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Extract from the Register of European Patents

EP About this file: EP1001461

EP1001461 - Passivation method of a high-speed power diode by means of an amorphous carbon passivation layer [Right-click to bookmark this link]
Former [2000/20]High speed power diode having an amorphous carbon passivation layer and corresponding method
[2007/46]
StatusNo opposition filed within time limit
Status updated on  26.12.2008
Database last updated on 19.10.2024
Most recent event   Tooltip20.05.2011Lapse of the patent in a contracting state
New state(s): GR		published on 22.06.2011  [2011/25]
Applicant(s)For all designated states
SEMIKRON Elektronik GmbH & Co. KG
Sigmundstrasse 200
90431 Nürnberg / DE
[2005/34]
Former [2000/20]For all designated states
Semikron Elektronik GmbH
Postfach 82 02 51
D-90253 Nürnberg / DE
Inventor(s)01 / Lutz, Josef
Knauerstrasse 11
90443 Nürnberg / DE
02 / Lang, Manfred, Dr.
Am Hang 8
91126 Schwabach / DE
[2000/20]
Application number, filing date99120312.612.10.1999
[2000/20]
Priority number, dateDE199815146109.11.1998         Original published format: DE 19851461
[2000/20]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP1001461
Date:17.05.2000
Language:DE
[2000/20]
Type: B1 Patent specification 
No.:EP1001461
Date:20.02.2008
Language:DE
[2008/08]
Search report(s)(Supplementary) European search report - dispatched on:EP31.03.2000
ClassificationIPC:H01L23/29, H01L23/31, H01L21/314, H01L29/06
[2000/20]
CPC:
H01L21/02115 (EP,US); H01L21/02274 (EP,US); H01L23/291 (EP);
H01L23/3171 (EP); H01L29/408 (EP); H01L2924/0002 (EP);
H01L2924/13055 (EP) (-)
C-Set:
H01L2924/0002, H01L2924/00 (EP)
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE [2000/20]
TitleGerman:Verfahren zur Passivierung einer schnellen Leistungsdiode durch eine Passivierungsschicht aus amorphem Kohlenstoff[2007/46]
English:Passivation method of a high-speed power diode by means of an amorphous carbon passivation layer[2007/46]
French:Méthode de passivation d'une diode rapide de puissance par une couche de passivation en carbone amorphe[2007/46]
Former [2000/20]Schnelle Leistungsdiode mit einer Passivierungsschicht aus amorphem Kohlenstoff und entsprechendes Verfahren
Former [2000/20]High speed power diode having an amorphous carbon passivation layer and corresponding method
Former [2000/20]Diode rapide de puissance comprenant une couche de passivation en carbone amorphe et méthode de fabrication correspondante
Examination procedure29.05.2000Examination requested  [2000/30]
28.08.2003Despatch of a communication from the examining division (Time limit: M04)
10.12.2003Reply to a communication from the examining division
22.02.2007Despatch of a communication from the examining division (Time limit: M04)
21.06.2007Reply to a communication from the examining division
06.11.2007Communication of intention to grant the patent
16.11.2007Fee for grant paid
16.11.2007Fee for publishing/printing paid
Opposition(s)21.11.2008No opposition filed within time limit [2009/05]
Fees paidRenewal fee
07.08.2001Renewal fee patent year 03
12.08.2002Renewal fee patent year 04
14.08.2003Renewal fee patent year 05
07.09.2004Renewal fee patent year 06
30.08.2005Renewal fee patent year 07
14.09.2006Renewal fee patent year 08
10.09.2007Renewal fee patent year 09
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipCY20.02.2008
DK20.02.2008
FI20.02.2008
IE20.02.2008
IT20.02.2008
NL20.02.2008
SE20.05.2008
GR21.05.2008
ES31.05.2008
PT21.07.2008
AT12.10.2008
GB12.10.2008
LU12.10.2008
BE31.10.2008
CH31.10.2008
LI31.10.2008
MC31.10.2008
[2011/25]
Former [2010/28]CY20.02.2008
DK20.02.2008
FI20.02.2008
IE20.02.2008
IT20.02.2008
NL20.02.2008
SE20.05.2008
ES31.05.2008
PT21.07.2008
AT12.10.2008
GB12.10.2008
LU12.10.2008
BE31.10.2008
CH31.10.2008
LI31.10.2008
MC31.10.2008
Former [2010/19]CY20.02.2008
DK20.02.2008
FI20.02.2008
IE20.02.2008
IT20.02.2008
NL20.02.2008
SE20.05.2008
ES31.05.2008
PT21.07.2008
AT12.10.2008
GB12.10.2008
BE31.10.2008
CH31.10.2008
LI31.10.2008
MC31.10.2008
Former [2010/06]CY20.02.2008
DK20.02.2008
FI20.02.2008
IE20.02.2008
IT20.02.2008
NL20.02.2008
SE20.05.2008
ES31.05.2008
PT21.07.2008
GB12.10.2008
BE31.10.2008
CH31.10.2008
LI31.10.2008
MC31.10.2008
Former [2009/30]DK20.02.2008
FI20.02.2008
IE20.02.2008
NL20.02.2008
SE20.05.2008
ES31.05.2008
PT21.07.2008
MC31.10.2008
Former [2008/49]DK20.02.2008
FI20.02.2008
IE20.02.2008
NL20.02.2008
SE20.05.2008
ES31.05.2008
PT21.07.2008
Former [2008/48]DK20.02.2008
FI20.02.2008
IE20.02.2008
NL20.02.2008
SE20.05.2008
ES31.05.2008
Former [2008/46]DK20.02.2008
FI20.02.2008
SE20.05.2008
ES31.05.2008
Former [2008/39]FI20.02.2008
ES31.05.2008
Former [2008/35]ES31.05.2008
Documents cited:Search[A]EP0381111  (SIEMENS AG [DE]) [A] 6 * column 3, line 54 - column 4, line 36 *;
 [DYA]DE4310444  (SEMIKRON ELEKTRONIK GMBH [DE]) [DY] 1-5 * page 2, line 42 - page 4, line 28; figures 1-3 * [A] 8;
 [DYA]DE4410354  (SEMIKRON ELEKTRONIK GMBH [DE]) [DY] 1-5 * column 2, line 31 - column 3, line 63; figures 1-6 * [A] 6-8;
 [YA]  - BARTHELMESS R ET AL, "Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)", PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD '98) (IEEE CAT. NO.98CH36212), KYOTO, JP, Inst. Electr. Eng. Japan, Tokyo, JP,, (19980603), ISBN 0-7803-4752-8, pages 181 - 184, XP000801060 [Y] 1-5 * Absatz "Optimized High-Voltage GTO-Diodes (freewheeling diodes)"; Abbildung 4 * * Absatz "The Electroactive Passivation", Zeilen 1-17 * [A] 6-8

