.03.2007
DE01.11.2007
[2008/52]
Former [2008/24]FI28.03.2007
NL28.03.2007
DE01.11.2007
FR16.11.2007
Former [2008/16]FI28.03.2007
NL28.03.2007
DE01.11.2007
Documents cited:Search[A]JPH05166798  ;
 [A]US4512073  (HSU SHENG T [US]) [A] 1-9 * column 2, line 31 - column 3, line 31 * * figures 3,4 *;
 [A]US4888297  (ABOELFOTOH MOHAMED O [US], et al) [A] 1,4,5 * column 4, line 53 - column 5, line 32 * * column 6, line 21 - line 24 ** column 8, line 32 - column 9, line 16 *;
 [Y]US5144390  (MATLOUBIAN MISHEL [US]) [Y] 12 * column 7, line 59 - line 66 * * column 8, line 35 - line 39 *;
 [DXY]EP0607820  (NEC CORP [JP]) [DX] 1-11 * column 3, line 49 - column 6, line 6 * * claims 1-11 * * figures 1B,1C * [Y] 12
 [A]  - PATENT ABSTRACTS OF JAPAN, (19931014), vol. 017, no. 568, Database accession no. (E - 1447), & JP05166798 A 19930702 (SONY CORP) [A] 1-4 * abstract * * figure 1 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.