DOI:   http://dx.doi.org/10.1109/ISPSD.1998.702664
 [A]  - FRISCHHOLZ M ET AL, "OBIC MEASUREMENTS ON PLANAR HIGH VOLTAGE P+-N JUNCTIONS WITH DIAMOND-LIKE CARBON FILMS AS PASSIVATION LAYER", DIAMOND AND RELATED MATERIALS, ELSEVIER SEQUOIA SA, LAUSANNE, CH, (19930413), vol. 2, no. 5-7, ISSN 0925-9635, pages 778 - 781, XP000414262 [A] 1,6 * Absätze 2, 3.1; Abbildungen 1, 5 *

DOI:   http://dx.doi.org/10.1016/0925-9635(93)90222-N
 [A]  - MASSI M ET AL, "Effects of plasma etching on DLC films", 14TH INT VACUUM CONGRESS (IVC-14). 10TH INT CONF ON SOLID SURFACES (ICSS-10). 5TH INT CONF ON NANOMETRE-SCALE SCIENCE AND TECHNOLOGY (NANO-5). 10TH INT CONF ON QUANTITATIVE SURFACE ANALYSIS, BIRMINGHAM, GB, Thin Solid Films, April 1999, Elsevier, Lausanne, CH,, (19980831), vol. 343-344, ISSN 0040-6090, pages 381 - 384, XP002131416 [A] 6 * abstract *

DOI:   http://dx.doi.org/10.1016/S0040-6090(98)01691-5
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